2019
2018
2017
- Y. Afsar, T. Moy, N. Brady, S. Wagner, J.C. Sturm, and Naveen Verma, "Large-Scale Acquisition of Large-Area Sensors Using an Array of Frequency-Hopping ZnO Thin-Film-Transistor Oscillators," 2017 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, 2017, pp. 256-257
- L.E. Aygun, S. Wagner, N. Verma, and J.C. Sturm, "High-Frequency ZnO Schottky Diodes for Non-contact Inductive Power Transfer in Large-Area Electronics," 2017 75th Annual Device Research Conference (DRC), South Bend, IN, 2017
- A.H. Berg and J.C. Sturm, "Extracting Interface Recombination Velocities from Double-Heterojunction Solar Cell Reverse-Recovery Characteristics," 2017 75th Annual Device Research Conference (DRC), South Bend, IN, 2017
- Y. Mehlman, Y. Afsar, N. Verma, S. Wagner, and J.C. Sturm, "Self-Aligned ZnO Thin-Film Transistors with 860 MHz fT and 2 GHz fmax for Large-Area Applications," 2017 75th Annual Device Research Conference (DRC), South Bend, IN, 2017
- T. Moy, W. Rieutort-Louis, L. Huang, S. Wagner, J.C. Sturm, and Naveen Verma, "Information-processigng driven interfaces in hybrid large-area electronics systems," 2017 IEEE International Symposium on Circuits and Systems (ISCAS), Baltimore, MD, 2017
2016
- Alexander H. Berg, Girija S. Sahasrabudhe, Ross A. Kerner, Barry P. Rand, Jeffrey Schwartz, and James C. Sturm, "Electron-blocking NiO/Crystalline n-Si Heterojunction Formed by ALD at 175°C," 74th Annual Device Research Conference (June 19-22).
- Yasmin Afsar, Jenny Tang, Warren Rieutort-Louis, Liechao Huang, Yingzhe Hu, Josue Sanz-Robinson, Sigurd Wagner, Naveen Verma, and James C. Sturm, "Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems," SID Symp Digest, Vol.47(1), pp. 207-210 (May 22–27).
- Janam Jhaveri, Alexander H. Berg, Sigurd Wagner and James C. Sturm, "Al/TiO2/p-Si Heterojunction as an Ideal Minority Carrier Electron Injector for Silicon Photovoltaics," Proc. IEEE Photovoltaic Specialist Conf (PVSC), June 5-10, 2016, Portland, OR
- Warren Rieutort-Louis, Tiffany Moy, Zhuo Wang, Sigurd Wagner, James C. Sturm, and Naveen Verma, "A Large-Area Image Sensing and Detection System Based on Embedded Thin-Film Classifiers," IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 51, NO. 1, JANUARY 2016
- Josue Sanz-Robinson, Liechao Huang, Tiffany Moy, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, "ROBUST BLIND SOURCE SEPARATION IN A REVERBERANT ROOM BASED ON BEAMFORMING WITH A LARGE-APERTURE MICROPHONE ARRAY," 2016 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP), Shanghai, 2016, pp. 440-444.
2015
- L. Huang, J. Sanz-Robinson, T. Moy, Y. Hu, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "Reconstruction of Multiple-user Voice Commands Using a Hybrid System Based on Thin-film Electronics and CMOS", VLSI Symp. on Circuits, pp. C196-197, DOI: 10.1109/VLSIT.2015.7223650 (2015).
- T. Moy, W. Rieutort-Louis, J.C. Sturm, S. Wagner, and N. Verma, "TFT-based Calibration Circuit for Thin-film Photoconductors", Int'l Thin-Film Transistor Conf. (ITC), (FEB 2015).
- W. Rieutort-Louis, R. Shidachi, Y. Afsar, J.C. Sturm, N. Verma, T. Someya, and S. Wagner, "Representative Flicker Noise Measurements for Low-temperature Amorphous Silicon, Organic, and Zinc Oxide Thin-film Transistors", Int'l Thin-Film Transistor Conf. (ITC) (FEB 2015).
- W. Rieutort-Louis, T. Moy, Z. Wang, S. Wagner, J.C. Sturm, and N. Verma, "A Large-area Image and Sensing and Detection System Based on Embedded Thin-film Classifiers", Int'l Solid-State Circuits Conf. (ISSCC), pp. 292-293 (FEB 2015).
- Sigurd Wagner, Josue Sanz-Robinson, Warren Rieutort-Louis, Liechao Huang, Tiffany Moy, Yingzhe Hu, Yasmin Afsar, James C. Sturm, and Naveen Verma, "Investigating the Architecture of Flexible Large-Area Hybrid Systems," Information Display Vol. 31(4).
- Janam Jhaveri, Ken A. Nagamatsu, Alexander H. Berg, Gabriel Man, Girija Sahasrabudhe, Sigurd Wagner, Jeffrey Schwartz, Antoine Kahn, and James C. Sturm, "Double-Heterojunction Crystalline Silicon Solar Cell with Electron-Selective TiO2 Cathode Contact Fabricated at 100oC with Open-Circuit Voltage of 640 mV," Proc. IEEE 42nd Photovoltaic Spec. Conf. (June 14-19).
2014
- B. Visweswaran, S. Mohan, P. Mandlik, J. Silvernail, R. Ma, J. Sturm, S. Wagner, "Predicting the Lifetime of Flexible Permeation Barrier Layers for OLED Displays", SID Digest 10.3 San Francisco (JUN 2014).
- L. Huang, W. Rieutort-Louis, A. Gualdino, L. Teagno, Y. Hu, J. Mouro, J. Sanz-Robinson, J.C. Sturm, S. Wagner, V. Chu, J. Conde, and N. Verma, "An ASIC for Readout of Post-processed Thin-film MEMS Resonators by Employing Capacitive Interfacing and Active Parasitic Cancellation", VLSI Symp. on Circuits (VLSI) (JUN2014).
- S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, J.C. Sturm, "Double-Heterojunction Crystalline Silicon Solar Cell Fabricated at 250 C with 12.9% Efficiency," 2014 PVSC, IEEE 40th, DOI: 10.1109/PVSC.2014.6925069 (JUN 2014).
- T. Moy, W. Rieutort-Louis, Y. Hu, L. Huang, J. Sanz-Robinson, J.C. Sturm, S. Wagner, and N. Verma, "Thin-film Circuits for Scalable Interfacing Between Large-area Electronics and CMOS ICs", Device Research Conference (DRC), (2014).
- W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J.C. Sturm, N. Verma, and S. Wagner, "Current Cain of Amorphous Silicon Thin-Film Transistors Above the Cutoff Frequency", Device Research Conference (DRC) (2014)
- Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, S. Wagner, J.C. Sturm, and N. Verma, "3D Gesture-Sensing System for Interactive Displays Based on Extended-Range Capacitive Sensing", ISSCC, Session 12.2, pp. 212-213 (FEB 2014).
- Y. Hu, T. Moy, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "3D Multi-Gesture Sensing System for Large Areas based on Pixel Self-Capacitance Readout using TFT Scanning and Frequency-Conversion Circuits", IEEE CICC M-11, (SEPT 2014).
- Janam Jhaveri, Sushobhan Avasthi, Ken Nagamatsul, and James C. Sturm, "Stable Low-Recombination n-Si/Ti02 Hole-blocking Interface and Its Effect on Silicon Heterojunction Photovoltaics," Proc. IEEE 40th Photovoltaic Spec. Conf. (June 8-13).
2013
- C.-T. Huang, J.-Y. Li, J.C. Sturm, "Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two-Dimensional Electron Gases with Thin SiGe Cap Layers", ECS Transactions 53 (1) pp. 45-50 (2013).
- J. Jhaveri, S. Avasthi, G. Man, W. McClain, K. Nagamatsu, J. Schwartz, A. Kahn, J.C. Sturm, "Hole-blocking Crystalline Silicon/Titanium-Oxide Heterojunction with Very Low Interface Recombination Velocity", Proc. IEEE Photovoltaic Spec. Conf. (PVSC), Paper 912, Tampa, FL (JUN 2013).
- J. Sanz Robinson, W. Rieutort-Louis, Y. Hu, L. Huang, N. Verma, S. Wagner, and J.C. Sturm, "High Current Density, Hybrid Nanocrystalline/Amorphous Silicon Schottky Diodes", Int'l Conf. on Amorphous and Nano-crystalline Semiconductors (ICANS) (AUG 2013).
- J. Sanz Robinson, Y. Hu, W. Rieutort-Louis, L. Huang, N. Verma, S. Wagner, and J.C. Sturm, "Hybrid Nanocrystalline/Amorphous-silicon Schottky Diodes for Large-area Electronic Systems", Materials Research Society Meeting (MRS) (APR 2013).
- J.C. Sturm, S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, "Wide Bandgap Heterojunctions on Crystalline Silicon", ECS Trans. 58, pp. 97-105 (2013)
- K. Nagamatsu, S. Avasthi, J. Jhaveri, J.C. Sturm, "A 12% Efficient Silicon/PEDOT: PPS Heterojunction Solar Cell Fabricated at < 100 C", Proc. IEEE Photovoltaic Spec. Conf. (PVSC), Paper 908, Tampa, FL (JUN 2013).
- L. Huang, W. Rieutort-Louis, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "A Super-regenerative Radio on Plastic Based on Thin-film Transistors and Antennas on Large Flexible Sheets for Distributed Communication Links", Proc. IEEE Int'l Solid-State Circuits Conf. (ISSCC), pp. 458-459, (FEB 2013).
- W. Rieutort-Louis, J. Sanz Robinson, Y. Hu, L. Huang, J.C. Sturm, N. Verma, S. Wagner, "Readout from Amorphous Silicon Thin-film Transistor-based Strain Sensing Sheets over Non-contact Interfaces using a TFT Gilbert-Type Modulator", Int'l Conf. on Amorphous and Nano-crystalline Semiconductors (ICANS) (AUG 2013).
- W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz Robinson, S. Wagner, J. C. Sturm, and N. Verma, "A Complete Fully Thin-film PV Harvesting and Power-management System on Plastic with On-sheet Battery Management and Wireles Power Delivery to Off-sheet Loads", IEEE Photovoltaic Spec. Conf. (PVSC), Paper 68, Tampa, Fl (JUN 2013).
- W. Rieutort-Louis, Y. Hu, L. Huang, J. Sanz Robinson, S. Wagner, N. Verma, and J.C. Sturm, "Effect of Low-Temperature TFT Processing on Power Delivery from Thin-Film Power Electronics on Flexible Substrates", Materials Research Society Meeting (MRS) (APR 2013).
- Y. Hu, L. Huang, J. Sanz-Robinson, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "A Fully Self-powered Hybrid System based on CMOS ICs and Large-area Electronics for Large-scale Strain Monitoring", Proc. IEEE Symp. VLSI Circuits (VLSIC), (JUN 2013).
- Y. Hu, L. Huang, J. Sanz-Robinson, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "Energy Harvesting and Power-management for Sensing Skins in SHM Applications", Proc. The 9th Int'l Workshop on Structural Health Monitoring (IWSHM), pp. 2771-2778 (SEPT 2013).
2012
- W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "A figure of merit for oscillator-based thin-film circuits on plastic for high-performance signaling, energy harvesting and driving of actuation circuits, Device Research Conference (DRC), 10.1109/DRC.2012.6256980 pp. 117-118 University Park, PA JUN (2012).
- T. Liu, S. Wagner, J.C. Sturm, "Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field", Device Research Conference (DRC), 10.1109/DRC.2012.6257025 pp. 245-246 University Park, PA JUN (2012).
- S. Avasthi, W. McClain, J. Schwartz, J.C. Sturm, "Hole-blocking Ti02/silicon heterojunction for silicon photovoltaics", Device Research Conference (DRC), 10.1109/DRC.2012.6256955 pp. 93-94 University Park, PA JUN (2012).
- J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, J.C. Sturm, "Frequency dependence of amorphous silicon Schottky diodes for Large-Area rectification applications", Device Research Conference (DRC), 10.1109/DRC.2012.6257001 pp. 135-136 University Park, PA JUN (2012).
- L. Huang, W. Rieutort-Louis, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Integrated all-silicon thin-film power electronics on flexible sheets for ubiquitous wireless charging stations based on solar-energy harvesting", VLSI Circuits Symposium, 10.1109/VLSI.2012.6243858, pp. 198-199 Honolulu, HI JUN (2012).
- Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, K. Song, J.C. Sturm, S. Wagner, N. Verma, "High-resolution sensing sheet for structural-health monitoring via scalable interfacing of flexible electronics with high-performance ICs", VLSI Circuits Symposium, 10.1109/VLSI.2012.6243819, pp. 120-121 Honolulu, HI JUN (2012).
- C.-T. Huang, J.-Y. Li, J.C. Sturm, "High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222514 pp. 1-2 Berkeley, CA JUN (2012).
- J.-Y. Li, C.-T. Huang, J.C. Sturm, "Extremely Sharp Phosphorus Turn-off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVD", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222436 pp. 1-2 Berkeley, CA JUN (2012).
- Y. Hu, W. Rieutort-Louis, L. Huang, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Flexible solar-energy harvesting system on plastic with thin-film LC oscillators operating above ft for inductively-coupled power delivery", Custom Integrated Circuits Conference (CICC), 10.1109/CICC.2012.6330627 pp. 1-4 San Jose, CA SEPT (2012).
- T. Liu and J.C. Sturm, "3-TFT OLED Pixel Cicruit for High Stability with In-pixel Current Source", SID Symposium Digest of Technical Papers, 43, pp.1101-1103, doi: 10.1002/j.2168-0159.2012.tb05984.x (2012).
- J.-Y. Li, C.-T. Huang and J.C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating”, Abstracts of ECS Electrochemical Energy Summit PRiME, Honolulu, HI, OCT (2012), vol 2012-02, paper 2695, ISSN 2151-2041 (print), 2151-2043 (on-line).
- W. Rieutort-Louis, J. Sanz-Robinson, J.C. Sturm, S. Wagner, and N. Verma, "Thin-film Transistors and Circuit-design Styles for Scalable Control and Access Functionality over Sensor Arrays on Plastic", MRS Meeting (APR 2012).
- J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J.C. Sturm, "A Full-wave Bridge Rectifier Based on Thin-film Amorphous-silicon Schottky Diodes for Wireless Power and Signal Transfer in Systems-on-plastic", MRS Meeting (APR 2012).
- W. Rieutort-Louis, J. Sanz-Robinson, Y. Hu, L. Huang, J.C. Sturm, N. Verma, and S. Wagner, "Device Optimization for Integration of Thin-Film Power Electronics with Thin-film Energy-harvesting Devices to Create Power-delivery Systems on Plastic Sheets", Int. Electron Device Meeting (IEDM) (DEC 2012).
All the links below lead to PDF versions of the documents.
2011
- J.C. Sturm, Y. Huang, L. Han, T. Liu, B. Hekmatshoar, K. Cherenack, E. Lausecker, and S. Wagner, "Amorphous Silicon: The Other Silicon," Ultimate Integration on Silicon (ULIS) 2011, Cork, Ireland MARCH (2011)
- I. Chan, R. Cheng, H-C. Cheng, C-C. Lee, T. Liu, B. Hekmatshoar, Y. Huang, S. Wagner, and J.C. Sturm, "Amorphous Silicon Thin-Film Transistors with Low-Stress Silicon Nitride for Flexible Display," MRS 2011 Spring Proceedings, San Francisco, APRIL (2011)
- T. Liu, S. Wagner and J.C. Sturm, "A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests," Tech. Proc. of IEEE International Reliability Physics Symp., pp. 2E.3.1 - 2.23.5 (2011)
2010
- S. Avasthi, G. Vertelov, J. Schwartz, J.C. Sturm, "Reduction of Minority Carrier Recombination at Silicon Surfaces and Contacts Using Organic Heterojunctions," 34th IEEE PVSC Conference 2009 Philadelphia FEB (2010)
- Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh," pp. 179-180, IEEE/DRC Technical Digest, JUNE (2010)
- Sigurd Wagner, Lin Han, Bahman Hekmatshoar, Katherine Song, Prashant Mandlik, Kunigunde H. Cherenack, and James C. Sturm, "Amorphous Silicon TFT Technology for Rollable OLED Displays," pp. 917 - 920, SID 10 DIGEST(2010)
2009
- Conference on Advances in Microfluidics and Nanofluidics Hong Kong, JAN (2009)
- Flex Tech Alliance, Phoenix, AZ FEB (2009)
- J.C. Sturm, B. Hekmatshoar, K. Cherenack, S. Wagner, "Enabling Mechanisms for a-Si TFT's with 100-year Lifetimes Compatible with Clear Plastic Substrates," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ècole Polytechnique, Massy-Palaiseau, France MARCH (2009)
- Y. Huang, S. Wagner, J.C. Sturm, "Transient phenomena in top-gate amorphous silicon thin film transistor with low-terperature self-aligned silicide source/drain and high mobility," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009)
- K. H. Cherenack, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Self-alignment techniques for fabricating a-Si TFTs at 300 oC on clear plastic," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009)
- H. Jin and J. C. Sturm, "Super-High Resolution Transfer Printing for Full-Color OLED Display Patterning," SID 09 Digest, pp. 597-599, JUNE (2009)
- J.C. Sturm, B. Hekmatshoar, K. Cherenack and S. Wagner, "Amorphous Silicon TFT's with 100-year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs," SID 09 Digest, pp. 979-982, JUNE (2009)t, pp. 597-599, JUNE (2009)
- Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Amorphous silicon floating-gate thin film transistor," pp. 135-136, IEEE/DRC Technical Digest, JUNE (2009)
- J-Y. Li and J.C. Sturm, "Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD," IEEE/DRC Technical Digest JUNE (2009)
2008
- K.H. Cherenack, A.X. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, "Self-Aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2V-1s-1 fabricated at 300 oC on Clear Plastic Substrates, MRS Proc. Vol. 1066, San Francisco, March 2008
- International SiGe Technology and Device Meeting, Hinschu, Taiwan, MAY 2008
- B. Hekmatshoar, K. Cherenack, K. Long, A. Kattamis, S. Wagner, J.C. Sturm, "AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme," 66th Annual Device Research Conference (DRC 2008) Digest, pp. 243-244, June 2008
- J.C. Sturm, K.H. Chung, "Chemical Vapor Deposition Epitaxy of Silicon-based Materials Using Neopentasilane," Electrochemical Society Meeting, ECS Transactions, Vol. 16, Honolulu, HI, October (2008)
- J. C. Sturm, B, Hekmatshoar, K. Cherenack, S. Wagner, "The Quest for the TFT Fountain of Youth," MRS Proc. Symposium G, 1114E, December (2008)
- B. Hekmatshoar, K. Cherenack, S. Wagner and J. C. Sturm, “Amorphous Silicon Thin-Film Transistors with DC Saturation Current Half-Life of More than 100 Years”, Technical Digest - 2008 IEEE International Electron Devices Meeting (IEDM 2008) , pp. 89-92, December (2008)
- Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-Film Transistors with Self-Aligned Silicide Source and Drain," pp. 241-242 IEEE/DRC JUNE (2008)
2007
- J.C. Sturm, "Stable Flexible TFT Backplanes on Clear Plastic," USDC Flexible Display and Microelectronics Conference, Phoenix, AZ, Feb. 2007
- J.C. Sturm, K. Chung, E. Sanchez, S. Kuppuroa, "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007.
- K. Chung and J. Sturm, "Chlorine for in-situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007.
- B. Hekmatshoar, A. Z. Kattamis, K. Cherenack, S. Wagner and J. C. Sturm, "Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current," Device Research Conference, Chicago, IL, May 2007.
- B. Hekmatshoar, K. Long*, S. Wagner, and J.C. Sturm, "Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors, Device Research Conference, Chicago, IL, May 2007. *Present address: Flexible Display Center, Arizona State University, Tempe, AZ 85284
- J.C. Sturm, B. Hekmatshoar, K. Cherenack, A. Kattamis, and S. Wagner, "Active-Matrix OLED's with High-Lifetime Amorphous Silicon Transistors on Clear Plastic Substrates," MRS Proc. Vol. 1030E, November 2007
2006
- I-Chun Cheng, Ke Long, Alex Kattamis, Helena Gleskova, James C. Sturm, and Sigurd Wagner, "Self-aligned amorphous-silicon thin-film transistors on clear plastic," presented at USDC 5th Annual Flexible Display & Microelectronics Conference, P6, Phoenix, AZ, USA, Feb 2006.
- Kuni Cherenack, I-Chun Cheng, Alex Kattamis, Ke Long, Sigurd Wagner, and James C. Sturm, "Optimization of SiNx barrier layers deposited at 250°C on a clear plastic substrate," presented at Mat. Res. Soc. Symp., L1.5, San Francisco, CA, USA, Apr 2006.
- Ke Long, I-Chun Cheng, Alex Kattamis, Helena Gleskova, Sigurd Wagner, and James C. Sturm, "Mechanical design of a-Si TFT's fabrication on high-temperature clear plastic substrate," presented at Mat. Res. Soc. Symp., A18.4, San Francisco, CA, USA, Apr 2006.
- Kun Yao, James Sturm, and Anthony Lochtefeld, "Strained Silicon Two-dimensional Electron Gases On Commercially Available Si1-xGex Relaxed Graded Buffers," in SiGe and Ge: Materials, Processing, and Devices, ECS Transactions, Volume 3 Issue No. 7, pp. 313-315 (2006).
- R. L. Peterson and J. C. Sturm, “Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 254-255 (2006).
- W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker and J.T. Mayer, Conf. Digest of Third International Silicon-Germanium Technology and Device Meeting, “The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications” pp. S188-S190 (2006)
- K. Chung, J.C. Sturm, E. Sanchez, S. Kuppuroa, “High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 180-181 (2006).
- Kun Yao and James C Sturm, “Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer,” in Nanomanufacturing, Mater. Res. Soc. Symp. Proc. 921E, 0921-T02-08 (2006).
- Olgica Bakajin, Eric Fountain, Keith Morton, Stephen Y. Chou, James C. Sturm, “Materials aspects in micro- and nanofluidic systems applied to biology,” Materials Research Society Bulletin, 31, pp. 108-113 (2006)
- D. Inglis, R. Riehn, J.C. Sturm, and R.H. Austin, "Microfluidic high gradient magnetic cell separation," J. Appl. Phys. 99, Art. No. 08K101 (2006)
- J.C. Sturm, K. Chung, E. Sanchez, S. Kuppuroa, "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007.
2005
- K. Long, I.-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, “Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures”, Tech. Dig. 63rd Device Research Conf. pp. 141-142 (2005).
- H. Jin and J.C. Sturm, "Large-area wet micro-printing (LAMP) for organic device patterning," Mater. Res. Soc. Symp. Proc., vol. 871, pp. I6.27.1-I6.27.6 (2005)
- Troy Graves-Abe and J. C. Sturm, "Programmable conductance switching and negative differential resistance in nanoscale organic films" Mat. Res. Soc. Symp. Proc., vol. 871, pp. I9.34.1 - I9.34.6 (2005).
- K. Long, A. Kattamis, I.-C. Cheng, Y. C. Gao, H. Gleskova, S. Wagner, J. C. Sturm, “High temperature (250oC) amorphous-silicon TFT’s on clear plastic substrates”, SID’05 Tech. Dig., vol 36, pp. 313-315 (2005).
- S. Wagner, I-C. Cheng, K. Long, A. Kattamis and J.C. Sturm "Managing mechanical stress in flexible active-matrix backplanes," Proc. Internat. Display Manufacturing Conference 2005, Taipei, Taiwan, Feb.21-24, 2005, pp. 415-418. Society for Information Display, Taipei Chapter, 1001 T-Hsueh Rd., Hsin Chu, Taiwan.
- Sigurd Wagner, Rabin Bhattacharya, I-Chun Cheng, Helena Gleskova, Joyelle Jones, Alex Kattamis, Stéphanie P. Lacour, Ke Long, James C. Sturm and Candice Tsay, Princeton University, Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Teng Li and Zhigang Suo Division of Engineering and Applied Sciences, Harvard University, April, 2005, Invited talk, Symp. Material Research Society, San Francisco, CA, Flexible, Conformal, and Elastic Electronic Surfaces.
- I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "Stress compensation for overlay registration in the fabrication of a-Si:H TFTs on organic polymer foil substrates," presented at USDC 4th Annual Flexible Display & Microelectronics Conference, 10.4, Phoenix, AZ, USA, Feb 2005.
- S. Wagner, R. Bhattacharya, I-C. Cheng, H. Gleskova, J. Jones, A. Kattamis, S. P. Lacour, K. Long, J. C. Sturm, C. Tsay, T. Li, and Z. Suo, "Flexible, conformal, and elastic electronic surfaces," presented at Mat. Res. Soc. Symp., H2.1, San Francisco, CA, USA, March 2005.
- A. Kattamis, I-C. Cheng, K. Long, J.C. Sturm, and S. Wagner, "Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates," Mat. Res. Soc. Symp. Proc., vol. 870, pp. H2.7,1 - H2.7.5 (2005)
- I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "SiNx stress control for overlay registration in a-Si:H TFTs on flexible foil substrates," presented at Mat. Res. Soc. Symp., A17.2, San Francisco, CA, USA, March 2005.
- A. Kattamis, I-C. Cheng, K. Long, J. C. Sturm, and S. Wagner, "Dimensionally stable processing of a-Si TFTs on polymer foils," presented at 47th Annual TMS Electronic Materials Conference, Santa Barbara, CA, X8, 2005.
- K. Long, I-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures," Dig. 63rd Device Research Conf., pp. 141-142, 2005.
- Alex Kattamis, Russell J. Holmes, I-Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, and Sigurd Wagner, "TFTs of nanocrystalline silicon fabricated on clear polymer foils for flexible AMOLED displays," presented at 21st International Conference on Amorphous and Nanocrystaline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.
- I-Chun Cheng, Ke Long, Alex Kattamis, James C. Sturm, and Sigurd Wagner, "Self-aligned a-Si:H thin-film transistors on clear plastic substrates," presented at 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.
2004
- H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, and S. Wagner, “Field-effect mobility of amorphous silicon thin film transistors under strain,” Journal of Non-Crystalline Solids 340, pp. 732-735 (2004).
- R.L. Peterson, H. Yin, and J.C. Sturm, "Island scaling effects on photoluminescence of strained SiGe/Si (100)," Mat. Res. Soc. Proc. Symp. vol 809, pp. B8.4.1-B8.4.6 (2004).
- M.S. Carroll and J.C. Sturm, “Boron diffusion and silicon self-interstitital recycling between SiGeC layers,” Mat. Res. Soc. Proc. Symp. vol 810, pp. C3.5.1-C3.5.6 (2004).
- H. Yin, K.D. Hobart, S.R. Shieh, R. L. Peterson, T.S. Duffy, and J.C. Sturm, "Interference-enhanced raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator," Mat. Res. Soc. Proc. Symp, vol. 809, pp. B3.6.1-B3.6.6 (2004).
- J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "Strain engineering in SiGe/Si-on-insulator structures using compliant substrate and stress balance approaches," 2nd International SiGe Technology and Device Meeting (ISTDM), pp. 29-30 (2004).
- K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, “Short-channel amorphous-silicon TFT’s on high-temperature clear plastic substrates,” Tech. Dig. Device Research Conf., pp. 89-90 (2004).
- R.L. Peterson, H. Yin, K.D. Hobart, T.S. Duffy, and J.C. Sturm, "Uniaxially-tensile strained ultra-thin silicon-on-insulator with up to 1.1% strain," Tech. Prog. 2004 Electronic Materials Conference, pp. 33-34 (2004).
- R.L. Peterson, K.D. Hobart, H. Yin and J.C. Sturm, "Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI," Proc. IEEE SOI Conference, pp. 39-41 (2004).
- J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "High-perfection approaches to Si-based devices through strained layer epitaxy," Proc. International Conference on Solid State Devices and Materials (SSDM), pp. 220-221 (2004).
- J.C. Sturm, S.P. Lacour, K.Long, P.I. Hsu, R. Bhattacharya, J. Jones, H. Gleskova, and S. Wagner, "Flexible and deformable electronic surfaces," Prog. Workshop on Frontiers in Electronics, p. 23 (2004).
2003
- X.-Z. Bo, L. P. Rokhinson, J. C. Sturm, "Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation," Proc. Symp. Mater. Res. Soc. vol. 737, pp. E14.5.1 - E,14,4,6 (2003)
- M. Wu, J.C. Sturm and S. Wagner, "Polycrystalline silicon thin film transistors for CMOS on flexible steel foil substrates, in Polycrystalline Semiconductors VII," Solid State Phenomena vol. 93, pp. 3-12 (2003)
- H. Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Relaxed SiGe layers with high Ge content by compliant substrates approaches," Proc. Symp. Mat. Res. Soc. vol. 768, pp. 15-19 (2003). (Also published in vol. 765)
- X.-Z. Bo, L.P. Rokhinson, and J. C. Sturm, "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Heterostructures III, pp. 129-130 (2003)
- H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Strained-Si-on-Insulator MOSFETs without relaxed SiGe buffer layer," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Hetereostructures, pp. 181-183 (2003)
- X.-Z. Bo, L. P. Rokhinson, D. C. Tsui, and J. C. Sturm, "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth," Tech. Dig. Device Research Conference, pp.129-130 (2003)
- H. Yin, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Stress balance of Si/SiGe and SiO2/SiGe islands on compliant substrates," Tech. Prog. Elec. Mater. Conf., pp. 38-39 (2003)
- L.R. Huang, J.C. Sturm, R.H. Austin, and E.C. Cox, "Enhanced Brownian ratchet array for DNA separation using flow angle effect, Proc. of \(\mu\)TAS 2003 (7th Inter. Conf. on Micro Total Analysis Systems), pp. 1187-1190 (2003)
- H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Fully-depleted strained-Si MOSFETs on insulator without SiGe buffers," Tech. Dig. International Electron Device Meeting (IEDM), pp. 53-56 (2003)
- (Plenary talk) J.C. Sturm, L.R. Huang, J.O. Tegenfeldt, H. Cao, S.Y. Chou, E.C. Cox, and R.H. Austin, "Nanofluidic devices for genomic analysis," Proc. 12th Internat. Workshop on the Physics of Semiconductor Devices (IWPSD-2003), K.N. Bhat and A. DasGupta, editors, Vol. 1, pp.51-56 (2003)
- E.J Stewart and J.C. Sturm, "Segregation of boron to polycrystalline and single-crystal Si1-xGex-yGexCy and Si1-yCy Layers," Proc. First International SiGe Technology and Device Meeting, pp. 169-170, (2003)
- K.R. Sarma, et al, K. Long, H. Gleskova, S. Wagner, J. C. Sturm, "Active matrix OLED using 150 oC a-Si TFT backplane built on flexible plastic substrate," SPIE Proc. Vol. 5080, pp. 180-191 (2003)
2002
- X.Z. Bo, N. Yao, J.C. Sturm, "Large-grain polysilicon films with low intragranular defect density by low-temperature solid-phase crystallization," Mat. Res. Soc. Symp. Proc. 715, pp. A16.4.1 - A16.4.6 (2002).
- M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, and M. Berti, "Thermal stability and substitutional carbon incorporation far above solid-solubility in Si1-xCx and Si1-x-yGexCy layers grown by chemical vapor deposition using disilane," Mat. Res. Soc. Symp. Proc. 717, pp. C4.3.1 - C4.3.7 (2002).
- T. Graves-Abe, F. Pschentizka, J.C. Sturm. "Anomalous temperature dependence in solvent-enhanced dye diffusion in polymer films," Mat. Res. Soc. Symp. Proc., Vol. 725, P3.1.1 (2002).
- P.I. Hsu, H. Gleskova, R. Bhattacharya, Z. Xi, Z. Suo, S. Wagner, J.C. Sturm, "Thin film transistors on 3-D Shapes: electrical performance under mechanical strain," Mat. Res. Soc. Symp. G Materials for Flexible Elect. Disp. And Dev. (2002).ABSTRACT MISSING
- P.I. Hsu, H. Gleskova,M. Huang, Z. Suo, S. Wagner, J.C. Sturm, "Amorphous Si TFTs on plastically deformed spherical domes," J. Non-crystalline Solids, vol. 299-302, pp. 1355-1359 (2002)
- H. Yin, R. Huang, K.D. Hobart., Z. Suo, S.R. Shieh, T. Duffy, and J.C. Sturm, "Prevention of buckling during SiGe relaxation on compliant substrates," Mat. Res. Soc. Symp. Proc. Spring (2002). ABSTRACT/PAPER MISSING
- H. Yin, K.D. Hobart, R. Huang, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, and J.C. Sturm. "High Ge-content relaxed Si1-xGex layers by relaxation on compliant substrate with controlled oxidation," Tech. Prog. Elec. Materials Conf., p. 8 (2002).
- L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin and E. Cox, "A microfabricated device for separating ~200 kilo-base-pair DNA molecules in ~ 15 seconds," MicroTAS pp. 51-53 (2002).
- L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin, and E.C. Cox, "A DNA Prism: Physical principles for optimizing a microfabricated DNA separation device, Tech. Dig. International Electron Device Meeting (IEDM), pp. 211-214 (2002)
- J.C. Sturm, H. Gleskova, T.N. Jackson, S.J. Fonash, and S. Wagner, "Enabling technologies for plastic displays," Proc. SPIE 4712, pp. 222-236 (2002).
2001
- H. Yin, J.C. Sturm, Z. Suo, R. Huang, K.D. Hobart, "Relaxation dynamics and electrical properties on SiGe islands on BPSG," Inter. Conf. on Alternative Substrate Technology, Lake Tahoe, CA, Jan. (2001).
- (Invited) J.C. Sturm, M.S. Carroll, M. Yang, E. Stewart, and J. Gray, "Point defect engineering for dopant dontrol in silicon-based nanodevices," Tech. Dig. New Group IV Semiconductors: Control of Properties and Applications to Ultrahigh speed and Optoelectronic Devices, pp. III-02-1 - III-02-4 (2001).
- E. Stewart, M. Carroll, and J.C. Sturm, "Threshold voltage stability of p-channel MOSFETs with heavily boron doped SiGeC gate layers," Proc. Electrochem. Soc. 2001-2, pp. 190-195 (2001).
- (Invited) J.C. Sturm, P.I. Hsu, M. Huang, H. Gleskova, S. Miller, A. Darhuber, S. Wagner, Z. Suo, and S. Troian, "Technologies for Large-Area Electronics on Deformable Substrates," Proc. Electrochemical Soc. 2001-2, pp. 506-517 (2001).
- M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Silicon interstitial driven loss of substitutional carbon from SiGeC structures," Mat. Res. Soc. Symp. Proc. 669, pp. J6.7.1-J6.7.6 (2001).
- D. De Salvador, E. Napolitani, A. Coati, M. Berti, A.V. Drigo, M. Carroll, J.C. Sturm, J. Stangl, G. Bauer, and L. Lazzarini, "Carbon diffusion and clustering in SiGeC layers under thermal oxidation," Mat. Res. Soc. Symp. Proc. 669, pp. J6.8.1-J6.8.6 (2001)
- E.J. Stewart, M.S. Carroll, and J.C. Sturm, "Boron segregation and electrical properties in polycrystalline SiGeC," Mat. Res. Soc. Symp. Proc. 669, pp. J6.9.1-J6.9.6 (2001).
- K. Long, M.H. Lu, F. Pschenitzka, and J.C. Sturm "Novel three-color polymer light-emitting devices for passive-matrix flat panel displays," Dig. 59th Device Research Conf. pp. 179-180 (2001).
- H. Yin, J.C. Sturm, Z. Suo, R. Huang, and K.D. Hobart, "Modeling of in-plane expansion and buckling of SiGe islands on BPSG," Tech. Prog. Elect. Mat. Conf. pp. 33, (2001).
- J.E. Gray, M. Yang, H. Yin, J.C. Sturm, "Growth and stabilization of sub-100-nm vertical n-channel MOSFET's," Tech. Prog. Elect. Mat. Conf. pp. 39 (2001).
- P.I. Hsu, H. Gleskova, Z. Suo, S. Wagner, and J.C. Sturm, "Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes," Tech. Dig. Device Research Conf, pp. 193-194 (2001)
- F. Pschenitzka, M.H. Lu, and J.C. Sturm, "Patterning of OLED cathodes by metal dry etching," Dig. Tech. Papers Int. Symp. Soc. Inf. Disp. pp. 731-734 (2001).
- (Invited) M.H. Lu and J.C. Sturm, "External coupling and cathode effects in organic light-emitting devices: modeling and experiments," Proc. SPIE vol. 4464, pp. 187--196 (2001).
- R. Huang, Z. Suo, H. Yin, and J. Sturm, "Relaxation of a strained elastic film on a viscous layer," Mat. Res. Soc. Symp. Proc. 695, pp. L3.14.1 - L3.14.6 (2001).
- (Invited) Y. Vlasov, X. Zheng Bo, J.C. Sturm, and D.J. Norris, "On-chip assembly of silicon photonic band gap crystals," Mat. Res. Soc. Symp. Proc. 707, xx-xx (2001).
- X.Z. Bo, L. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "SiGe nanostructures fabricated by atomic force microscopy oxidation," Mat. Res. Soc. Symp. Proc. 686, pp. A6.5.1 - A6.5.6 (2001).
- L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R.H. Austin, E.C. Cox, "Generation of large-area tunable uniform electric fields in microfluid arrays for rapid DNA separation," Tech. Dig. Int. Elect. Dev. Mtg., pp. 363-366 (2001).
- F. Pschenitzka, K. Long, and J.C. Sturm, "Solvent vapor-enhanced dye diffusion for full-color OLED fabrication," Mat. Res. Soc. Symp. Proc. 665, pp. C9.5.1 - C9.5.7 (2001).
- (Invited) S. Wagner, S.J. Fonash, T.N. Jackson, and J.C. Sturm, "Flexible display enabling technology," SPIE 4362, pp. 226-244 (2001).
- K. Long, F. Pschenitzka, and J. C. Sturm, “Three-color passive-matrix pixel array with dye-diffusion-patterned thin-film and a novel tri-layer structure”, Mat. Res. Soc. Symp. Proc. 708, pp. BB6.8.1-BB6.8.6 (2001).
2000
- M. Yang, and J.C. Sturm, "Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs," Thin Solid Films 369, pp. 366-370 (2000).
- M.S. Carroll, and J.C. Sturm, "Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon," Mat. Res. Soc. Symp. Proc. 610, pp. B4.10.1-B4.10.6 (2000).
- P.I. Hsu, M. Huang, S. Wagner, Z. Suo, and J.C. Sturm, "Plastic deformation of thin foil substrates with amorphous silicon islands into spherical shapes," Mat. Res. Soc. Symp. Proc. 621, pp. Q8.6.1-Q8.6.6 (2000).
- M.H. Lu, C.F. Madigan, and J.C. Sturm, "Experiment and modeling of conversion of substrate-wave-guided modes to surface-emitted light by substrate patterning," Mat. Res. Soc. Symp. Proc. 621, pp. Q3.7.1-Q3.7.6 (2000).
- C.F. Madigan, T.R. Hebner, J.C. Sturm, Richard A. Register, Sandra Troian, "Lateral dye distribution with ink-jet dye doping of polymer organic light emitting diodes," Mat. Res. Soc. Symp. Proc. 624, pp. 211-216 (2000).
- (Invited) J.C. Sturm, M.S. Carroll, M. Yang, J. Gray, and E. Stewart, "Mechanisms and applications of the control of dopant profiles in silicon using Si1-x-yGexCy layers grown by RTCVD," Proc. Electrochem Soc. 2000-9, pp. 309-320 (2000)
- F. Pschenitzka, and J.C. Sturm, "Patterned dye diffusion using transferred photoresist for polymer OLED displays," Proc. SPIE 4105, pp. 58-68 (2000).
- (Invited) J.C. Sturm, P.I. Hsu, S.M. Miller, H. Gleskova, A. Darhuber, M. Huang, S. Wagner, S. Troian, and Z. Suo, "Three-dimensional electronic surfaces," Mat. Res. Soc. Proc. 636, pp. D11.4.1-D11.4.12 (2000).
- M.-H. Lu, C.F. Madigan, and J.C. Sturm, "Improved external coupling efficiency in organic light-emitting devices on high-index substrates," Tech. Dig. Int. Elec. Dev. Mtg. pp. 607-610 (2000).
1999
- L. Montès, L. Tsebeskov, P.M. Fauchet, K. Pangal, J.C. Sturm and S. Wagner, "Optical analysis of plasma enhanced crystallization of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 536, pp. 505-510 (1999).
- K. Pangal, Y. Chen, J.C. Sturm, S. Wagner, "Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer," Mat. Res. Soc. Symp. Proc. 557, pp. 629-634 (1999).
- X. Jiang, R.A. Register, F. Pschenitzka, and J.C. Sturm, Kelly A. Killeen, Mark E. Thompson, "Doped organic light-emitting diodes based on random copolymer containing both hole and electron transport groups," Mat. Res. Soc. Symp. Proc. 558, pp. 433-438 (1999).
- R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G.Kane, R.G. Stewart, M.H. Lu, A. Ipri, J.C. Sturm, et al, "A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers," SID Symposium Digest 30, 438 (1999).
- M. Carroll, M. Yang, and J.C. Sturm, "Ultrasharp phosphorus profiles in silicon epitaxy by low temperature rapid thermal chemical vapor deposition," Ext. Abs. Electrochem. Soc, p. XX (1999), and published as "Suppressed phosphorus autodoping in silicon epitaxy for ultrasharp phosphorus profiles by low temperature rapid thermal chemical vapor deposition," in Advances in Rapid Thermal Processing, Electrochem Soc Proc. Vol, 99-10, pp. 319-326 (1999).
- (Invited) J.C. Sturm, T.R. Hebner, F. Pschenitzka, and M.H. Lu, "System constraints and printing for large-area organic light-emitting displays," Proc. Asia-Pacific Symp. on Organic Electroluminescent Materials and Devices, 8.1 (1999).
- (Invited) J.C. Sturm, M. Yang, and M.S. Carroll, "Doped and undoped SiGeC layers for dopant profile control in sub-100 nm vertical MOSFET's," Tech. Dig. Silicon Nanoelectronics Workshop, pp. 56-57 (1999)
- Y. Chen, K. Pangal, J.C. Sturm and S. Wagner, "P-channel thin film transistor of microcrystalline silicon directly deposited at 320 oC," Tech. Dig. IEEE Dev. Res. Conf., pp. 168-169 (1999).
- E. Stewart, M. Carroll, C.L. Chang, and J.C. Sturm, "Boron segregation in polycrystalline Si1-x-yGexCy alloys," Tech. Prog. Elec. Mat. Conf. pp. 18-19 (1999).
- (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Printing approaches for large-area color organic LED displays," Proc. SPIE 3797, pp. 266-274 (1999).
- M. Yang, M.S. Carroll, and J.C. Sturm, "Doped vs. undoped SiGeC layers in sub-100 nm vertical p-channel MOSFET's," Dig. of Int. Joint. Conf. on Silicon Epitaxy and Heterostructures, pp. I5-I6 (1999).
- M. Wu, Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "High-performance polysilicon thin film transistors on steel substrates," Proc. 18th Int. Conf. on Amorphous and Microcrystalline Semiconductors (1999), published in J. Non-Crystalline Solids, vol. 266-269, pp. 1284-1288 (2000).
- Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "P-channel microcrystalline silicon thin film transistor fabricated at 320 oC," Proc. 18th Int. Conf. Amorph. and Microcryst. Silicon (1999), publsihed in J. Non-Crystalline Solids, vol. 266-269, pp. 1274-1278 (2000)
- M. Wu, K. Pangal, J.C. Sturm and S. Wagner, "High temperature polycrystalline silicon thin film transistor on steel substrates," Tech. Dig. Int. Elec. Dev. Mtg., pp. 119-122, (1999).
- F. Pschenitzka and J. C Sturm, "Three-color doping of polymer OLEDs by masked dye diffusion," Mat. Res. Soc. Symp. Proc. 558, pp. 513-518 (1999).
- M.S. Carroll, J.C. Sturm, and C.L. Chang, "Quantitative measurement of reduction of phosphorus diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 568, pp. 186 (1999).
- (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Large-area printing technologies for full color OLED integration," Organic Light Emitting Materials - 99, Frontier Science Research Conf, La Jolla, CA, Nov. (1999).
1998
- M.S. Carroll, L.D. Lanzerotti, and J.C. Sturm, "Quantitative measurement of reduction of boron diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 527, pp. 417-422 (1998).
- K. Pangal, J.C. Sturm, and S. Wagner, "Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's," Tech. Dig. Int. Elec. Dev. Mtg. pp. 261-264 (1998).
- C.L. Chang, S.P. Shukla, W. Pan, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/Si(100) modulation doped heterstructures," Thin Solid Films 321, pp. 51-54 (1998).
- K. Pangal, J.C. Sturm and S. Wagner, "Effect of plasma treatment on crystallization behavior of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 507, pp. 577-582 (1998).
- (Invited) J.C. Sturm, M. Yang, C.L. Chang, and M.S. Carroll, "Novel applications of rapid thermal chemical vapor deposition for nanoscale MOSFET's," Mat. Res. Soc. Symp. Proc. 525, pp. 273-281 (1998).
- C.L. Chang and J.C. Sturm, "Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures," Mat. Res. Soc. Symp. Proc. 525, pp. 213-218 (1998).
- C.L. Chang, L.P. Rokhinson, and J.C. Sturm, "Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p--Si(100) by heterojunction internal photoemission," Mat. Res. Soc. Symp. Proc. 533, pp. 245-250 (1998).
- R.M.A. Dawson, Z. Shen, M.H. Lu, J.C. Sturm et al, "Design of an improved pixel for a polysilicon active-matrix organic LED display," Dig. Soc. Info. Display Inter. Symp. pp. 11-14 (1998).
- K.A. Killeen, T.R. Hebner, F. Pschenitzka, M.H. Lu, M.E. Thompson, and J.C. Sturm, "Single-layer polymer blend organic light emitting diodes with electron transport polymers," Tech. Prog. Elec. Mat. Conf, pp.75 (1998).
- M.S. Carroll, C.L. Chang, J.C. Sturm, and T. Buyuklimanli, "Complete suppression of oxidation enhancement of boron diffusion using substitutional carbon incorporation," Tech. Prog. Elec. Mat. Conf. pp.14 (1998).
- M.H. Lu, E. Ma, J.C. Sturm, and S. Wagner, "Amorphous silicon TFT active-matrix OLED pixel," Proc. LEOS '98 1, pp. 130-131 (1998).
- (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, C.C. Wu, and W. Wilson, "Patterning approaches and system power efficiency consideration for organic LED displays," Proc. SPIE 3476, pp. 208-216 (1998).
- (Invited) J.C. Sturm. M. Yang, M.S. Carroll, and C.L. Chang, "Si1-x-yGexCy alloys: an enabling technology for scaled high performance silicon-based heterojunction devices," Proc. IEEE Silicon Monolithic Integrated Circuits in RF Systems, 1-2 (1998).
- R.M.A. Dawson, M.H. Lu, J.C. Sturm et al, "Impact of transient response of organic light emitting diodes on the design of active matrix OLED displays," Tech. Dig. Int. Elec. Dev. Mtg., pp. 875-878 (1998).
1997
- (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si1-x-yGexCy thin films and devices," Europe. Mat. Res. Soc. Symp. Proc. (1996), and Thin Solid Films 294, pp. 112-117 (1997).
- M. Carroll, L.L. Lanzerotti, C.C. Chang, and J.C. Sturm, "Silicon epitaxial regrowth in RTCVD for passivation of reactive ion-etched Si/SiGe/Si microstructures," Tech. Prog. Elect. Mater. Conf. pp. 16, (1997).
- S.J. Fonash, O. Awadelkarim, J.L. Crowley, T.N. Jackson, A. Kahn, J.C. Sturm, and S. Wagner, "Device technology for lightweight panoramic displays," Proc. SPIE, 3057, pp. 570-580 (1997).
- J.L. Crowley, O.O. Awadelkarim, S.J. Fonash, T.N. Jackson, A. Kahn, T.M. Peterson, J.C. Sturm and S. Wagner, "Industry/University teaming for display research," Proc. SPIE 3057, pp. 60-67 (1997).
- C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Organic LEDs integrated with a-Si TFTs on lightweight metal substrates," Digest of Technical Papers, SID International Symposium, pp. 67-70 (1997).
- D.L. Marcy, J.C. Sturm, M. Benes, and S. Chial, "3.3 \(\mu\)m pyrometry in single sided RTA from 400-700 oC using in-situ measurement of reflection and transmission," Mat. Res. Soc. Symp. Proc. 470, pp. 23-28 (1997).
- C.W. Liu, and J.C. Sturm, "The growth of ß-SiC on Si and poly-Si on ß-SiC by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 470, pp. 127-132 (1997).
- L.D. Lanzerotti, J.C. Sturm, E.A. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation," Mat. Res. Soc. Symp. Proc. 469, pp. 297-302 (1997).
- K. Pangal and J.C. Sturm, "Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation," 2nd Inter. Symp. on Plasma Process-Induced Damage, pp. 203-206 (1997).
- (Invited) J.C. Sturm, C.C. Wu, S.D. Theiss, and S. Wagner, "Doped-polymer organic light emitting diodes and OLED device integration," Tech. Dig. 12th International Miyazaki Symposium on Optical and Electrical Properties of Organic Materials, Fiber Society Japan, pp. S42-43 (1997).
- T.R. Hebner, C.C. Wu, D. Marcy, and J.C. Sturm, "Ink-jet printing of highly fluorescent molecularly doped polymers," Tech. Prog. Elec. Mater. Conf. pp. 3 (1997).
- D.L. Marcy and J.C. Sturm, "Teaching systems performance limitations through an integrated circuit fabrication laboratory," Proc. Amer. Soc. Eng'g. Education Annual Conf. (June 1997).
- (Invited) J.C. Sturm and C.C. Wu, "Integrated organic light emitting diode structures using doped polymers," Conf. Record 1997 Inter. Disp. Res. Conf, pp. F-11-F-18 (Sept. 1997).
- (Invited) J.C. Sturm, C.C. Wu, H.H. Lu, S.D. Theiss, E. Ma, and S. Wagner, "Processing and integration issues in organic light emitting displays," Proc. 1997 Inter. Semi. Dev. Res. Symp. pp. 417-420 (Dec. 1997).
- E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm, and S. Wagner, "Thin film transistors for foldable displays," Tech. Dig. Int. Elec. Dev. Mtg. pp. 535-538 (1997).
- C.L. Chang, S. Shukla, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ (100) modulation doped heterostructures," Tech. Dig. 7th Inter. Symp. Silicon Molec. Beam Epitaxy, pp. 45-46 (1997).
- E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm and S. Wagner, "Organic light-emitting diode/thin film transistor integration for foldable displays," Conf. Rec. International Display Res. Conf., Toronto, Sept. 15-19, pp. L78-81 (1997).
- S.D. Theiss, C.C. Wu, M. Lu, J.C. Sturm and S. Wagner, "Flexible, lightweight steel-foil substrates for a-Si:H thin-film transistors," Mat. Res. Soc. Symp. Proc. 471, pp. 21-26 (1997).
1996
- (Invited) J.C. Sturm, A. St. Amour, and C.W. Liu, "Rapid thermal chemical vapor deposition of silicon-based heterostructures," Transient Thermal Processing Techniques in Electronic Materials, The Minerals, Metals, and Materials Society, pp. 11-16 (1996).
- J.C. Sturm and A. St. Amour, "Low temperature chemical vapor deposition of column-IV heterostructures," Ext. Abs. of Thirteenth International Conf. on Chemical Vapor Deposition, Electrochem. Soc. 96-1, (1996).
- C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Electron injection effects in electroluminescent devices using polymer blend thin films," Mat. Res. Soc. Symp. Proc. 424, pp. 489-494 (1996).
- H. Xu and J.C. Sturm, "Effects of reflective surfaces on silicon emissivity and temperature measurements," Mat. Res. Soc. Symp. Proc. 429, pp. 297-302 (1996).
- J.C. Sturm and A. Wolfe, "Breadth and unity: a revised electrical engineering curriculum at Princeton University," Proc. Amer. Soc. Eng'g. Educ. Conf. Washington, DC, (June 1996).
- K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Microelectromechanical charge sensing devices," Tech. Dig. Dev. Res. Conf. pp. 118-119 (1996).
- S. Madhavi, Venkataraman,C.W. Liu and J.C. Sturm, "High field drift velocity of 2 DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques," Tech. Dig. Dev. Res. Conf. pp. 26-27 (1996).
- C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Strong electroluminescence from molecularly doped polymers," Tech. Prog. Elec. Mat. Conf. pp. 15-16 (1996).
- M. Yang and J.C. Sturm, "Strain field effects on bandgap and band alignment in pseudomorphic zero- and one-dimensional structures," Tech. Prog. Elec. Mat. Conf. 72 (1996).
- C.C. Wu, S. Theiss, M.H. Lu, J.C. Sturm, and S. Wagner, "Integration of organic LED's and amorphous Si TFT's onto unbreakable metal foil substrates," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 957-959 (1996).
- L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 249-252 (1996).
- C.C. Chang, A. St. Amour, and J.C. Sturm, "Effect of carbon on the valence band offset of Si1- x- yGexCy/Si heterojunction," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 257-260 (1996).
1995
- (Invited) J.C. Sturm, P.V. Schwartz, and Z. Lilienthal-Weber, "Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications," Physical and Technical Problems of SOI Structures and Devices, ed's J.P. Colinge, V.S. Lysenko, and A.N. Nazarov, NATO ASI Series, 3. High Technology 4, pp. 55-66 (1995).
- E. Chason, T.M. Mayer, Z. Matutinovic Krstelj, and J.C. Sturm, "Energy dispersive x-ray reflectivity characterization of semiconductor heterostructures and interfaces," Proceed. of NIST Semiconductor Characterization Workshop, Gaithersburg, MD. (Jan-Feb., 1995).
- (Invited) J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Luminescence in Si/strained Si1-xGex heterostructures," Mat. Res. Soc. Symp. Proc. 379, pp. 387-398 (1995).
- C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 379, pp. 441-446 (1995).
- H. Xu and J.C. Sturm, "Emissivity of rough silicon surfaces: measurement and calculations," Mat. Res. Soc. Symp. Proc. 387, pp. 29-34 (1995).
- J.C. Sturm and A. Reddy, "Low temperature (\(\geq\)400oC) silicon pyrometry at 1.1 \(\mu\)m," Mat. Res. Soc. Symp. Proc. 387, pp. 137-142 (1995).
- St. Amour, J.C. Sturm, K. Brunner, J. Weber, L. Lacroix, and M.L.W. Thewalt, "Band-Edge photoluminescence in pseudomorphically strained Si1-x-yGexCy layers on Si(100) substrates," Tech. Prog. Elec. Mat.Conf. pp. A37-38 (1995).
- C.C. Wu, J. Tian, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescence from polymer blends of poly (3-n-butyl-p-phridyl vinylene) and poly (9-vinylcarbazole)," Tech. Prog. Elec. Mat. Conf., pp. A53 (1995).
- C.L. Chang, A. St. Amour, L.D. Lanzerotti, and J.C. Sturm, "Growth and electrical performance of heterojunction p+-Si1-x-yGexCy/p--Si diodes," Mat. Res. Soc. Symp. Proc. 402, pp. 437-442 (1995).
- E. Cheng, J.C. Sturm, I.W. Wu, and T.J. King, "Modeling of leakage current distributions in series-connected polysilicon thin film transistors," Tech. Dig. Second Inter. Work. on Active Matrix LCD's, Lehigh University, pp. 102-105 (1995).
- C.C. Wu, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescent devices using polymer blend thin films," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 821-824 (1995).
- St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained Si1-xGex/Si heterostructures," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 769-772 (1995).
1994
- J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and J.F. Bockman, "Silicide/SiGe schottky diode infrared detectors," Proc. SPIE Symposium on OE/Aerospace Sensing, pp. 393-403 (1994).
- J.C. Sturm, A. St. Amour, S.L. Clark, Y. Lacroix and M.L.W. Thewalt, "MBE-like deep photoluminescence in CVD Si/Si1-xGex/Si quantum wells created by ion implantation and annealing," Tech. Prog. Elec. Mat. Conf. p. A13 (1994).
- C,W. Liu, A. St. Amour, and J.C. Sturm, "Low temperature chemical vapor deposition of SiGeC alloys on (100) Si substrates," Tech. Prog. Elec. Mat. Conf. p. A15 (1994).
- C.W. Liu, J.C. Sturm, Y.R.J. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and photoluminescence of strained <110> Si/Si1-x Gex/Si quantum wells grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 37-42 (1994).
- C.W. Cullen and J.C. Sturm, "Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries," Mat. Res. Soc. Symp. Proc. 342, pp. 23-28 (1994).
- A. St. Amour and J.C. Sturm, "Deposition of monolayer-scale germanium/silicon heterostructures by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 31-36 (1994).
- Z. Lilienthal-Weber, P.V. Schwartz, C.C. Wu, and J.C. Sturm, "Structure of oxygen-doped silicon grown by chemical vapor deposition at low temperature," J. Vac. Sci. Tech. B12, pp. 2511-2515 (1994).
- P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," Tech. Prog. Elect. Mat. Conf. pp. A29-A30 (1994).
- M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and metal-hydroxyquinoline compounds," Tech. Prog. Elec. Mat. Conf. p. A28 (1994).
- J.C. Sturm and P.V. Schwarrtz, "Epitaxial growth of silicon-based heterostructures by low temperature rapid thermal chemical vapor deposition," Proc. 2nd Int. RTP Conf.: RTP '94, (1994).
- M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register, and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and aluminum-tris (8 quinolate)," Polymer Preprints 35, (1994).
- J. Tian, M.E. Thompson, C.C. Wu, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Luminescent properties of conjugated poly(p-pyridyl-vinylene) and poly (p-pyridiniumvinylene)," Polymer Preprints 35, pp. 761 (1994).
- St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation," Abstracts of 25th IEEE Semiconductor Interface Specialists Conf. (1994).
- L. Lanzerotti, A. St. Amour, C.W. Liu, and J.C. Sturm, "Si/Si1-x-y GexCy/Si heterojunction bipolar transistors," Tech. Dig. Int. Elec. Dev. Mtg. pp. 930-932. (1994).
- J.C. Sturm, P.V. Schwartz, Z Lilienthal-Weber, "Semi-insulating oxygen-doped crystalline silicon by low temperature CVD," NATO Advanced Research Workshop on Physical and Technical Problems of SOI structures and Devices, pp. 79-20 (1994)
1993
- Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Evidence of phonon-absorption-assisted electron resonant tunneling in Si/Si1-xGex diodes," J. Vac. Sci. Tech. B 11, pp. 1145-1148 (1993).
- V. Venkataraman, C.W. Liu, and J.C. Sturm, "High mobility electron gases and modulation doped field effect transistors fabricated in Si/Si1-xGex by rapid thermal chemical vapor deposition," J. Vac. Sci. Tech. B 11, pp. 1176-1178 (1993).
- X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Modeling of parasitic barrier effects in silicide/Si1-xGex schottky-barrier infrared detectors fabricated with a silicon sacrificial layer," J. Vac. Sci. Tech. B 11, pp. 1168-1171 (1993).
- T.A. Kennedy, E.R. Glaser, D.J. Godbey, P.E. Thompson, C.H. Chern, K.L. Wang, X. Xiao, and J.C. Sturm, "ODMR of sharp luminescence from Si/Si1-xGex superlattices," J. Vac. Sci. Tech. B 11, pp. 1154-1158 (1993).
- (Invited) E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "Electrical characteristics of double-base Si/Si1-xGex/Si heterojunction bipolar transistors," J. Vac. Sci. Tech. B 11, pp. 1193-1198 (1993).
- (Invited) J.C. Sturm, X. Xiao, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 298, pp. 69-78 (1993).
- L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence of thin Si1-xGex quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 79-84 (1993).
- T. Steiner, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Visible photoluminescence from Si1-xGex quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 15-19 (1993).
- (Invited) J.C. Sturm, X. Xiao, Q. Mi, A. St. Amour, L.C. Lenchyshyn and M.L.W. Thewalt, "Opto-electronic applications of Si1-xGex heterostructures," Tech. Dig. Int. Conf. Solid State Device and Materials, pp. 198-200 (1993).
- V. Higgs, E.C. Lightowlers, J.C. Sturm, X. Xiao, and P.J. Wright, "CL imaging of Si/Si1-xGex/Si quantum wells grown by RTCVD," Proc. Microscopy of Semiconductor Materials 8, Oxford, UK, (1993).
- C.W. Liu and J.C. Sturm, "Growth of low-temperature cubic SiC on tilted and non-tilted (100) Si with 60-V breakdown ottky barriers," Proc. Vth Int. Conf. on Silicon Carbide and Related Materials, Inst. of Phys. Conf. Series Num. 137 (Inst. of Physics, London) pp. 83-36 (1993).
- J.C. Sturm, X. Xiao, Q. Mi, C.W. Liu, A. St. Amour, Z. Matutinovic-Krstelj, L.C. Lenchyshyn and M.L.W. Thewalt, "Photoluminescence and electroluminescence processes inSi1-xGex/Si heterostructures grown by chemical vapor deposition," Mater. Sci. and Eng. B21, pp. 307-311 (1993).
- V. Venkataraman, C.W. Liu, J.C. Sturm, "Effect of alloy scattering on low-temperature mobilities of two-dimensional holes and electrons in Si/Si1-xGex heterostructures," Tech. Prog. Elec. Mat. Conf. pp. A12 (1993).
- Z. Matutinovic-Krstelj, J.C. Sturm, and E. Chason, "Growth pressure effects on Si/Si1-xGex chemical vapor deposition," Tech. Prog. Elec. Mat. Conf., 39, p. A39 (1993).
- C.W. Liu, J.C. Sturm, and E.A. Fitzgerald, "Structural and electrical characterization of low-temperature cubic SiC on (100) Si," Tech Prog. Elec. Mat. Conf. pp. A41 (1993).
- Z. Matutinovic-Krstelj, E.J. Prinz, V. Venkataraman, and J.C. Sturm, "A comprehensive study of lateral and vertical current transport in Si/Si1-xGex/Si HBT's," Tech. Dig. Int. Elec. Dev. Mtg. pp. 87-90 (1993).
- J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Schottky barrrier heights of Pt and Ir silicides on SiGe," Mat. Res. Soc. Symp. Proc. 320, pp. 293 (1993).
1992
- J.C. Sturm, P.V. Schwartz, H. Manoharan, X. Xiao, and Q. Mi, "High lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition," Sensors and Actuators 33, pp. 29-32 (1992).
- (Invited) J.C. Sturm, X. Xiao, P.V. Schwartz, and C.W. Liu, "Band-edge exciton luminescence from Si/strained Si1-xGex/Si structures," J. Vac. Sci. Tech. B 10, pp. 1998-2001 (1992).
- E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic," (abs.), Tech. Prog. Dev. Res. Conf., IIA-2 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2636 (1992).
- Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3-\(\mu\)m and 1.5-\(\mu\)m electroluminescence from Si/Si1-xGex quantum wells," (abs.), Tech. Prog. Dev. Res. Conf., VIB-7 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2678 (1992).
- P.V. Schwartz, C.W. Liu, J.C. Sturm, T. Gong, and P.M. Fauchet, "Current transport properties of semi-insulating oxygen-doped films for use in high-speed photoconductive switches," Tech. Prog. Elec. Mat. Conf., pp. 49 (1992).
- X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Direct evidence by photoluminescence of type-I band alignment for strained Si1-xGex (x\(\leq\) 0.35) on (100) silicon," Tech. Prog. Elec. Mat. Conf. pp. 22-23 (1992).
- X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, and S. Palfrey, "Silicide/Si1-xGex schottky-barrier long-wavelength infrared detectors," Tech. Dig. Int. Elec. Dev. Mtg., pp. 125 (1992).
- P.V. Schwartz, J.C. Sturm, and C.W. Liu, "Oxygen-doped semi-insulating silicon grown by low-temperature rapid thermal chemical vapor deposition," Abstracts of 23rd IEEE Semiconductor Interface Specialists Conf. (1992).
1991
- J.C. Sturm, P. Prucnal, Y.-M. Liu, H. Manoharan, Q. Mi, P.V. Schwartz, and X. Xiao, "Applications of Si1-xGex strained layer alloys for silicon-based optical interconnects," Proc. IEEE Sarnoff Symp. (1991).
- J.C. Sturm, Q. Mi, P.V. Schwartz, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, J.P. Noel, N. Rowell, and D.C. Houghton, "Band-edge exciton photoluminescence in strained silicon-germanium alloy films grown by rapid thermal chemical vapor deposition," Tech. Prog. Electronic Materials Conf., 58, pp. A37-A38 (1991).
- X. Xiao, K.K. Goel, J.C. Sturm, and P.V. Schwartz, "Data transmission at 1.3 \(\mu\)m using a silicon spatial light modulator," Proc. Symp. SPIE on Optical Technology for Microwave Applications, 1476, pp. 301-304, (1991).
- Z. Matutinovic-Krstelj, E.J. Prinz, P.V. Schwartz, and J.C. Sturm, "Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," Mat. Res. Soc. Symp. Proc. 220, pp. 445-450 (1991).
- V. Venkataraman and J.C. Sturm, "Single and double two-dimensional hole gases at Si/SiGe heterojunctions grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 391-396 (1991).
- J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence from strained Si1-xGex layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 341-345 (1991).
- C.W. Liu, J.C. Sturm, P.V. Schwartz, and E.A. Fitzgerald, "Misfit dislocation nucleation mechanisms and metastability enhancement of selective Si1-xGex grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 238, pp. 85-90 (1991).
- J.C. Sturm, Q. Mi, X. Xiao, and P.V. Schwartz, "Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGex quantum wells and superlattices," Proc. Int. Conf. on Solid State Devices and Materials, pp. 150-152 (1991).
- J.C. Sturm, P.M. Garone, and V. Venkataraman, "High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures," Proc. Int. Conf. on Solid State Devices and Materials, pp. 261-263 (1991).
- (Invited) J.C. Sturm, "Strained Si1-xGex alloys for silicon-based heterojunction bipolar transistors," Tech. Dig. Government Microelectronics Applications Conf. 17, pp. 81-84 (1991).
- (Invited) J.C. Sturm, X. Xiao, Q. Mi, and H. Manoharan, "Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition," Proc. Symp. SPIE on Rapid Thermal and Integrated Processing 1595, pp. 90-98, (1991).
- E.J. Prinz and J.C. Sturm, "Current-gain early-voltage products in graded-base Si/Si1-xGex/Si heterojunction bipolar transistors," Tech. Prog. Dev. Res. Conf., pp. 38-39 (1991), and also in IEEE Trans. Elec. Dev. TED-38, pp. 2695-2696 (1991).
- J.C. Sturm and C.M. Reaves, "Physical modeling of non-invasive silicon temperature measurement by infrared absorption," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 895-898 (1991).
- E.J. Prinz and J.C. Sturm, "Analytical modeling and current gain-early voltage products in Si/Si1-xGex/Si heterojunction bipolar transistors," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 853-856 (1991).
- P.M. Garone and J.C. Sturm, "Mobility enhancement and quantum mechanical modeling in Si1-xGex channel MOSFET's from 90 to 300K," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 29-32 (1991).
1990
- J.C. Sturm, P.V. Schwartz, and P.M. Garone, "In-situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon," Journal Electronic Materials 19, pp. 1051-1054 (1990).
- J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications," Proc. Symp. on VLSI Tech. 10, pp. 107-119 (1990)
- P.V. Schwartz, J.C. Sturm, and C.W. Magee, "Reduction of oxygen incorporation and lifetime measurements in epitaxial Si1-xGex films grown by low temperature rapid thermal CVD," Tech. Prog. Elec. Mat. Conf. 19, pp. 19-20 (1990).
- J.C. Sturm and C.M. Reaves, "Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 309-315 (1990).
- J.C. Sturm, P.V. Schwartz, E.J. Prinz, and C. Magee, "Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 252-259 (1990).
- (Invited) J.C. Sturm, H. Manoharan, V. Venkataraman, P.V. Schwartz, and P.M Garone, "Control of individual layer growth temperatures by rapid temperature switching in Si1-xGex multilayer structures grown by rapid thermal chemical vapor deposition," Proc. Inter. Conf. on Elec. Mat. pp. 457-464 (1990).
- (Invited) J.C. Sturm, P.M. Garone, E.J. Prinz, P.V. Schwartz, and V. Venkataraman, "Interface abruptness in epitaxial silicon and silicon-germanium structures grown by rapid thermal chemical vapor deposition," Proc. of the Eleventh Inter. Conf. on Chemical Vapor Deposition, pp. 295-306 (1990).
- X. Xiao, J.C. Sturm, P.V. Schwartz, and K.K. Goel, "Vertical 1.3 \(\mu\)m optical modulator in silicon-on-insulator," Proc. IEEE SOS/SOI Tech. Conf., pp. 171-172 (1990).
- (Invited) J.C. Sturm, E.J. Prinz, P.V. Schwartz, P.M. Garone, and Z. Matutinovic, "Growth and transistor applications of Si1-xGex structures by rapid thermal chemical vapor deposition," Proc. First Topical Symp. on Silicon-Based Heterostructures, Amer. Vac. Soc., pp. 5-10 (1990).
- E.J. Prinz and J.C. Sturm, "Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150K to 370K," Inter. Electron Devices Mtg. Tech. Dig. pp. 975-978 (1990).
- P.M. Garone, V. Venkataraman, and J.C. Sturm, "Carrier confinement in MOS-Gated SiGe/Si quantum well structures," Inter. Electron Devices Mtg. Tech. Dig. pp. 383-386 (1990).
1989
- J.C. Sturm, X. Xiao, P.M. Garone, and P.V. Schwartz, "Electron-beam-induced-current (EBIC) imaging of defects in Si1-xGex multilayer structures," Mat. Res. Soc. Symp. Proc. 148, pp. 341 (1989).
- P.M. Garone, P.V. Schwartz, and J.C. Sturm, "Growth rate and doping kinetics in silicon-germanium films grown by Limited Reaction Processing," Mat. Res. Soc. Symp. Proc. 146, pp. 41 (1989).
- J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Oxygen incorporation in low temperature (625-800 oC) silicon and silicon-germanium epitaxial layers grown by vapor-phase techniques in a non-UHV system," Tech. Prog. Elec. Mat. Conf 64 (1989).
- K. Tokunaga, J.C. Sturm, and J.P. Colinge, "Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's," Proc. IEEE SOS/SOI Tech. Conf., pp. 15-16 (1989).
- G,K. Celler, H-I. Cong, R.L. Field, W.S. Lindenberger, L.E. Trimble, and J. C. Sturm, "6.2 Ghz digital CMOS circuits in thin SIMOX films," Proc. IEEE SOS/SOI Tech. Conf., pp. 139-140 (1989).
- E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base-emitter spacers and strain-dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors," Inter. Electron Devices Mtg. Tech. Dig., pp. 639-642 (1989).
- A. Kamgar, S.J. Hillenius, H.-I. Cong, R.L. Field, W.S. Lindenberger, G.K. Celler, L.E. Trimble, and J.C. Sturm, "Ultra-high speed CMOS circuits on thin SIMOX films," Inter. Electron Devices Mtg. Tech. Dig. pp. 829-832 (1989).
- P.V. Schwartz, J.C. Sturm, and P.M. Garone, "Extreme supersaturation of oxygen in low temperature epitaxial silicon and silicon-germanium alloys," Mat. Res. Soc. Symp. Proc. 163, pp. 591-596 (1989).
- J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Temperature measurement by infrared transmission for rapid thermal processing applications," Mat. Res. Soc. Symp. Proc. 157, pp. 401-406 (1989).
1988
- (Invited) J.C. Sturm, "Performance advantages of silicon-on-insulator for VLSI," Mat. Res. Soc. Symp. Proc. 107, pp. 295-308 (Pittsburgh, 1988).
- J.C. Sturm, K. Tokunaga, and J.P. Colinge, "Transconductance enhancement mechanisms in ultra-thin (<1000 Å) silicon-on-insulator MOSFET's," (abs.), Tech. Prog. Device Research Conf, 1988, also in IEEE Trans. Electron Dev. TED-35, pp. 2431-2432 (1988).
- J.C. Sturm, "Limited reaction processing and the growth of in-situ multi-layer structures," Ext. Abs. Electrochem. Soc. B88-1, pp. 102 (1988).
- (Invited) J.C. Sturm, "Increased transconductance in fully-depleted ultra-thin silicon-on-insulator MOSFET's," Proc. Of the 7th Future Electron Device Symposium, Tokyo, (November 1988).
1987
1986
- J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors and a merged 3-D vertical bipolar-MOS device in recrystallized polysilicon," Mat. Rec. Soc. Symp. Proc. 53, pp. 395-400 (North-Holland, New York, 1986).
- C.M. Gronet, J.C. Sturm, K.E. Williams, and J.F. Gibbons, "Limited reaction processing of silicon: oxidation and epitaxy," Mat. Res. Soc. Symp. Proc. 52, pp. 305-312 (North-Holland, 1986).
- C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, and J.F. Gibbons, "A seeded-channel approach to silicon-on-insulator technology," Mat. Res. Soc. Symp. Proc. 53, pp. 77-82 (North-Holland, New York, 1986).
- J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: situ epitaxial silicon-thin oxide-doped polysilicon layers for MOS transistors," Tech. Prog. Device Res. Conf., (1987)., also in IEEE Trans. Elec. Dev. TED-33, pp. 1847-1848 (1986).
1985
1983
- T.J. Stultz, J.C. Sturm, and J.F. Gibbons, "Beam processing of silicon with a scanning cw Hg lamp," Mat. Res. Soc. Symp. Proc. 13, pp. 463-476 (North Holland, New York, 1983).
- J.F. Gibbons, M.D. Giles, J.C. Sturm, and J.T. Walker, "Circuit simulation of three-dimensional devices in beam-recrystallized polysilicon films," Proc. Inter. Conf. on Solid-State Devices and Materials (SSDM), Tokyo, Japan, (Aug. 1983).