2024

• Y. Ma, S. Wagner, N. Verma and J.C. Sturm, "Design and Characterization of High Quality-Factor Inductors for Wireless Systems Compatible With Flexible Large-Area Electronics," in IEEE Journal on Flexible Electronics, vol. 3, no. 6, pp. 234-241, June 2024, doi: 10.1109/JFLEX.2024.3379975. View PDF
• Z. Zheng, P. Kumar, Y. Chen, H. Cheng, S. Wagner, M. Chen, N. Verma, J.C. Sturm, "Piezoelectric Soft Robot Inchworm Motion by Tuning Ground Friction Through Robot Shape: Quasi-Static Modeling and Experimental Validation," in IEEE Transactions on Robotics, vol. 40, pp. 2339-2356, 2024, doi: 10.1109/TRO.2024.3353035. View PDF
• C. Wu, Y. Ma, S. Venkatesh, Y. Mehlman, M. Ozatay, S. Wagner, J.C. Sturm, N. Verma., "A Monolithically Integrable Reconfigurable Antenna Based on Large-Area Electronics," in IEEE Journal of Solid-State Circuits, vol. 59, no. 5, pp. 1475-1485, May 2024, doi: 10.1109/JSSC.2023.3322905. View PDF

2023

• H. Cheng, Z. Zheng, P. Kumar, Y. Chen, J. Baek, B. Kim, S. Wagner, N. Verma, J.C. Sturm, M. Chen, "A Flexible Lightweight 7.4 V Input 300 V to 1500 V Output Power Converter for an Untethered Modular Piezoelectric Soft Robot," 2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL), Ann Arbor, MI, USA, 2023, pp. 1-7, doi: 10.1109/COMPEL52896.2023.10221022. {View PDF
• H. Cheng, Z. Zheng, P. Kumar, W. Afridi, B. Kim, S. Wagner, N. Verma, J. C. Sturm, M. Chen, “eViper: A Scalable Platform for Untethered Modular Soft Robots,” IEEE Int’l Conf. on Intelligent Robots and Systems (IROS), Oct. 2023. View PDF
• Y. Ma, S. Wagner, N. Verma, and J. C. Sturm, “High Quality-Factor Planar Inductors Compatible with Flexible Large-Area Electronics for Integrated IoT and 5G/6G Applications” IEEE Int’l Flexible Elec. Tech. Conf. (IFETC), Sept. 2023, 10.1109/IFETC57334.2023.10254834. View PDF
• Y. Ma, S. Wagner, N. Verma, and J. C. Sturm, “fMAX Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors” IEEE Device Research Conf. (DRC), June 2023. View PDF
• Z. Zheng, H. Cheng, P. Kumar, S. Wagner, M. Chen, N. Verma, and J. C. Sturm, “Wirelessly-controlled Untethered Piezoelectric Planar Soft Robot Capable of Bi-directional Crawling and Rotation” IEEE Int’l Conf on Robotics and Automation (ICRA), May 2023, pp. 641-647. View PDF
• Y. Ma, S. Wagner, N. Verma, and J. C. Sturm, “Analysis and Design of High Quality-factor On-chip Inductors in Large-area Electronics for Integrated IoT and 5G/6G Applications,” Engineering Conferences International (ECI), May 2023. View PDF

2022

• Y. Ma, C. Wu, N.M. Fata, P. Kumar, S. Wagner, J.C. Sturm, N. Verma, "Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics," in IEEE Open Journal of the Solid-State Circuits Society, vol. 2, pp. 177-192, 2022, doi: 10.1109/OJSSCS.2022.3217759. View PDF
• Z. Zheng, P. Kumar, H. Cheng, Y. Chen, M. Chen, S. Wagner, N. Verma, and J. C. Sturm, “A Crawling Piezoelectric Ribbon: Design, Modeling, Control, and Performance,” Materials Research Society (MRS) – Spring Meeting, May 2022.
• Z. Zheng, P. Kumar, Y. Chen, H. Cheng, S. Wagner, M. Chen, N. Verma and J. C. Sturm, “Scalable Simulation and Demonstration of Jumping Piezoelectric 2-D Soft Robots,” IEEE Int’l Conf. on Robotics and Automation (ICRA), May 2022, pp. 5199-5204. View PDF
• Z. Zheng, P. Kumar, Y. Chen, H. Cheng, S. Wagner, M. Chen, N. Verma, and J. C. Sturm, “Model-Based Control of Planar Piezoelectric Inchworm Soft Robot for Crawling in Constrained Environments,” IEEE-RAS Int’l Conf. on Soft Robotics (RoboSoft), April 2022, pp. 693-698. View PDF

2021

• C. Wu, Z. Li, S. Wagner, J.C. Sturm, N. Verma, and K. Jamieson, "Reflective surface for intelligent transportation systems," HotMobile '21: Proceedings of the 22nd International Workshop on Mobile Computing Systems and Applications, February 2021. DOI:
  10.1145/3446382.3448650 View PDF
• (Invited) C. Wu, Y. Ma, Y. Mehlman, S. Wagner, J.C. Sturm, N. Verma, “Gigahertz Large-Area Electronic Devices and Circuits for Wireless Applications,” Proceedings of AM-FPD 21: The Twenty-Eighth International Workshop on Active-Matrix Flat Panel Displays and Devices
  – TFT Technologies and FPD Materials, pgs. 51-54. DOI: 10.23919/AMFPD52126.2021.9499158 View PDF
• Z. Zheng, P. Kumar, S. Wagner, N. Verma, and J.C. Sturm, “Analytical Model of Locomotion of a Thin-Film Piezoelectric 2D Soft Robot Including Gravity Effects, World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering, 15 (5), 2021. View PDF

2020

• C. Wu, Y. Ma, S. Venkatesh, Y. Mehlman, S. Wagner, J. Sturm, and N. Verma, "Gigahertz Large-Area-Electronics RF Switch and its Application to Reconfigurable Antennas," 2020 IEEE International Electron Devices Meeting (IEDM), pp. 741–744, 2020. View PDF
• W. Liang, R.H. Austin, and J.C. Sturm, “Scaling of DLD devise for cell fractionation down to a single column for ultrahigh throughput per area,” Tech Dig. 24th International Conference on Miniaturized Systems for Chemistry and Life Sciences (μTAS), October 4 - 9, 2020, pp. 647-648 View PDF

2019

• L. E. Aygun, P. Kumar, Z. Zheng, T. Chen, S. Wagner, J.C. Sturm, N. Verma, "Hybrid LAE-CMOS Force-Sensing System Employing TFT-Based Compressed Sensing for Scalability of Tactile Sensing Skins," in IEEE Transactions on Biomedical Circuits and Systems, vol. 13, no. 6, pp. 1264-1276, Dec. 2019, doi: 10.1109/TBCAS.2019.2948326.  View PDF
• L. E. Aygun, P. Kumar, Z. Zheng, T. Chen, S. Wagner, J.C. Sturm, N. Verma, "17.3 Hybrid System for Efficient LAE-CMOS Interfacing in Large-Scale Tactile-Sensing Skins via TFT-Based Compressed Sensing," 2019 IEEE International Solid-State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 280-282, doi: 10.1109/ISSCC.2019.8662442. View HTML
• V. Kumar, L.E. Aygun, N. Verma, J.C. Sturm, and B. Glisic, “Sensing sheets based on large-area electronics for structural health monitoring of bridges" Conference on Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems Location, Proc. SPIE vol. 10970, pp. 1-9 (2019). doi: 10.1117/12.2514223 View PDF
• Z. Zheng, L.E. Aygun, Y. Mehlman, S. Wagner, N. Verma and J. C. Sturm, “Analyzing and increasing yield of ZnO thin-film transistors for large-area sensing systems by preventing process-induced gate dielectric breakdown, Tech. Dig. Device Research Conf. (2019). View PDF
• Y. Mehlman, C. Wu, S. Wagner, N. Verma and J. C. Sturm, "Gigahertz Zinc-Oxide TFT-Based Oscillators," 2019 Device Research Conference (DRC), Ann Arbor, MI, USA, 2019, pp. 63-64, doi: 10.1109/DRC46940.2019.9046405. View PDF

2018

• Y. Mehlman, P. Kumar, M. Ozatay, S. Wagner, J. C. Sturm and N. Verma, "Large-Area Electronics HF RFID Reader Array for Object-Detecting Smart Surfaces," in IEEE Solid-State Circuits Letters, vol. 1, no. 8, pp. 182-185, Aug. 2018, doi: 10.1109/LSSC.2019.2902063. View PDF
• M. Ozatay, L. Aygun, H. Jia, P. Kumar, Y. Mehlman, C. Wu, S. Wagner, J.C. Sturm, N. Verma, “Artificial Intelligence Meets Large-Scale Sensing: using Large-Area Electronics (LAE) to enable intelligent spaces,” 2018 IEEE Custom Integrated Circuits Conference, 2018 View PDF
• J. Jhaveri, A. H. Berg and J. C. Sturm, "Isolation of Hole Versus Electron Current at p-Si/TiO2 Selective Contact Using a Heterojunction Bipolar Transistor Structure," in IEEE Journal of Photovoltaics, vol. 8, no. 3, pp. 726-732, May 2018, doi: 10.1109/JPHOTOV.2018.2819667. View PDF
• Y. Afsar, T. Moy, N. Brady, S. Wagner, J. C. Sturm and N. Verma, "An Architecture for Large-Area Sensor Acquisition Using Frequency-Hopping ZnO TFT DCOs," in IEEE Journal of Solid-State Circuits, vol. 53, no. 1, pp. 297-308, Jan. 2018, doi: 10.1109/JSSC.2017.2740383. View PDF

2017

• J. Jhaveri, A. Berg, S. Wagner and J. C. Sturm, "Measurement of TiO2/p-Si Selective Contact Performance Using a Heterojunction Bipolar Transistor with a Selective Contact Emitter," 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), Washington, DC, USA, 2017, pp. 1773-1776, doi: 10.1109/PVSC.2017.8366427. View PDF
• Y. Afsar, T. Moy, N. Brady, S. Wagner, J.C. Sturm, and Naveen Verma, "Large-Scale Acquisition of Large-Area Sensors Using an Array of Frequency-Hopping ZnO Thin-Film-Transistor Oscillators," 2017 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, 2017, pp. 256-257 View PDF
• L.E. Aygun, S. Wagner, N. Verma, and J.C. Sturm, "High-Frequency ZnO Schottky Diodes for Non-contact Inductive Power Transfer in Large-Area Electronics," 2017 75^th Annual Device Research Conference (DRC), South Bend, IN, 2017 View PDF
• A.H. Berg and J.C. Sturm, "Extracting Interface Recombination Velocities from Double-Heterojunction Solar Cell Reverse-Recovery Characteristics," 2017 75^th Annual Device Research Conference (DRC), South Bend, IN, 2017 View PDF
• Y. Mehlman, Y. Afsar, N. Verma, S. Wagner, and J.C. Sturm, "Self-Aligned ZnO Thin-Film Transistors with 860 MHz f_T and 2 GHz f_max for Large-Area Applications," 2017 75^th Annual Device Research Conference (DRC), South Bend, IN, 2017 View PDF
• T. Moy, W. Rieutort-Louis, L. Huang, S. Wagner, J.C. Sturm, and Naveen Verma, "Information-processing driven interfaces in hybrid large-area electronics systems," 2017 IEEE International Symposium on Circuits and Systems (ISCAS), Baltimore, MD, 2017 View PDF

​​2016

• Alexander H. Berg, Girija S. Sahasrabudhe, Ross A. Kerner, Barry P. Rand, Jeffrey Schwartz, and James C. Sturm, "Electron-blocking NiO/Crystalline n-Si Heterojunction Formed by ALD at 175°C," 74th Annual Device Research Conference (June 19-22). View PDF
• Yasmin Afsar, Jenny Tang, Warren Rieutort-Louis, Liechao Huang, Yingzhe Hu, Josue Sanz-Robinson, Sigurd Wagner, Naveen Verma, and James C. Sturm, "Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems," SID Symp Digest, Vol.47(1), pp. 207-210 (May 22–27). View PDF
• Janam Jhaveri, Alexander H. Berg, Sigurd Wagner and James C. Sturm, "Al/TiO2/p-Si Heterojunction as an Ideal Minority Carrier Electron Injector for Silicon Photovoltaics," Proc. IEEE Photovoltaic Specialist Conf (PVSC), June 5-10, 2016, Portland, OR View PDF
• Warren Rieutort-Louis, Tiffany Moy, Zhuo Wang, Sigurd Wagner, James C. Sturm, and Naveen Verma, "A Large-Area Image Sensing and Detection System Based on Embedded Thin-Film Classifiers," IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 51, NO. 1, JANUARY 2016 View PDF
• Josue Sanz-Robinson, Liechao Huang, Tiffany Moy, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, "ROBUST BLIND SOURCE SEPARATION IN A REVERBERANT ROOM BASED ON BEAMFORMING WITH A LARGE-APERTURE MICROPHONE ARRAY," 2016 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP), Shanghai, 2016, pp. 440-444. View PDF

2015

• L. Huang, J. Sanz-Robinson, T. Moy, Y. Hu, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "Reconstruction of Multiple-user Voice Commands Using a Hybrid System Based on Thin-film Electronics and CMOS", VLSI Symp. on Circuits, pp. C196-197, DOI: 10.1109/VLSIT.2015.7223650 (2015). View PDF
• T. Moy, W. Rieutort-Louis, J.C. Sturm, S. Wagner, and N. Verma, "TFT-based Calibration Circuit for Thin-film Photoconductors", Int'l Thin-Film Transistor Conf. (ITC), (FEB 2015). View PDF
• W. Rieutort-Louis, R. Shidachi, Y. Afsar, J.C. Sturm, N. Verma, T. Someya, and S. Wagner, "Representative Flicker Noise Measurements for Low-temperature Amorphous Silicon, Organic, and Zinc Oxide Thin-film Transistors", Int'l Thin-Film Transistor Conf. (ITC) (FEB 2015). View PDF
• W. Rieutort-Louis, T. Moy, Z. Wang, S. Wagner, J.C. Sturm, and N. Verma, "A Large-area Image and Sensing and Detection System Based on Embedded Thin-film Classifiers", Int'l Solid-State Circuits Conf. (ISSCC), pp. 292-293 (FEB 2015). View PDF
• Sigurd Wagner, Josue Sanz-Robinson, Warren Rieutort-Louis, Liechao Huang, Tiffany Moy, Yingzhe Hu, Yasmin Afsar, James C. Sturm, and Naveen Verma, "Investigating the Architecture of Flexible Large-Area Hybrid Systems," Information Display Vol. 31(4). View PDF
• Janam Jhaveri, Ken A. Nagamatsu, Alexander H. Berg, Gabriel Man, Girija Sahasrabudhe, Sigurd Wagner, Jeffrey Schwartz, Antoine Kahn, and James C. Sturm, "Double-Heterojunction Crystalline Silicon Solar Cell with Electron-Selective TiO2 Cathode Contact Fabricated at 100oC with Open-Circuit Voltage of 640 mV," Proc. IEEE 42nd Photovoltaic Spec. Conf. (June 14-19). View PDF

2014

• B. Visweswaran, S. Mohan, P. Mandlik, J. Silvernail, R. Ma, J. Sturm, S. Wagner, "Predicting the Lifetime of Flexible Permeation Barrier Layers for OLED Displays", SID Digest 10.3 San Francisco (JUN 2014). View PDF
• L. Huang, W. Rieutort-Louis, A. Gualdino, L. Teagno, Y. Hu, J. Mouro, J. Sanz-Robinson, J.C. Sturm, S. Wagner, V. Chu, J. Conde, and N. Verma, "An ASIC for Readout of Post-processed Thin-film MEMS Resonators by Employing Capacitive Interfacing and Active Parasitic Cancellation", VLSI Symp. on Circuits (VLSI) (JUN 2014). View PDF
• S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, J.C. Sturm, "Double-Heterojunction Crystalline Silicon Solar Cell Fabricated at 250 C with 12.9% Efficiency," 2014 PVSC, IEEE 40th, DOI: 10.1109/PVSC.2014.6925069 (JUN 2014). View PDF
• T. Moy, W. Rieutort-Louis, Y. Hu, L. Huang, J. Sanz-Robinson, J.C. Sturm, S. Wagner, and N. Verma, "Thin-film Circuits for Scalable Interfacing Between Large-area Electronics and CMOS ICs", Device Research Conference (DRC), (2014). View PDF
• W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J.C. Sturm, N. Verma, and S. Wagner, "Current Cain of Amorphous Silicon Thin-Film Transistors Above the Cutoff Frequency", Device Research Conference (DRC) (2014) View PDF
• Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, S. Wagner, J.C. Sturm, and N. Verma, "3D Gesture-Sensing System for Interactive Displays Based on Extended-Range Capacitive Sensing", ISSCC, Session 12.2, pp. 212-213 (FEB 2014). View PDF
• Y. Hu, T. Moy, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "3D Multi-Gesture Sensing System for Large Areas based on Pixel Self-Capacitance Readout using TFT Scanning and Frequency-Conversion Circuits", IEEE CICC M-11, (SEPT 2014). View PDF
• Janam Jhaveri, Sushobhan Avasthi, Ken Nagamatsul, and James C. Sturm, "Stable Low-Recombination n-Si/Ti02 Hole-blocking Interface and Its Effect on Silicon Heterojunction Photovoltaics," Proc. IEEE 40th Photovoltaic Spec. Conf. (June 8-13). View PDF
• W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz Robinson, S. Wagner, J. C. Sturm, and N. Verma, "A Complete Fully Thin-Film PV Harvesting and Power-Management System on Plastic With On-Sheet Battery Management and Wireless Power Delivery to Off-sheet Loads," in IEEE Journal of Photovoltaics, vol. 4, no. 1, pp. 432-439, Jan. 2014, doi: 10.1109/JPHOTOV.2013.2285959. View PDF

2013

• C.-T. Huang, J.-Y. Li, J.C. Sturm, "Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two-Dimensional Electron Gases with Thin SiGe Cap Layers", ECS Transactions 53 (1) pp. 45-50 (2013). View PDF
• J. Jhaveri, S. Avasthi, G. Man, W. McClain, K. Nagamatsu, J. Schwartz, A. Kahn, J.C. Sturm, "Hole-blocking Crystalline Silicon/Titanium-Oxide Heterojunction with Very Low Interface Recombination Velocity", Proc. IEEE Photovoltaic Spec. Conf. (PVSC), Paper 912, Tampa, FL (JUN 2013). View PDF
• J. Sanz Robinson, W. Rieutort-Louis, Y. Hu, L. Huang, N. Verma, S. Wagner, and J.C. Sturm, "High Current Density, Hybrid Nanocrystalline/Amorphous Silicon Schottky Diodes", Int'l Conf. on Amorphous and Nano-crystalline Semiconductors (ICANS) (AUG 2013). View PDF
• J. Sanz Robinson, Y. Hu, W. Rieutort-Louis, L. Huang, N. Verma, S. Wagner, and J.C. Sturm, "Hybrid Nanocrystalline/Amorphous-silicon Schottky Diodes for Large-area Electronic Systems", Materials Research Society Meeting (MRS) (APR 2013). View PDF
• J.C. Sturm, S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, "Wide Bandgap Heterojunctions on Crystalline Silicon", ECS Trans. 58, pp. 97-105 (2013) View PDF
• K. Nagamatsu, S. Avasthi, J. Jhaveri, J.C. Sturm, "A 12% Efficient Silicon/PEDOT: PPS Heterojunction Solar Cell Fabricated at < 100 C", Proc. IEEE Photovoltaic Spec. Conf. (PVSC), Paper 908, Tampa, FL (JUN 2013). View PDF
• L. Huang, W. Rieutort-Louis, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "A Super-regenerative Radio on Plastic Based on Thin-film Transistors and Antennas on Large Flexible Sheets for Distributed Communication Links", Proc. IEEE Int'l Solid-State Circuits Conf. (ISSCC), pp. 458-459, (FEB 2013). View PDF
• W. Rieutort-Louis, J. Sanz Robinson, Y. Hu, L. Huang, J.C. Sturm, N. Verma, S. Wagner, "Readout from Amorphous Silicon Thin-film Transistor-based Strain Sensing Sheets over Non-contact Interfaces using a TFT Gilbert-Type Modulator", Int'l Conf. on Amorphous and Nano-crystalline Semiconductors (ICANS) (AUG 2013). View PDF
• W. Rieutort-Louis, Y. Hu, L. Huang, J. Sanz Robinson, S. Wagner, N. Verma, and J.C. Sturm, "Effect of Low-Temperature TFT Processing on Power Delivery from Thin-Film Power Electronics on Flexible Substrates", Materials Research Society Meeting (MRS) (APR 2013). View PDF
• Y. Hu, L. Huang, J. Sanz-Robinson, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "A Fully Self-powered Hybrid System based on CMOS ICs and Large-area Electronics for Large-scale Strain Monitoring", Proc. IEEE Symp. VLSI Circuits (VLSIC), (JUN 2013). View PDF
• Y. Hu, L. Huang, J. Sanz-Robinson, W. Rieutort-Louis, S. Wagner, J.C. Sturm, and N. Verma, "Energy Harvesting and Power-management for Sensing Skins in SHM Applications", Proc. The 9th Int'l Workshop on Structural Health Monitoring (IWSHM), pp. 2771-2778 (SEPT 2013). View PDF

2012

• W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "A figure of merit for oscillator-based thin-film circuits on plastic for high-performance signaling, energy harvesting and driving of actuation circuits, Device Research Conference (DRC), 10.1109/DRC.2012.6256980 pp. 117-118 University Park, PA JUN (2012). View PDF
• T. Liu, S. Wagner, J.C. Sturm, "Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field", Device Research Conference (DRC), 10.1109/DRC.2012.6257025 pp. 245-246 University Park, PA JUN (2012). View PDF
• S. Avasthi, W. McClain, J. Schwartz, J.C. Sturm, "Hole-blocking Ti02/silicon heterojunction for silicon photovoltaics", Device Research Conference (DRC), 10.1109/DRC.2012.6256955 pp. 93-94 University Park, PA JUN (2012). View PDF
• J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, J.C. Sturm, "Frequency dependence of amorphous silicon Schottky diodes for Large-Area rectification applications", Device Research Conference (DRC), 10.1109/DRC.2012.6257001 pp. 135-136 University Park, PA JUN (2012). View PDF
• L. Huang, W. Rieutort-Louis, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Integrated all-silicon thin-film power electronics on flexible sheets for ubiquitous wireless charging stations based on solar-energy harvesting", VLSI Circuits Symposium, 10.1109/VLSI.2012.6243858, pp. 198-199 Honolulu, HI JUN (2012). View PDF
• Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, K. Song, J.C. Sturm, S. Wagner, N. Verma, "High-resolution sensing sheet for structural-health monitoring via scalable interfacing of flexible electronics with high-performance ICs", VLSI Circuits Symposium, 10.1109/VLSI.2012.6243819, pp. 120-121 Honolulu, HI JUN (2012). View PDF
• C.-T. Huang, J.-Y. Li, J.C. Sturm, "High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222514 pp. 1-2 Berkeley, CA JUN (2012). View PDF
• J.-Y. Li, C.-T. Huang, J.C. Sturm, "Extremely Sharp Phosphorus Turn-off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVD", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222436 pp. 1-2 Berkeley, CA JUN (2012). View PDF
• Y. Hu, W. Rieutort-Louis, L. Huang, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Flexible solar-energy harvesting system on plastic with thin-film LC oscillators operating above ft for inductively-coupled power delivery", Custom Integrated Circuits Conference (CICC), 10.1109/CICC.2012.6330627 pp. 1-4 San Jose, CA SEPT (2012). View PDF
• T. Liu and J.C. Sturm, "3-TFT OLED Pixel Cicruit for High Stability with In-pixel Current Source", SID Symposium Digest of Technical Papers, 43, pp.1101-1103, doi: 10.1002/j.2168-0159.2012.tb05984.x (2012). View PDF
• J.-Y. Li, C.-T. Huang and J.C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating”, Abstracts of ECS Electrochemical Energy Summit PRiME, Honolulu, HI, OCT (2012), vol 2012-02, paper 2695, ISSN 2151-2041 (print), 2151-2043 (on-line). View PDF
• W. Rieutort-Louis, J. Sanz-Robinson, J.C. Sturm, S. Wagner, and N. Verma, "Thin-film Transistors and Circuit-design Styles for Scalable Control and Access Functionality over Sensor Arrays on Plastic", MRS Meeting (APR 2012). View PDF
• J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J.C. Sturm, "A Full-wave Bridge Rectifier Based on Thin-film Amorphous-silicon Schottky Diodes for Wireless Power and Signal Transfer in Systems-on-plastic", MRS Meeting (APR 2012). View PDF
• W. Rieutort-Louis, J. Sanz-Robinson, Y. Hu, L. Huang, J.C. Sturm, N. Verma, and S. Wagner, "Device Optimization for Integration of Thin-Film Power Electronics with Thin-film Energy-harvesting Devices to Create Power-delivery Systems on Plastic Sheets", Int. Electron Device Meeting (IEDM) (DEC 2012). View PDF

2011

• J.C. Sturm, Y. Huang, L. Han, T. Liu, B. Hekmatshoar, K. Cherenack, E. Lausecker, and S. Wagner, "Amorphous Silicon: The Other Silicon," Ultimate Integration on Silicon (ULIS) 2011, Cork, Ireland MARCH (2011) View PDF
• I. Chan, R. Cheng, H-C. Cheng, C-C. Lee, T. Liu, B. Hekmatshoar, Y. Huang, S. Wagner, and J.C. Sturm, "Amorphous Silicon Thin-Film Transistors with Low-Stress Silicon Nitride for Flexible Display," MRS 2011 Spring Proceedings, San Francisco, APRIL (2011) View PDF
• T. Liu, S. Wagner and J.C. Sturm, "A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests," Tech. Proc. of IEEE International Reliability Physics Symp., pp. 2E.3.1 - 2.23.5 (2011) View PDF

2010

• S. Avasthi, G. Vertelov, J. Schwartz, J.C. Sturm, "Reduction of Minority Carrier Recombination at Silicon Surfaces and Contacts Using Organic Heterojunctions," 34th IEEE PVSC Conference 2009 Philadelphia FEB (2010) View PDF
• Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh," pp. 179-180, IEEE/DRC Technical Digest, JUNE (2010) View PDF
• Sigurd Wagner, Lin Han, Bahman Hekmatshoar, Katherine Song, Prashant Mandlik, Kunigunde H. Cherenack, and James C. Sturm, "Amorphous Silicon TFT Technology for Rollable OLED Displays," pp. 917 - 920, SID 10 DIGEST(2010) View PDF

2009

• J.C. Sturm, B. Hekmatshoar, K. Cherenack, S. Wagner, "Enabling Mechanisms for a-Si TFT's with 100-year Lifetimes Compatible with Clear Plastic Substrates," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ècole Polytechnique, Massy-Palaiseau, France MARCH (2009) View PDF
• Y. Huang, S. Wagner, J.C. Sturm, "Transient phenomena in top-gate amorphous silicon thin film transistor with low-temperature self-aligned silicide source/drain and high mobility," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009) View PDF
• K. H. Cherenack, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Self-alignment techniques for fabricating a-Si TFTs at 300 ^oC on clear plastic," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009) View PDF
• B. Hekmatshoar, S. Wagner and J. C. Sturm, “Optimum Low-Gate-Field and High-Gate-Field Stability of Amorphous Silicon Thin-Film Transistors with a Single Plastic-Compatible Gate Nitride Deposition Process”, 67th Annual Device Research Conference (DRC 2009) Conference Digest, pp. 189-190, June 2009 View PDF
• H. Jin and J. C. Sturm, "Super-High Resolution Transfer Printing for Full-Color OLED Display Patterning," SID 09 Digest, pp. 597-599, JUNE (2009) View PDF
• J.C. Sturm, B. Hekmatshoar, K. Cherenack and S. Wagner, "Amorphous Silicon TFT's with 100-year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs," SID 09 Digest, pp. 979-982, JUNE (2009)t, pp. 597-599, JUNE (2009) View PDF
• Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Amorphous silicon floating-gate thin film transistor," pp. 135-136, IEEE/DRC Technical Digest, JUNE (2009) View PDF
• J-Y. Li and J.C. Sturm, "Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD," IEEE/DRC Technical Digest JUNE (2009) View PDF

2008

• K.H. Cherenack, A.X. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, “Self-Aligned Amorphous Silicon Thin Film Transistors With Mobility Above 1 cm2 V-1s -1 Fabricated at 300o C on Clear Plastic Substrates,” MRS Proc. Vol. 1066, San Francisco, March 2008 View PDF
• B. Hekmatshoar, K. Cherenack, K. Long, A. Kattamis, S. Wagner, J.C. Sturm, "AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme," 66th Annual Device Research Conference (DRC 2008) Digest, pp. 243-244, June 2008 View PDF
• J.C. Sturm, K.H. Chung, "Chemical Vapor Deposition Epitaxy of Silicon-based Materials Using Neopentasilane," Electrochemical Society Meeting, ECS Transactions, Vol. 16, Honolulu, HI, October (2008) View PDF
• J. C. Sturm, B, Hekmatshoar, K. Cherenack, S. Wagner, "The Quest for the TFT Fountain of Youth," MRS Proc. Symposium G, 1114E, December (2008) View PDF
• B. Hekmatshoar, K. Cherenack, S. Wagner and J. C. Sturm, “Amorphous Silicon Thin-Film Transistors with DC Saturation Current Half-Life of More than 100 Years”, Technical Digest - 2008 IEEE International Electron Devices Meeting (IEDM 2008) , pp. 89-92, December (2008) View PDF
• Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-Film Transistors with Self-Aligned Silicide Source and Drain," pp. 241-242 IEEE/DRC JUNE (2008) View PDF

2007

• K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J.C. Sturm and S. Wagner, "Stable Flexible TFT Backplanes on Clear Plastic," USDC Flexible Display and Microelectronics Conference, Phoenix, AZ, Feb. 2007 View PDF
• J.C. Sturm, K. Chung, E. Sanchez, S. Kuppuroa, "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007. View PDF
• K. Chung and J. Sturm, "Chlorine for in-situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007. View PDF
• B. Hekmatshoar, A. Z. Kattamis, K. Cherenack, S. Wagner and J. C. Sturm, "Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current," Device Research Conference, Chicago, IL, May 2007. View PDF
• B. Hekmatshoar, K. Long*, S. Wagner, and J.C. Sturm, "Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors, Device Research Conference, Chicago, IL, May 2007. *Present address: Flexible Display Center, Arizona State University, Tempe, AZ 85284 View PDF
• J.C. Sturm, B. Hekmatshoar, K. Cherenack, A. Kattamis, and S. Wagner, "Active-Matrix OLED's with High-Lifetime Amorphous Silicon Transistors on Clear Plastic Substrates," MRS Proc. Vol. 1030E, November 2007 View PDF

2006

• I-Chun Cheng, A. Z. Kattamis, K. Long, J. C. Sturm and S. Wagner, "Self-aligned amorphous-silicon TFTs on clear plastic substrates," in IEEE Electron Device Letters, vol. 27, no. 3, pp. 166-168, March 2006, doi: 10.1109/LED.2006.870247 View PDF
• Kuni Cherenack, I-Chun Cheng, Alex Kattamis, Ke Long, Sigurd Wagner, and James C. Sturm, "Optimization of SiNx barrier layers deposited at 250°C on a clear plastic substrate," presented at Mat. Res. Soc. Symp., L1.5, San Francisco, CA, USA, Apr 2006. View PDF
• Ke Long, I-Chun Cheng, Alex Kattamis, Helena Gleskova, Sigurd Wagner, and James C. Sturm, "Mechanical design of a-Si TFT's fabrication on high-temperature clear plastic substrate," presented at Mat. Res. Soc. Symp., A18.4, San Francisco, CA, USA, Apr 2006.
• Kun Yao, James Sturm, and Anthony Lochtefeld, "Strained Silicon Two-dimensional Electron Gases On Commercially Available Si_1-xGe_x Relaxed Graded Buffers," in SiGe and Ge: Materials, Processing, and Devices, ECS Transactions, Volume 3 Issue No. 7, pp. 313-315 (2006). View PDF
• R. L. Peterson and J. C. Sturm, “Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 254-255 (2006). View PDF
• W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker and J.T. Mayer, Conf. Digest of Third International Silicon-Germanium Technology and Device Meeting, “The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications” pp. S188-S190 (2006) View PDF
• K. Chung, J.C. Sturm, E. Sanchez, S. Kuppuroa, “High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 180-181 (2006). View PDF
• Kun Yao and James C Sturm, “Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer,” in Nanomanufacturing, Mater. Res. Soc. Symp. Proc. 921E, 0921-T02-08 (2006). View PDF
• Olgica Bakajin, Eric Fountain, Keith Morton, Stephen Y. Chou, James C. Sturm, “Materials aspects in micro- and nanofluidic systems applied to biology,” Materials Research Society Bulletin, 31, pp. 108-113 (2006) View PDF
• D. Inglis, R. Riehn, J.C. Sturm, and R.H. Austin, "Microfluidic high gradient magnetic cell separation," J. Appl. Phys. 99, Art. No. 08K101 (2006) View PDF
• J.C. Sturm, K. Chung, E. Sanchez, S. Kuppuroa, "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007. View PDF

2005

• K. Long, I.-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, “Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures”, Tech. Dig. 63rd Device Research Conf. pp. 141-142 (2005). View PDF
• H. Jin and J.C. Sturm, "Large-area wet micro-printing (LAMP) for organic device patterning," Mater. Res. Soc. Symp. Proc., vol. 871, pp. I6.27.1-I6.27.6 (2005) View PDF
• Troy Graves-Abe and J. C. Sturm, "Programmable conductance switching and negative differential resistance in nanoscale organic films" Mat. Res. Soc. Symp. Proc., vol. 871, pp. I9.34.1 - I9.34.6 (2005). View PDF
• K. Long, A. Kattamis, I.-C. Cheng, Y. C. Gao, H. Gleskova, S. Wagner, J. C. Sturm, “High temperature (250oC) amorphous-silicon TFT’s on clear plastic substrates”, SID’05 Tech. Dig., vol 36, pp. 313-315 (2005). View PDF
• S. Wagner, I-C. Cheng, K. Long, A. Kattamis and J.C. Sturm "Managing mechanical stress in flexible active-matrix backplanes," Proc. Internat. Display Manufacturing Conference 2005, Taipei, Taiwan, Feb.21-24, 2005, pp. 415-418. Society for Information Display, Taipei Chapter, 1001 T-Hsueh Rd., Hsin Chu, Taiwan. View PDF
• I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "Stress compensation for overlay registration in the fabrication of a-Si:H TFTs on organic polymer foil substrates," presented at USDC 4th Annual Flexible Display & Microelectronics Conference, 10.4, Phoenix, AZ, USA, Feb 2005. View PDF
• S. Wagner, R. Bhattacharya, I-C. Cheng, H. Gleskova, J. Jones, A. Kattamis, S. P. Lacour, K. Long, J. C. Sturm, C. Tsay, T. Li, and Z. Suo, "Flexible, conformal, and elastic electronic surfaces," presented at Mat. Res. Soc. Symp., H2.1, San Francisco, CA, USA, March 2005.
• A. Kattamis, I-C. Cheng, K. Long, J.C. Sturm, and S. Wagner, "Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates," Mat. Res. Soc. Symp. Proc., vol. 870, pp. H2.7,1 - H2.7.5 (2005) View PDF
• I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "SiNx stress control for overlay registration in a-Si:H TFTs on flexible foil substrates," presented at Mat. Res. Soc. Symp., A17.2, San Francisco, CA, USA, March 2005. View PDF
• A. Kattamis, I-C. Cheng, K. Long, J. C. Sturm, and S. Wagner, "Dimensionally stable processing of a-Si TFTs on polymer foils," presented at 47th Annual TMS Electronic Materials Conference, Santa Barbara, CA, X8, 2005.
• K. Long, I-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures," Dig. 63rd Device Research Conf., pp. 141-142, 2005. View PDF
• Alex Kattamis, Russell J. Holmes, I-Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, and Sigurd Wagner, "TFTs of nanocrystalline silicon fabricated on clear polymer foils for flexible AMOLED displays," presented at 21st International Conference on Amorphous and Nanocrystaline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.
• I-Chun Cheng, Ke Long, Alex Kattamis, James C. Sturm, and Sigurd Wagner, "Self-aligned a-Si:H thin-film transistors on clear plastic substrates," presented at 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.

2004

• H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, and S. Wagner, “Field-effect mobility of amorphous silicon thin film transistors under strain,” Journal of Non-Crystalline Solids 340, pp. 732-735 (2004). View PDF
• R.L. Peterson, H. Yin, and J.C. Sturm, "Island scaling effects on photoluminescence of strained SiGe/Si (100)," Mat. Res. Soc. Proc. Symp. vol 809, pp. B8.4.1-B8.4.6 (2004) View PDF
• M.S. Carroll and J.C. Sturm, “Boron diffusion and silicon self-interstitital recycling between SiGeC layers,” Mat. Res. Soc. Proc. Symp. vol 810, pp. C3.5.1-C3.5.6 (2004). View PDF
• H. Yin, K.D. Hobart, S.R. Shieh, R. L. Peterson, T.S. Duffy, and J.C. Sturm, "Interference-enhanced raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator," Mat. Res. Soc. Proc. Symp, vol. 809, pp. B3.6.1-B3.6.6 (2004). View PDF
• J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "Strain engineering in SiGe/Si-on-insulator structures using compliant substrate and stress balance approaches," 2nd International SiGe Technology and Device Meeting (ISTDM), pp. 29-30 (2004). View PDF
• K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, “Short-channel amorphous-silicon TFT’s on high-temperature clear plastic substrates,” Tech. Dig. Device Research Conf., pp. 89-90 (2004). View PDF
• R.L. Peterson, H. Yin, K.D. Hobart, T.S. Duffy, and J.C. Sturm, "Uniaxially-tensile strained ultra-thin silicon-on-insulator with up to 1.1% strain," Tech. Prog. 2004 Electronic Materials Conference, pp. 33-34 (2004). View PDF
• R.L. Peterson, K.D. Hobart, H. Yin and J.C. Sturm, "Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI," Proc. IEEE SOI Conference, pp. 39-41 (2004). View PDF
• J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "High-perfection approaches to Si-based devices through strained layer epitaxy," Proc. International Conference on Solid State Devices and Materials (SSDM), pp. 220-221 (2004). View PDF
• J.C. Sturm, S.P. Lacour, K.Long, P.I. Hsu, R. Bhattacharya, J. Jones, H. Gleskova, and S. Wagner, "Flexible and deformable electronic surfaces," Prog. Workshop on Frontiers in Electronics, p. 23 (2004). View PDF

2003

• X.-Z. Bo, L. P. Rokhinson, J. C. Sturm, "Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation," Proc. Symp. Mater. Res. Soc. vol.  737, pp. E14.5.1 - E,14,4,6 (2003) View PDF
• M. Wu, J.C. Sturm and S. Wagner, "Polycrystalline silicon thin film transistors for CMOS on flexible steel foil substrates, in Polycrystalline Semiconductors VII," Solid State Phenomena vol. 93, pp. 3-12 (2003) View PDF
• H. Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Relaxed SiGe layers with high Ge content by compliant substrates approaches," Proc. Symp. Mat. Res. Soc. vol. 768, pp. 15-19 (2003).  (Also published in vol. 765) View PDF
• X.-Z. Bo, L.P. Rokhinson, and J. C. Sturm, "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Heterostructures III, pp. 129-130 (2003) View PDF
• H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Strained-Si-on-Insulator MOSFETs without relaxed SiGe buffer layer," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Hetereostructures, pp. 181-183 (2003) View PDF
• X.-Z. Bo, L. P. Rokhinson, D. C. Tsui, and J. C. Sturm, "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth," Tech. Dig. Device Research Conference, pp.129-130 (2003) View PDF
• H. Yin, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Stress balance of Si/SiGe and SiO₂/SiGe islands on compliant substrates," Tech. Prog. Elec. Mater. Conf., pp. 38-39 (2003) View PDF
• L.R. Huang, J.C. Sturm, R.H. Austin, and E.C. Cox, "Enhanced Brownian ratchet array for DNA separation using flow angle effect, Proc. of \(\mu\)TAS 2003 (7^th Inter. Conf. on Micro Total Analysis Systems), pp. 1187-1190 (2003) View PDF
•  H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Fully-depleted strained-Si MOSFETs on insulator without SiGe buffers," Tech. Dig. International Electron Device Meeting (IEDM), pp. 53-56 (2003) View PDF
• (Plenary talk) J.C. Sturm, L.R. Huang, J.O. Tegenfeldt, H. Cao, S.Y. Chou, E.C. Cox, and R.H. Austin, "Nanofluidic devices for genomic analysis," Proc. 12th Internat. Workshop on the Physics of Semiconductor Devices (IWPSD-2003), K.N. Bhat and A. DasGupta, editors, Vol. 1, pp.51-56 (2003) View PDF
• E.J Stewart  and J.C. Sturm, "Segregation of boron to polycrystalline and single-crystal Si_1-xGe_x-yGe_xC_y and Si_1-yC_y Layers," Proc. First International SiGe Technology and Device Meeting, pp. 169-170, (2003) View PDF
• K.R. Sarma, et al, K. Long, H. Gleskova, S. Wagner, J. C. Sturm, "Active matrix OLED using 150 ^oC a-Si TFT backplane built on flexible plastic substrate," SPIE Proc. Vol. 5080, pp. 180-191 (2003) View PDF

2002

• X.Z. Bo, N. Yao, J.C. Sturm, "Large-grain polysilicon films with low intragranular defect density by low-temperature solid-phase crystallization," Mat. Res. Soc. Symp. Proc. 715, pp. A16.4.1 - A16.4.6 (2002). View PDF
• M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, and M. Berti, "Thermal stability and substitutional carbon incorporation far above solid-solubility in Si_1-xC_x and Si_1-x-yGe_xC_y layers grown by chemical vapor deposition using disilane," Mat. Res. Soc. Symp. Proc. 717, pp. C4.3.1 - C4.3.7 (2002). View PDF
• T. Graves-Abe, F. Pschentizka, J.C. Sturm. "Anomalous temperature dependence in solvent-enhanced dye diffusion in polymer films," Mat. Res. Soc. Symp. Proc., Vol. 725, P3.1.1 (2002). View PDF
• P.I. Hsu, H. Gleskova, R. Bhattacharya, Z. Xi, Z. Suo, S. Wagner, J.C. Sturm, "Thin film transistors on 3-D Shapes: electrical performance under mechanical strain," Mat. Res. Soc. Symp. G Materials for Flexible Elect. Disp. And Dev. (2002).
• P.I. Hsu, H. Gleskova,M. Huang, Z. Suo, S. Wagner, J.C. Sturm, "Amorphous Si TFTs on plastically deformed spherical domes," J. Non-crystalline Solids, vol. 299-302, pp. 1355-1359 (2002) View PDF
• H. Yin, R. Huang, K.D. Hobart., Z. Suo, S.R. Shieh, T. Duffy, and J.C. Sturm, "Prevention of buckling during SiGe relaxation on compliant substrates," Mat. Res. Soc. Symp. Proc. Spring (2002). 
• H. Yin, K.D. Hobart, R. Huang, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, and J.C. Sturm. "High Ge-content relaxed Si_1-xGe_x layers by relaxation on compliant substrate with controlled oxidation," Tech. Prog. Elec. Materials Conf., p. 8 (2002). View PDF
• L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin and E. Cox, "A microfabricated device for separating ~200 kilo-base-pair DNA molecules in ~ 15 seconds," MicroTAS pp. 51-53 (2002). View PDF
• L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin, and E.C. Cox, "A DNA Prism: Physical principles for optimizing a microfabricated DNA separation device, Tech. Dig. International Electron Device Meeting (IEDM), pp. 211-214 (2002) View PDF
• J.C. Sturm, H. Gleskova, T.N. Jackson, S.J. Fonash, and S. Wagner, "Enabling technologies for plastic displays," Proc. SPIE 4712, pp. 222-236 (2002). View PDF

2001

• H. Yin, J.C. Sturm, Z. Suo, R. Huang, K.D. Hobart, "Relaxation dynamics and electrical properties on SiGe islands on BPSG," Inter. Conf. on Alternative Substrate Technology, Lake Tahoe, CA, Jan. (2001). View PDF
• (Invited) J.C. Sturm, M.S. Carroll, M. Yang, E. Stewart, and J. Gray, "Point defect engineering for dopant dontrol in silicon-based nanodevices," Tech. Dig. New Group IV Semiconductors: Control of Properties and Applications to Ultrahigh speed and Optoelectronic Devices, pp. III-02-1 - III-02-4 (2001). View PDF
• E. Stewart, M. Carroll, and J.C. Sturm, "Threshold voltage stability of p-channel MOSFETs with heavily boron doped SiGeC gate layers," Proc. Electrochem. Soc. 2001-2, pp. 190-195 (2001). View PDF
• (Invited) J.C. Sturm, P.I. Hsu, M. Huang, H. Gleskova, S. Miller, A. Darhuber, S. Wagner, Z. Suo, and S. Troian, "Technologies for Large-Area Electronics on Deformable Substrates," Proc. Electrochemical Soc. 2001-2, pp. 506-517 (2001). View PDF
• M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Silicon interstitial driven loss of substitutional carbon from SiGeC structures," Mat. Res. Soc. Symp. Proc. 669, pp. J6.7.1-J6.7.6 (2001). View PDF
• D. De Salvador, E. Napolitani, A. Coati, M. Berti, A.V. Drigo, M. Carroll, J.C. Sturm, J. Stangl, G. Bauer, and L. Lazzarini, "Carbon diffusion and clustering in SiGeC layers under thermal oxidation," Mat. Res. Soc. Symp. Proc. 669, pp. J6.8.1-J6.8.6 (2001) View PDF
• E.J. Stewart, M.S. Carroll, and J.C. Sturm, "Boron segregation and electrical properties in polycrystalline SiGeC," Mat. Res. Soc. Symp. Proc. 669, pp. J6.9.1-J6.9.6 (2001). View PDF
• K. Long, M.H. Lu, F. Pschenitzka, and J.C. Sturm "Novel three-color polymer light-emitting devices for passive-matrix flat panel displays," Dig. 59th Device Research Conf. pp. 179-180 (2001). View PDF
• H. Yin, J.C. Sturm, Z. Suo, R. Huang, and K.D. Hobart, "Modeling of in-plane expansion and buckling of SiGe islands on BPSG," Tech. Prog. Elect. Mat. Conf. pp. 33, (2001). View PDF
• J.E. Gray, M. Yang, H. Yin, J.C. Sturm, "Growth and stabilization of sub-100-nm vertical n-channel MOSFET's," Tech. Prog. Elect. Mat. Conf. pp. 39 (2001). View PDF
• P.I. Hsu, H. Gleskova, Z. Suo, S. Wagner, and J.C. Sturm, "Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes," Tech. Dig. Device Research Conf, pp. 193-194 (2001) View PDF
• F. Pschenitzka, M.H. Lu, and J.C. Sturm, "Patterning of OLED cathodes by metal dry etching," Dig. Tech. Papers Int. Symp. Soc. Inf. Disp. pp. 731-734 (2001). View PDF
• (Invited) M.H. Lu and J.C. Sturm, "External coupling and cathode effects in organic light-emitting devices: modeling and experiments," Proc. SPIE vol. 4464, pp. 187--196 (2001). View PDF
• R. Huang, Z. Suo, H. Yin, and J. Sturm, "Relaxation of a strained elastic film on a viscous layer," Mat. Res. Soc. Symp. Proc. 695, pp. L3.14.1 - L3.14.6 (2001). View PDF
• (Invited) Y. Vlasov, X. Zheng Bo, J.C. Sturm, and D.J. Norris, "On-chip assembly of silicon photonic band gap crystals," Mat. Res. Soc. Symp. Proc. 707, xx-xx (2001). View PDF
• X.Z. Bo, L. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "SiGe nanostructures fabricated by atomic force microscopy oxidation," Mat. Res. Soc. Symp. Proc. 686, pp. A6.5.1 - A6.5.6 (2001). View PDF
• L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R.H. Austin, E.C. Cox, "Generation of large-area tunable uniform electric fields in microfluid arrays for rapid DNA separation," Tech. Dig. Int. Elect. Dev. Mtg., pp. 363-366 (2001). View PDF
• F. Pschenitzka, K. Long, and J.C. Sturm, "Solvent vapor-enhanced dye diffusion for full-color OLED fabrication," Mat. Res. Soc. Symp. Proc. 665, pp. C9.5.1 - C9.5.7 (2001). View PDF
• (Invited) S. Wagner, S.J. Fonash, T.N. Jackson, and J.C. Sturm, "Flexible display enabling technology," SPIE 4362, pp. 226-244 (2001). View PDF
• K. Long, F. Pschenitzka, and J. C. Sturm, “Three-color passive-matrix pixel array with dye-diffusion-patterned thin-film and a novel tri-layer structure”, Mat. Res. Soc. Symp. Proc. 708, pp. BB6.8.1-BB6.8.6 (2001). View PDF

2000

• M. Yang, and J.C. Sturm, "Doped vs. undoped Si_1-x-yGe_xC_y layers in sub-100 nm vertical p-channel MOSFETs," Thin Solid Films 369, pp. 366-370 (2000). View PDF
• M.S. Carroll, and J.C. Sturm, "Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon," Mat. Res. Soc. Symp. Proc. 610, pp. B4.10.1-B4.10.6 (2000). View PDF
• P.I. Hsu, M. Huang, S. Wagner, Z. Suo, and J.C. Sturm, "Plastic deformation of thin foil substrates with amorphous silicon islands into spherical shapes," Mat. Res. Soc. Symp. Proc. 621, pp. Q8.6.1-Q8.6.6 (2000). View PDF
• M.H. Lu, C.F. Madigan, and J.C. Sturm, "Experiment and modeling of conversion of substrate-wave-guided modes to surface-emitted light by substrate patterning," Mat. Res. Soc. Symp. Proc. 621, pp. Q3.7.1-Q3.7.6 (2000). View PDF
• C.F. Madigan, T.R. Hebner, J.C. Sturm, Richard A. Register, Sandra Troian, "Lateral dye distribution with ink-jet dye doping of polymer organic light emitting diodes," Mat. Res. Soc. Symp. Proc. 624, pp. 211-216 (2000). View PDF
• (Invited) J.C. Sturm, M.S. Carroll, M. Yang, J. Gray, and E. Stewart, "Mechanisms and applications of the control of dopant profiles in silicon using Si_1-x-yGe_xC_y layers grown by RTCVD," Proc. Electrochem Soc. 2000-9, pp. 309-320 (2000) View PDF
• F. Pschenitzka, and J.C. Sturm, "Patterned dye diffusion using transferred photoresist for polymer OLED displays," Proc. SPIE 4105, pp. 58-68 (2000). View PDF
• (Invited) J.C. Sturm, P.I. Hsu, S.M. Miller, H. Gleskova, A. Darhuber, M. Huang, S. Wagner, S. Troian, and Z. Suo, "Three-dimensional electronic surfaces," Mat. Res. Soc. Proc. 636, pp. D11.4.1-D11.4.12 (2000). View PDF
• M.-H. Lu, C.F. Madigan, and J.C. Sturm, "Improved external coupling efficiency in organic light-emitting devices on high-index substrates," Tech. Dig. Int. Elec. Dev. Mtg. pp. 607-610 (2000). View PDF

1999

• L. Montès, L. Tsebeskov, P.M. Fauchet, K. Pangal, J.C. Sturm and S. Wagner, "Optical analysis of plasma enhanced crystallization of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 536, pp. 505-510 (1999). View PDF
• K. Pangal, Y. Chen, J.C. Sturm, S. Wagner, "Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer," Mat. Res. Soc. Symp. Proc. 557, pp. 629-634 (1999). View PDF
• X. Jiang, R.A. Register, F. Pschenitzka, and J.C. Sturm, Kelly A. Killeen, Mark E. Thompson, "Doped organic light-emitting diodes based on random copolymer containing both hole and electron transport groups," Mat. Res. Soc. Symp. Proc. 558, pp. 433-438 (1999). View PDF
• R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G.Kane, R.G. Stewart, M.H. Lu, A. Ipri, J.C. Sturm, et al, "A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers," SID Symposium Digest 30, 438 (1999). View PDF
• M. Carroll, M. Yang, and J.C. Sturm, "Ultrasharp phosphorus profiles in silicon epitaxy by low temperature rapid thermal chemical vapor deposition," Ext. Abs. Electrochem. Soc, p. XX (1999), and published as "Suppressed phosphorus autodoping in silicon epitaxy for ultrasharp phosphorus profiles by low temperature rapid thermal chemical vapor deposition," in Advances in Rapid Thermal Processing, Electrochem Soc Proc. Vol, 99-10, pp. 319-326 (1999). View PDF
• (Invited) J.C. Sturm, T.R. Hebner, F. Pschenitzka, and M.H. Lu, "System constraints and printing for large-area organic light-emitting displays," Proc. Asia-Pacific Symp. on Organic Electroluminescent Materials and Devices, 8.1 (1999).
• (Invited) J.C. Sturm, M. Yang, and M.S. Carroll, "Doped and undoped SiGeC layers for dopant profile control in sub-100 nm vertical MOSFET's," Tech. Dig. Silicon Nanoelectronics Workshop, pp. 56-57 (1999) View PDF
• Y. Chen, K. Pangal, J.C. Sturm and S. Wagner, "P-channel thin film transistor of microcrystalline silicon directly deposited at 320 ^oC," Tech. Dig. IEEE Dev. Res. Conf., pp. 168-169 (1999). View PDF
• E. Stewart, M. Carroll, C.L. Chang, and J.C. Sturm, "Boron segregation in polycrystalline Si_1-x-yGe_xC_y alloys," Tech. Prog. Elec. Mat. Conf. pp. 18-19 (1999). View PDF
• (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Printing approaches for large-area color organic LED displays," Proc. SPIE 3797, pp. 266-274 (1999). View PDF
• M. Yang, M.S. Carroll, and J.C. Sturm, "Doped vs. undoped SiGeC layers in sub-100 nm vertical p-channel MOSFET's," Dig. of Int. Joint. Conf. on Silicon Epitaxy and Heterostructures, pp. I5-I6 (1999). View PDF
• M. Wu, Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "High-performance polysilicon thin film transistors on steel substrates," Proc. 18th Int. Conf. on Amorphous and Microcrystalline Semiconductors (1999), published in J. Non-Crystalline Solids, vol. 266-269, pp. 1284-1288 (2000). View PDF
• Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "P-channel microcrystalline silicon thin film transistor fabricated at 320 ^oC," Proc. 18th Int. Conf. Amorph. and Microcryst. Silicon (1999), publsihed in J. Non-Crystalline Solids, vol. 266-269, pp. 1274-1278 (2000) View PDF
• M. Wu, K. Pangal, J.C. Sturm and S. Wagner, "High temperature polycrystalline silicon thin film transistor on steel substrates," Tech. Dig. Int. Elec. Dev. Mtg., pp. 119-122, (1999). View PDF
• F. Pschenitzka and J. C Sturm, "Three-color doping of polymer OLEDs by masked dye diffusion," Mat. Res. Soc. Symp. Proc. 558, pp. 513-518 (1999). View PDF
• M.S. Carroll, J.C. Sturm, and C.L. Chang, "Quantitative measurement of reduction of phosphorus diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 568, pp. 186 (1999). View PDF
• (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Large-area printing technologies for full color OLED integration," Organic Light Emitting Materials - 99, Frontier Science Research Conf, La Jolla, CA, Nov. (1999).

1998

• M.S. Carroll, L.D. Lanzerotti, and J.C. Sturm, "Quantitative measurement of reduction of boron diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 527, pp. 417-422 (1998). View PDF
• K. Pangal, J.C. Sturm, and S. Wagner, "Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's," Tech. Dig. Int. Elec. Dev. Mtg. pp. 261-264 (1998). View PDF
• C.L. Chang, S.P. Shukla, W. Pan, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si_1-x-yGe_xC_y/Si(100) modulation doped heterstructures," Thin Solid Films 321, pp. 51-54 (1998). View PDF
• K. Pangal, J.C. Sturm and S. Wagner, "Effect of plasma treatment on crystallization behavior of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 507, pp. 577-582 (1998). View PDF
• (Invited) J.C. Sturm, M. Yang, C.L. Chang, and M.S. Carroll, "Novel applications of rapid thermal chemical vapor deposition for nanoscale MOSFET's," Mat. Res. Soc. Symp. Proc. 525, pp. 273-281 (1998). View PDF
• C.L. Chang and J.C. Sturm, "Polycrystalline Si_1-x-yGe_xC_y for suppression of boron penetration in PMOS structures," Mat. Res. Soc. Symp. Proc. 525, pp. 213-218 (1998). View PDF
• C.L. Chang, L.P. Rokhinson, and J.C. Sturm, "Direct optical measurement of the valence band offset of p⁺ Si_1-x-yGe_xC_y/p--Si(100) by heterojunction internal photoemission," Mat. Res. Soc. Symp. Proc. 533, pp. 245-250 (1998). View PDF
• R.M.A. Dawson, Z. Shen, M.H. Lu, J.C. Sturm et al, "Design of an improved pixel for a polysilicon active-matrix organic LED display," Dig. Soc. Info. Display Inter. Symp. pp. 11-14 (1998). View PDF
• K.A. Killeen, T.R. Hebner, F. Pschenitzka, M.H. Lu, M.E. Thompson, and J.C. Sturm, "Single-layer polymer blend organic light emitting diodes with electron transport polymers," Tech. Prog. Elec. Mat. Conf, pp.75 (1998). View PDF
• M.S. Carroll, C.L. Chang, J.C. Sturm, and T. Buyuklimanli, "Complete suppression of oxidation enhancement of boron diffusion using substitutional carbon incorporation," Tech. Prog. Elec. Mat. Conf. pp.14 (1998). View PDF
• M.H. Lu, E. Ma, J.C. Sturm, and S. Wagner, "Amorphous silicon TFT active-matrix OLED pixel," Proc. LEOS '98 1, pp. 130-131 (1998). View PDF
• (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, C.C. Wu, and W. Wilson, "Patterning approaches and system power efficiency consideration for organic LED displays," Proc. SPIE 3476, pp. 208-216 (1998). View PDF
• (Invited) J.C. Sturm. M. Yang, M.S. Carroll, and C.L. Chang, "Si_1-x-yGe_xC_y alloys: an enabling technology for scaled high performance silicon-based heterojunction devices," Proc. IEEE Silicon Monolithic Integrated Circuits in RF Systems, 1-2 (1998). View PDF
• R.M.A. Dawson, M.H. Lu, J.C. Sturm et al, "Impact of transient response of organic light emitting diodes on the design of active matrix OLED displays," Tech. Dig. Int. Elec. Dev. Mtg., pp. 875-878 (1998). View PDF

1997

• (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si_1-x-yGe_xC_y thin films and devices," Europe. Mat. Res. Soc. Symp. Proc. (1996), and Thin Solid Films 294, pp. 112-117 (1997). View PDF
• M. Carroll, L.L. Lanzerotti, C.C. Chang, and J.C. Sturm, "Silicon epitaxial regrowth in RTCVD for passivation of reactive ion-etched Si/SiGe/Si microstructures," Tech. Prog. Elect. Mater. Conf. pp. 16, (1997). View PDF
• S.J. Fonash, O. Awadelkarim, J.L. Crowley, T.N. Jackson, A. Kahn, J.C. Sturm, and S. Wagner, "Device technology for lightweight panoramic displays," Proc. SPIE, 3057, pp. 570-580 (1997). View PDF
• J.L. Crowley, O.O. Awadelkarim, S.J. Fonash, T.N. Jackson, A. Kahn, T.M. Peterson, J.C. Sturm and S. Wagner, "Industry/University teaming for display research," Proc. SPIE 3057, pp. 60-67 (1997). View PDF
• C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Organic LEDs integrated with a-Si TFTs on lightweight metal substrates," Digest of Technical Papers, SID International Symposium, pp. 67-70 (1997). View PDF
• D.L. Marcy, J.C. Sturm, M. Benes, and S. Chial, "3.3 \(\mu\)m pyrometry in single sided RTA from 400-700 ^oC using in-situ measurement of reflection and transmission," Mat. Res. Soc. Symp. Proc. 470, pp. 23-28 (1997). View PDF
• C.W. Liu, and J.C. Sturm, "The growth of ß-SiC on Si and poly-Si on ß-SiC by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 470, pp. 127-132 (1997). View PDF
• L.D. Lanzerotti, J.C. Sturm, E.A. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation," Mat. Res. Soc. Symp. Proc. 469, pp. 297-302 (1997). View PDF
• K. Pangal and J.C. Sturm, "Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation," 2nd Inter. Symp. on Plasma Process-Induced Damage, pp. 203-206 (1997). View PDF
• (Invited) J.C. Sturm, C.C. Wu, S.D. Theiss, and S. Wagner, "Doped-polymer organic light emitting diodes and OLED device integration," Tech. Dig. 12th International Miyazaki Symposium on Optical and Electrical Properties of Organic Materials, Fiber Society Japan, pp. S42-43 (1997). View PDF
• T.R. Hebner, C.C. Wu, D. Marcy, and J.C. Sturm, "Ink-jet printing of highly fluorescent molecularly doped polymers," Tech. Prog. Elec. Mater. Conf. pp. 3 (1997). View PDF
• D.L. Marcy and J.C. Sturm, "Teaching systems performance limitations through an integrated circuit fabrication laboratory," Proc. Amer. Soc. Eng'g. Education Annual Conf. (June 1997). View PDF
• (Invited) J.C. Sturm and C.C. Wu, "Integrated organic light emitting diode structures using doped polymers," Conf. Record 1997 Inter. Disp. Res. Conf, pp. F-11-F-18 (Sept. 1997). View PDF
• (Invited) J.C. Sturm, C.C. Wu, H.H. Lu, S.D. Theiss, E. Ma, and S. Wagner, "Processing and integration issues in organic light emitting displays," Proc. 1997 Inter. Semi. Dev. Res. Symp. pp. 417-420 (Dec. 1997). View PDF
• E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm, and S. Wagner, "Thin film transistors for foldable displays," Tech. Dig. Int. Elec. Dev. Mtg. pp. 535-538 (1997). View PDF
• C.L. Chang, S. Shukla, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si_1-x-yGe_xC_y/ (100) modulation doped heterostructures," Tech. Dig. 7th Inter. Symp. Silicon Molec. Beam Epitaxy, pp. 45-46 (1997). View PDF
• E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm and S. Wagner, "Organic light-emitting diode/thin film transistor integration for foldable displays," Conf. Rec. International Display Res. Conf., Toronto, Sept. 15-19, pp. L78-81 (1997). View PDF
• S.D. Theiss, C.C. Wu, M. Lu, J.C. Sturm and S. Wagner, "Flexible, lightweight steel-foil substrates for a-Si:H thin-film transistors," Mat. Res. Soc. Symp. Proc. 471, pp. 21-26 (1997). View PDF

1996

• (Invited) J.C. Sturm, A. St. Amour, and C.W. Liu, "Rapid thermal chemical vapor deposition of silicon-based heterostructures," Transient Thermal Processing Techniques in Electronic Materials, The Minerals, Metals, and Materials Society, pp. 11-16 (1996). View PDF
• J.C. Sturm and A. St. Amour, "Low temperature chemical vapor deposition of column-IV heterostructures," Ext. Abs. of Thirteenth International Conf. on Chemical Vapor Deposition, Electrochem. Soc. 96-1, (1996). View PDF
• C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Electron injection effects in electroluminescent devices using polymer blend thin films," Mat. Res. Soc. Symp. Proc. 424, pp. 489-494 (1996). View PDF
• H. Xu and J.C. Sturm, "Effects of reflective surfaces on silicon emissivity and temperature measurements," Mat. Res. Soc. Symp. Proc. 429, pp. 297-302 (1996). View PDF
• J.C. Sturm and A. Wolfe, "Breadth and unity: a revised electrical engineering curriculum at Princeton University," Proc. Amer. Soc. Eng'g. Educ. Conf. Washington, DC, (June 1996). View PDF
• K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Microelectromechanical charge sensing devices," Tech. Dig. Dev. Res. Conf. pp. 118-119 (1996). View PDF
• S. Madhavi, Venkataraman,C.W. Liu and J.C. Sturm, "High field drift velocity of 2 DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques," Tech. Dig. Dev. Res. Conf. pp. 26-27 (1996). View PDF
• C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Strong electroluminescence from molecularly doped polymers," Tech. Prog. Elec. Mat. Conf. pp. 15-16 (1996). View PDF
• M. Yang and J.C. Sturm, "Strain field effects on bandgap and band alignment in pseudomorphic zero- and one-dimensional structures," Tech. Prog. Elec. Mat. Conf. 72 (1996). View PDF
• C.C. Wu, S. Theiss, M.H. Lu, J.C. Sturm, and S. Wagner, "Integration of organic LED's and amorphous Si TFT's onto unbreakable metal foil substrates," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 957-959 (1996). View PDF
• L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 249-252 (1996). View PDF
• C.C. Chang, A. St. Amour, and J.C. Sturm, "Effect of carbon on the valence band offset of Si_{1- x- y}Ge_xC_y/Si heterojunction," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 257-260 (1996). View PDF

1995

• (Invited) J.C. Sturm, P.V. Schwartz, and Z. Lilienthal-Weber, "Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications," Physical and Technical Problems of SOI Structures and Devices, ed's J.P. Colinge, V.S. Lysenko, and A.N. Nazarov, NATO ASI Series, 3. High Technology 4, pp. 55-66 (1995). View PDF
• E. Chason, T.M. Mayer, Z. Matutinovic Krstelj, and J.C. Sturm, "Energy dispersive x-ray reflectivity characterization of semiconductor heterostructures and interfaces," Proceed. of NIST Semiconductor Characterization Workshop, Gaithersburg, MD. (Jan-Feb., 1995). View PDF
• (Invited) J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Luminescence in Si/strained Si_1-xGe_x heterostructures," Mat. Res. Soc. Symp. Proc. 379, pp. 387-398 (1995). View PDF
• C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 379, pp. 441-446 (1995). View PDF
•  H. Xu and J.C. Sturm, "Emissivity of rough silicon surfaces: measurement and calculations," Mat. Res. Soc. Symp. Proc. 387, pp. 29-34 (1995). View PDF
• J.C. Sturm and A. Reddy, "Low temperature (\(\geq\)400^oC) silicon pyrometry at 1.1 \(\mu\)m," Mat. Res. Soc. Symp. Proc. 387, pp. 137-142 (1995). View PDF
• St. Amour, J.C. Sturm, K. Brunner, J. Weber, L. Lacroix, and M.L.W. Thewalt, "Band-Edge photoluminescence in pseudomorphically strained Si1-x-_yGe_xC_y layers on Si(100) substrates," Tech. Prog. Elec. Mat.Conf. pp. A37-38 (1995). View PDF
• C.C. Wu, J. Tian, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescence from polymer blends of poly (3-n-butyl-p-phridyl vinylene) and poly (9-vinylcarbazole)," Tech. Prog. Elec. Mat. Conf., pp. A53 (1995). View PDF
• C.L. Chang, A. St. Amour, L.D. Lanzerotti, and J.C. Sturm, "Growth and electrical performance of heterojunction p⁺-Si_1-x-yGe_xC_y/p^--Si diodes," Mat. Res. Soc. Symp. Proc. 402, pp. 437-442 (1995). View PDF
• E. Cheng, J.C. Sturm, I.W. Wu, and T.J. King, "Modeling of leakage current distributions in series-connected polysilicon thin film transistors," Tech. Dig. Second Inter. Work. on Active Matrix LCD's, Lehigh University, pp. 102-105 (1995). View PDF
• C.C. Wu, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescent devices using polymer blend thin films," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 821-824 (1995). View PDF
• St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained Si_1-xGe_x/Si heterostructures," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 769-772 (1995). View PDF

1994

• J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and J.F. Bockman, "Silicide/SiGe schottky diode infrared detectors," Proc. SPIE Symposium on OE/Aerospace Sensing, pp. 393-403 (1994). View PDF
• J.C. Sturm, A. St. Amour, S.L. Clark, Y. Lacroix and M.L.W. Thewalt, "MBE-like deep photoluminescence in CVD Si/Si_1-xGe_x/Si quantum wells created by ion implantation and annealing," Tech. Prog. Elec. Mat. Conf. p. A13 (1994). View PDF
• C,W. Liu, A. St. Amour, and J.C. Sturm, "Low temperature chemical vapor deposition of SiGeC alloys on (100) Si substrates," Tech. Prog. Elec. Mat. Conf. p. A15 (1994). View PDF
• C.W. Liu, J.C. Sturm, Y.R.J. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and photoluminescence of strained <110> Si/Si1-x Gex/Si quantum wells grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 37-42 (1994). View PDF
• C.W. Cullen and J.C. Sturm, "Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries," Mat. Res. Soc. Symp. Proc. 342, pp. 23-28 (1994). View PDF
• A. St. Amour and J.C. Sturm, "Deposition of monolayer-scale germanium/silicon heterostructures by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 31-36 (1994). View PDF
• Z. Lilienthal-Weber, P.V. Schwartz, C.C. Wu, and J.C. Sturm, "Structure of oxygen-doped silicon grown by chemical vapor deposition at low temperature," J. Vac. Sci. Tech. B12, pp. 2511-2515 (1994). View PDF
• P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," Tech. Prog. Elect. Mat. Conf. pp. A29-A30 (1994). View PDF
• M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and metal-hydroxyquinoline compounds," Tech. Prog. Elec. Mat. Conf. p. A28 (1994). View PDF
• J.C. Sturm and P.V. Schwarrtz, "Epitaxial growth of silicon-based heterostructures by low temperature rapid thermal chemical vapor deposition," Proc. 2nd Int. RTP Conf.: RTP '94, (1994). View PDF
• M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register, and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and aluminum-tris (8 quinolate)," Polymer Preprints 35, (1994).
• J. Tian, M.E. Thompson, C.C. Wu, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Luminescent properties of conjugated poly(p-pyridyl-vinylene) and poly (p-pyridiniumvinylene)," Polymer Preprints 35, pp. 761 (1994).
• St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si_1-xGe_x/Si heterostructures by surface passivation," Abstracts of 25th IEEE Semiconductor Interface Specialists Conf. (1994). View PDF
• L. Lanzerotti, A. St. Amour, C.W. Liu, and J.C. Sturm, "Si/Si_1-x-y Ge_xC_y/Si heterojunction bipolar transistors," Tech. Dig. Int. Elec. Dev. Mtg. pp. 930-932. (1994). View PDF
• J.C. Sturm, P.V. Schwartz, Z Lilienthal-Weber, "Semi-insulating oxygen-doped crystalline silicon by low temperature CVD," NATO Advanced Research Workshop on Physical and Technical Problems of SOI structures and Devices, pp. 79-20 (1994)  View PDF

1993

• Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Evidence of phonon-absorption-assisted electron resonant tunneling in Si/Si_1-xGe_x diodes," J. Vac. Sci. Tech. B 11, pp. 1145-1148 (1993). View PDF
• V. Venkataraman, C.W. Liu, and J.C. Sturm, "High mobility electron gases and modulation doped field effect transistors fabricated in Si/Si_1-xGe_x by rapid thermal chemical vapor deposition," J. Vac. Sci. Tech. B 11, pp. 1176-1178 (1993). View PDF
• X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Modeling of parasitic barrier effects in silicide/Si_1-xGe_x schottky-barrier infrared detectors fabricated with a silicon sacrificial layer," J. Vac. Sci. Tech. B 11, pp. 1168-1171 (1993). View PDF
• T.A. Kennedy, E.R. Glaser, D.J. Godbey, P.E. Thompson, C.H. Chern, K.L. Wang, X. Xiao, and J.C. Sturm, "ODMR of sharp luminescence from Si/Si_1-xGe_x superlattices," J. Vac. Sci. Tech. B 11, pp. 1154-1158 (1993). View PDF
• (Invited) E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "Electrical characteristics of double-base Si/Si_1-xGe_x/Si heterojunction bipolar transistors," J. Vac. Sci. Tech. B 11, pp. 1193-1198 (1993). View PDF
• (Invited) J.C. Sturm, X. Xiao, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "Luminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 298, pp. 69-78 (1993). View PDF
• L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence of thin Si_1-xGe_x quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 79-84 (1993). View PDF
• T. Steiner, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Visible photoluminescence from Si_1-xGe_x quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 15-19 (1993). View PDF
• (Invited) J.C. Sturm, X. Xiao, Q. Mi, A. St. Amour, L.C. Lenchyshyn and M.L.W. Thewalt, "Opto-electronic applications of Si_1-xGe_x heterostructures," Tech. Dig. Int. Conf. Solid State Device and Materials, pp. 198-200 (1993). View PDF
• V. Higgs, E.C. Lightowlers, J.C. Sturm, X. Xiao, and P.J. Wright, "CL imaging of Si/Si_1-xGe_x/Si quantum wells grown by RTCVD," Proc. Microscopy of Semiconductor Materials 8, Oxford, UK, (1993). View PDF
• C.W. Liu and J.C. Sturm, "Growth of low-temperature cubic SiC on tilted and non-tilted (100) Si with 60-V breakdown ottky barriers," Proc. V^th Int. Conf. on Silicon Carbide and Related Materials, Inst. of Phys. Conf. Series Num. 137 (Inst. of Physics, London) pp. 83-36 (1993). View PDF
• J.C. Sturm, X. Xiao, Q. Mi, C.W. Liu, A. St. Amour, Z. Matutinovic-Krstelj, L.C. Lenchyshyn and M.L.W. Thewalt, "Photoluminescence and electroluminescence processes inSi_1-xGe_x/Si heterostructures grown by chemical vapor deposition," Mater. Sci. and Eng. B21, pp. 307-311 (1993). View PDF
• V. Venkataraman, C.W. Liu, J.C. Sturm, "Effect of alloy scattering on low-temperature mobilities of two-dimensional holes and electrons in Si/Si_1-xGe_x heterostructures," Tech. Prog. Elec. Mat. Conf. pp. A12 (1993). View PDF
• Z. Matutinovic-Krstelj, J.C. Sturm, and E. Chason, "Growth pressure effects on Si/Si_1-xGe_x chemical vapor deposition," Tech. Prog. Elec. Mat. Conf., 39, p. A39 (1993). View PDF
• C.W. Liu, J.C. Sturm, and E.A. Fitzgerald, "Structural and electrical characterization of low-temperature cubic SiC on (100) Si," Tech Prog. Elec. Mat. Conf. pp. A41 (1993). View PDF
• Z. Matutinovic-Krstelj, E.J. Prinz, V. Venkataraman, and J.C. Sturm, "A comprehensive study of lateral and vertical current transport in Si/Si_1-xGe_x/Si HBT's," Tech. Dig. Int. Elec. Dev. Mtg. pp. 87-90 (1993). View PDF
• J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Schottky barrrier heights of Pt and Ir silicides on SiGe," Mat. Res. Soc. Symp. Proc. 320, pp. 293 (1993). View PDF

1992

• J.C. Sturm, P.V. Schwartz, H. Manoharan, X. Xiao, and Q. Mi, "High lifetime strained Si_1-xGe_x films grown by rapid thermal chemical vapor deposition," Sensors and Actuators 33, pp. 29-32 (1992). View PDF
• (Invited) J.C. Sturm, X. Xiao, P.V. Schwartz, and C.W. Liu, "Band-edge exciton luminescence from Si/strained Si_1-xGe_x/Si structures," J. Vac. Sci. Tech. B 10, pp. 1998-2001 (1992). View PDF
• E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic," (abs.), Tech. Prog. Dev. Res. Conf., IIA-2 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2636 (1992). View PDF
• Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3-\(\mu\)m and 1.5-\(\mu\)m electroluminescence from Si/Si_1-xGe_x quantum wells," (abs.), Tech. Prog. Dev. Res. Conf., VIB-7 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2678 (1992). View PDF
• P.V. Schwartz, C.W. Liu, J.C. Sturm, T. Gong, and P.M. Fauchet, "Current transport properties of semi-insulating oxygen-doped films for use in high-speed photoconductive switches," Tech. Prog. Elec. Mat. Conf., pp. 49 (1992). View PDF
• X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Direct evidence by photoluminescence of type-I band alignment for strained Si_1-xGe_x (x\(\leq\) 0.35) on (100) silicon," Tech. Prog. Elec. Mat. Conf. pp. 22-23 (1992). View PDF
• X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, and S. Palfrey, "Silicide/Si_1-xGe_x schottky-barrier long-wavelength infrared detectors," Tech. Dig. Int. Elec. Dev. Mtg., pp. 125 (1992). View PDF
• P.V. Schwartz, J.C. Sturm, and C.W. Liu, "Oxygen-doped semi-insulating silicon grown by low-temperature rapid thermal chemical vapor deposition," Abstracts of 23rd IEEE Semiconductor Interface Specialists Conf. (1992).

1991

• J.C. Sturm, P. Prucnal, Y.-M. Liu, H. Manoharan, Q. Mi, P.V. Schwartz, and X. Xiao, "Applications of Si_1-xGe_x strained layer alloys for silicon-based optical interconnects," Proc. IEEE Sarnoff Symp. (1991). View PDF
• J.C. Sturm, Q. Mi, P.V. Schwartz, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, J.P. Noel, N. Rowell, and D.C. Houghton, "Band-edge exciton photoluminescence in strained silicon-germanium alloy films grown by rapid thermal chemical vapor deposition," Tech. Prog. Electronic Materials Conf., 58, pp. A37-A38 (1991). View PDF
• X. Xiao, K.K. Goel, J.C. Sturm, and P.V. Schwartz, "Data transmission at 1.3 \(\mu\)m using a silicon spatial light modulator," Proc. Symp. SPIE on Optical Technology for Microwave Applications, 1476, pp. 301-304, (1991). View PDF
• Z. Matutinovic-Krstelj, E.J. Prinz, P.V. Schwartz, and J.C. Sturm, "Reduction of p⁺-n⁺ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," Mat. Res. Soc. Symp. Proc. 220, pp. 445-450 (1991). View PDF
• V. Venkataraman and J.C. Sturm, "Single and double two-dimensional hole gases at Si/SiGe heterojunctions grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 391-396 (1991). View PDF
• J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence from strained Si_1-xGe_x layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 341-345 (1991). View PDF
• C.W. Liu, J.C. Sturm, P.V. Schwartz, and E.A. Fitzgerald, "Misfit dislocation nucleation mechanisms and metastability enhancement of selective Si_1-xGe_x grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 238, pp. 85-90 (1991). View PDF
• J.C. Sturm, Q. Mi, X. Xiao, and P.V. Schwartz, "Well-resolved band-edge photo- and electro-luminescence in strained Si_1-xGe_x quantum wells and superlattices," Proc. Int. Conf. on Solid State Devices and Materials, pp. 150-152 (1991). View PDF
• J.C. Sturm, P.M. Garone, and V. Venkataraman, "High hole mobility p-channel MOSFET's using MOS-gated Si/Si_1-xGe_x heterostructures," Proc. Int. Conf. on Solid State Devices and Materials, pp. 261-263 (1991). View PDF
• (Invited) J.C. Sturm, "Strained Si_1-xGe_x alloys for silicon-based heterojunction bipolar transistors," Tech. Dig. Government Microelectronics Applications Conf. 17, pp. 81-84 (1991). View PDF
• (Invited) J.C. Sturm, X. Xiao, Q. Mi, and H. Manoharan, "Optical properties of Si_1-xGe_x quantum wells and superlattices grown by rapid thermal chemical vapor deposition," Proc. Symp. SPIE on Rapid Thermal and Integrated Processing 1595, pp. 90-98, (1991). View PDF
• E.J. Prinz and J.C. Sturm, "Current-gain early-voltage products in graded-base Si/Si_1-xGe_x/Si heterojunction bipolar transistors," Tech. Prog. Dev. Res. Conf., pp. 38-39 (1991), and also in IEEE Trans. Elec. Dev. TED-38, pp. 2695-2696 (1991). View PDF
• J.C. Sturm and C.M. Reaves, "Physical modeling of non-invasive silicon temperature measurement by infrared absorption," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 895-898 (1991). View PDF
• E.J. Prinz and J.C. Sturm, "Analytical modeling and current gain-early voltage products in Si/Si_1-xGe_x/Si heterojunction bipolar transistors," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 853-856 (1991). View PDF
• P.M. Garone and J.C. Sturm, "Mobility enhancement and quantum mechanical modeling in Si_1-xGe_x channel MOSFET's from 90 to 300K," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 29-32 (1991). View PDF

1990

• J.C. Sturm, P.V. Schwartz, and P.M. Garone, "In-situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon," Journal Electronic Materials 19, pp. 1051-1054 (1990). View PDF
• J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications," Proc. Symp. on VLSI Tech. 10, pp. 107-119 (1990)  View PDF
• P.V. Schwartz, J.C. Sturm, and C.W. Magee, "Reduction of oxygen incorporation and lifetime measurements in epitaxial Si_1-xGe_x films grown by low temperature rapid thermal CVD," Tech. Prog. Elec. Mat. Conf. 19, pp. 19-20 (1990). View PDF
• J.C. Sturm and C.M. Reaves, "Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 309-315 (1990). View PDF
• J.C. Sturm, P.V. Schwartz, E.J. Prinz, and C. Magee, "Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 252-259 (1990). View PDF
• (Invited) J.C. Sturm, H. Manoharan, V. Venkataraman, P.V. Schwartz, and P.M Garone, "Control of individual layer growth temperatures by rapid temperature switching in Si_1-xGe_x multilayer structures grown by rapid thermal chemical vapor deposition," Proc. Inter. Conf. on Elec. Mat. pp. 457-464 (1990). View PDF
• (Invited) J.C. Sturm, P.M. Garone, E.J. Prinz, P.V. Schwartz, and V. Venkataraman, "Interface abruptness in epitaxial silicon and silicon-germanium structures grown by rapid thermal chemical vapor deposition," Proc. of the Eleventh Inter. Conf. on Chemical Vapor Deposition, pp. 295-306 (1990). View PDF
• X. Xiao, J.C. Sturm, P.V. Schwartz, and K.K. Goel, "Vertical 1.3 \(\mu\)m optical modulator in silicon-on-insulator," Proc. IEEE SOS/SOI Tech. Conf., pp. 171-172 (1990). View PDF
• (Invited) J.C. Sturm, E.J. Prinz, P.V. Schwartz, P.M. Garone, and Z. Matutinovic, "Growth and transistor applications of Si_1-xGe_x structures by rapid thermal chemical vapor deposition," Proc. First Topical Symp. on Silicon-Based Heterostructures, Amer. Vac. Soc., pp. 5-10 (1990). View PDF
• E.J. Prinz and J.C. Sturm, "Base transport in near-ideal graded-base Si/Si_1-xGe_x/Si heterojunction bipolar transistors from 150K to 370K," Inter. Electron Devices Mtg. Tech. Dig. pp. 975-978 (1990). View PDF
• P.M. Garone, V. Venkataraman, and J.C. Sturm, "Carrier confinement in MOS-Gated SiGe/Si quantum well structures," Inter. Electron Devices Mtg. Tech. Dig. pp. 383-386 (1990). View PDF

1989

• J.C. Sturm, X. Xiao, P.M. Garone, and P.V. Schwartz, "Electron-beam-induced-current (EBIC) imaging of defects in Si_1-xGe_x multilayer structures," Mat. Res. Soc. Symp. Proc. 148, pp. 341 (1989). View PDF
• P.M. Garone, P.V. Schwartz, and J.C. Sturm, "Growth rate and doping kinetics in silicon-germanium films grown by Limited Reaction Processing," Mat. Res. Soc. Symp. Proc. 146, pp. 41 (1989). View PDF
• J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Oxygen incorporation in low temperature (625-800 ^oC) silicon and silicon-germanium epitaxial layers grown by vapor-phase techniques in a non-UHV system," Tech. Prog. Elec. Mat. Conf 64 (1989). View PDF
• K. Tokunaga, J.C. Sturm, and J.P. Colinge, "Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's," Proc. IEEE SOS/SOI Tech. Conf., pp. 15-16 (1989). View PDF
• G,K. Celler, H-I. Cong, R.L. Field, W.S. Lindenberger, L.E. Trimble, and J. C. Sturm, "6.2 Ghz digital CMOS circuits in thin SIMOX films," Proc. IEEE SOS/SOI Tech. Conf., pp. 139-140 (1989). View PDF
• E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base-emitter spacers and strain-dependent densities of states in Si/Si_1-xGe_x/Si heterojunction bipolar transistors," Inter. Electron Devices Mtg. Tech. Dig., pp. 639-642 (1989). View PDF
• A. Kamgar, S.J. Hillenius, H.-I. Cong, R.L. Field, W.S. Lindenberger, G.K. Celler, L.E. Trimble, and J.C. Sturm, "Ultra-high speed CMOS circuits on thin SIMOX films," Inter. Electron Devices Mtg. Tech. Dig. pp. 829-832 (1989). View PDF
• P.V. Schwartz, J.C. Sturm, and P.M. Garone, "Extreme supersaturation of oxygen in low temperature epitaxial silicon and silicon-germanium alloys," Mat. Res. Soc. Symp. Proc. 163, pp. 591-596 (1989). View PDF
• J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Temperature measurement by infrared transmission for rapid thermal processing applications," Mat. Res. Soc. Symp. Proc. 157, pp. 401-406 (1989). View PDF

1988

• (Invited) J.C. Sturm, "Performance advantages of silicon-on-insulator for VLSI," Mat. Res. Soc. Symp. Proc. 107, pp. 295-308 (Pittsburgh, 1988). View PDF
• J.C. Sturm, K. Tokunaga, and J.P. Colinge, "Transconductance enhancement mechanisms in ultra-thin (<1000 Å) silicon-on-insulator MOSFET's," (abs.), Tech. Prog. Device Research Conf, 1988, also in IEEE Trans. Electron Dev. TED-35, pp. 2431-2432 (1988). View PDF
• J.C. Sturm, "Limited reaction processing and the growth of in-situ multi-layer structures," Ext. Abs. Electrochem. Soc. B88-1, pp. 102 (1988) View PDF
• (Invited) J.C. Sturm, "Increased transconductance in fully-depleted ultra-thin silicon-on-insulator MOSFET's," Proc. Of the 7th Future Electron Device Symposium, Tokyo, (November 1988). View PDF

1987

• J.F. Gibbons, C.M. Gronet, J.C. Sturm, et al., "Limited Reaction Processing," Mat. Res. Soc. Symp. Proc. 74, pp. 629-639 (Pittsburgh, 1987). View PDF

1986

• J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors and a merged 3-D vertical bipolar-MOS device in recrystallized polysilicon," Mat. Rec. Soc. Symp. Proc. 53, pp. 395-400 (North-Holland, New York, 1986). View PDF
• C.M. Gronet, J.C. Sturm, K.E. Williams, and J.F. Gibbons, "Limited reaction processing of silicon: oxidation and epitaxy," Mat. Res. Soc. Symp. Proc. 52, pp. 305-312 (North-Holland, 1986). View PDF
• C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, and J.F. Gibbons, "A seeded-channel approach to silicon-on-insulator technology," Mat. Res. Soc. Symp. Proc. 53, pp. 77-82 (North-Holland, New York, 1986). View PDF
• J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: situ epitaxial silicon-thin oxide-doped polysilicon layers for MOS transistors," Tech. Prog. Device Res. Conf., (1987)., also in IEEE Trans. Elec. Dev. TED-33, pp. 1847-1848 (1986). View PDF

1985

• J.C. Sturm and J.F. Gibbons, "A three-dimensional merged vertical bipolar-MOS device in recrystallized silicon," Tech. Prog. Device Res. Conf. (1985)., also in IEEE Trans. Elec. Dev. TED-32, pp. 2548 (1985). View PDF

1983

• T.J. Stultz, J.C. Sturm, and J.F. Gibbons, "Beam processing of silicon with a scanning cw Hg lamp," Mat. Res. Soc. Symp. Proc. 13, pp. 463-476 (North Holland, New York, 1983). View PDF
• J.F. Gibbons, M.D. Giles, J.C. Sturm, and J.T. Walker, "Circuit simulation of three-dimensional devices in beam-recrystallized polysilicon films," Proc. Inter. Conf. on Solid-State Devices and Materials (SSDM), Tokyo, Japan, (Aug. 1983). View PDF