2019
2018
2017
- Tiffany Moy, Liechao Huang, Warren Rieutort-Louis, Can Wu, Paul Cuff, Sigurd Wagner, James C. Sturm, and Naveen Verma, “An EEG Acquisition and Biomarker-Extraction System Using Low-Noise-Amplifier and Compressive-Sensing Circuits Based on Flexible, Thin-Film Electronics,” IEEE Journal of Solid-State Circuits, VOL. 52, NO. 1 (2017).
- Alexander H. Berg, Ken A. Nagamatsu, and James C. Sturm, “Extraction of Front- and Rear-Interface Recombination in Silicon Double-Heterojunction Solar Cells by Reverse Bias Transients,” IEEE Transactions on Electron Devices, VOL. 64, NO. 11 (2017).
- Ke-Chih Lin, Gonzalo Torga, Amy Wu, Joshua D Rabinowitz, Wesley J Murray, James C Sturm, Kenneth J Pienta and Robert Austin, “Epithelial and mesenchymal prostate cancer cell population dynamics on a complex drug landscape,” Converg. Sci. Phys. Oncol. 3 (2017) 045001.
- Josue Sanz-Robinson, Tiffany Moy, Liechao Huang, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, “Large-Area Electronics: A Platform for Next-Generation Human-Computer Interfaces,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, VOL. 7, NO. 1 (2017).
2016
- Warren Rieutort-Louis, Tiffany Moy, Zhuo Wang, Sigurd Wagner, James C. Sturm, and Naveen Verma, “A Large-Area Image Sensing and Detection System Based on Embedded Thin-Film Classifiers,” IEEE Journal of Solid-State Circuits, VOL. 51, NO. 1 (2016).
- Josue Sanz-Robinson, Liechao Huang, Tiffany Moy, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, “Large-Area Microphone Array for Audio Source Separation Based on a Hybrid Architecture Exploiting Thin-Film Electronics and CMOS,” IEEE Journal of Solid-State Circuits, VOL. 51, NO. 4 (2016).
- Curt I. Civin, Tony Ward, Alison M. Skelley, Khushroo Gandhi, Zendra Peilun Lee, Christopher R. Dosier, Joseph L. D’Silva, Yu Chen, MinJung Kim, James Moynihan, Xiaochun Chen, Lee Aurich, Sergei Gulnik, George C. Brittain, Diether J. Recktenwald, Robert H. Austin, James C. Sturm, “Automated Leukocyte Processing by Microfluidic Deterministic Lateral Displacement,” Cytometry Part A, 89A: pp. 1073-1083 (2016).
- Tiffany Moy, Warren Rieutort-Louis, Sigurd Wagner, James C. Sturm, and Naveen Verma, “A Thin-Film, Large-Area Sensing and Compression System for Image Detection,” IEEE Transactions on Circuits and Systems − I: Regular Papers, VOL. 63, NO. 11 (2016).
- Gabriel Man, Jeffrey Schwartz, James C. Sturm, and Antoine Kahn, "Electronically Passivated Hole-Blocking Titanium Dioxide/ Silicon Heterojunction for Hybrid Silicon Photovoltaics," Adv. Mater. Interfaces 2016, 3, 1600026.
- Branko Gliˇsi ́c, Yao Yao, Shue-Ting E. Tung, Sigurd Wagner, James C. Sturm, and Naveen Verma, "Strain Sensing Sheets forStructural Health MonitoringBased on Large-Area Electronicsand Integrated Circuits," Proceedings of the IEEE, Vol. 104 (8), pp. 1513-1528 (2016).
- Yasmin Afsar, Jenny Tang, Warren Rieutort-Louis, Liechao Huang, Yingzhe Hu, Josue Sanz-Robinson, Naveen Verma, Sigurd Wagner, and James C. Sturm, "Impact of bending on flexible metal oxide TFTs and oscillator circuits," Journal of the Society for Information Display 24/6, pp. 371-380 (2016).
- T. Liu, L.E. Aygun, S. Wagner, and J.C. Sturm, "Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part I: Two-Stage Model for Lifetime Prediction," IEEE Transactions on Device and Materials Reliability," Vol. 16, pp. 243-254 (2016).
- T. Liu, L.E. Aygun, S. Wagner, and J.C. Sturm, "Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence," IEEE Transactions on Device and Materials Reliability," Vol. 16, pp. 255-262 (2016).
2015
- Girija Sahasrabudhe, Sara M. Rupich, Janam Jhaveri, Alexander H. Berg, Ken A. Nagamatsu, Gabriel Man, Yves J. Chabal, Antoine Kahn, Sigurd Wagner, James C. Sturm, and Jeffrey Schwartz, “Low-Temperature Synthesis of a TiO2/Si Heterojunction,” J. Am. Chem. Soc. 2015, 137, pp. 14842−14845.
- A. Wu, Q.C. Zhang, G. Lambert, Z. Khin, R.A. Gatenby, H.J. Kim, N. Pourmand, K. Bussey, P.C.W. Davies, J.C. Sturm, R.H. Austin, "Ancient Hot and Cold Genes and Chemotherapy Resistance Emergence," Proceedings of the National Academy of Sciences of the United States of America, Vol. 112, pp. 10467-10472 (2015).
- B. Visweswaran, P. Mandlik, S.H. Mohan, J.A. Silvernail, R. Ma, J.C. Sturm and S. Wagner, "Diffusion of water into permeation barrier layers", J. Vac. Sci. Technol. A33(3), 031513-1 (MAY/JUN 2015).
- J. D'Silva, R.H. Austin and J.C. Sturm, "Inhibition of clot formation in deterministic lateral displacement arrays for processing large volumes of blood for rare cell capture", Lab Chip 2015, 10.1039/c4lc01409j (MAR 2015).
- J.A. Spechler, K.A. Nagamatsu, J.C. Sturm, and C.B. Arnold, "Improved Efficiency of Hybrid Organic Photovoltaics by Pulsed Laser Sintering of Silver Nanowire Network Transparent Electrode", ACS Applied Materials & Interfaces, Vol. 7 (19), pp. 10556-19552 (2015).
- K.A. Nagamatsu, S. Avasthi, G. Sahasrabudhe, G. Man, J. Jhaveri, A.H. Berg, J. Schwartz, A. Kahn, S. Wagner, and J.C. Sturm, "Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell", Appl. Phys. Lett. 106, 123906, (2015).
- L. Huang, W. Rieutort-Louis, A. Gualdino, L. Teagno, Y. Hu, J. Mouro, J. Sanz-Robinson, J.C. Sturm, S. Wagner, V. Chu, J.P. Conde, and N. Verma, "A System Based on Capacitive Interfacing of CMOS with Post-processed Thin-film MEMS Resonators Employing Synchronous Readout for Parasitic Nulling", J. Solid-State Circuits (JSSC), 50 (4), pp. 1002-1015 (APR 2015).
- N. Verma, Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz Robinson, T. Moy, B. Glisic, S. Wagner, J. Sturm, "Enabling Scalable Hybrid Systems: Architectures for Exploiting Large-Area Electronics in Applications," Proceedings of the IEEE, Vol. 103, No. 4 (APR 2015).
- W. Rieutort-Louis, J. Sanz-Robinson, T. Moy, L.C. Huang, Y.Z. Hu, Y. Afsar, J.C. Sturm, N. Verma, S. Wagner, "Integrating and Interfacing Flexible Electronics in Hybrid Large-Area Systems", IEEE Trans. Components Packaging & Manufacturing Tech. Vol. 5, pp. 1219-1229 (2015).
- Y. Chen, E.S. Abrams, T.C. Boles, J.N. Pedersen, H. Flyvbjerg, R.H. Austin, and J.C. Sturm, "Concentrating Genomic Length DNA in a Microfabricated Array", Phys. Rev. Lett. 114, 198303-5 (2015).
- Y. Chen, J. D'Silva, R.H. Austin, and J.C. Sturm, "Microfluidic chemical processing with on-chip washing by deterministic lateral displacement arrays with separator walls", Biomicrofluidics 9 (5), pp. 054015-10 (2015) doi.org/10.1063/1.4930863.
2014
- A. Wu, D. Liao, T. Tlsty, J.C. Sturm, R.H. Austin, "Game theory in the death galaxy: interaction of cancer and stromal cells in tumour microenvironment", Interface Focus 4, 20140028 (JUN 2014).
- C.-T. Huang, J.-Y. Li, K.S. Chou, J.C. Sturm, "Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer", Appl. Phys. Lett 104, 24, 243510 (JUN 2014).
- J. Sanz-Robinson, W. Rieutort-Louis, Y. Hu, L. Huang, N. Verma, S. Wagner, J.C. Sturm, "Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification", IEEE EDL, Vol 35, pp. 425-427 (APR 2014).
- J.C. Sturm, E.C. Cox, B. Comella, R.H. Austin, "Ratchets in hydrodynamic flow: more than waterwheels", Interface Focus 4 (5), Article UNSP 20140054 DOI: 10.1098/rsfs.2014.0054 (DEC 2014).
- K. Nagamatsu, S. Avasthi, J. Jhaveri, and J.C. Sturm, "A 12% Efficient Silicon/PEDOT:PSS Heterojunction Solar Cell Fabricated at < 100 C", J. Photovoltaics, Vol. 4, pp. 260-264 (JAN 2014).
- Q.Z. Zhang, J. Bos, G. Tarnopolskiy, J.C. Sturm, H. Kim, N. Pourmand, R.H. Austin, "You cannot tell a book by looking at the cover: Cryptic complexity in bacterial evolution", Biomicrofluidics 8 (5) Article 052004, DOI: 10.1063/1.4894410 (SEPT 2014).
- W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, and N. Verma, "A Complete Fully Thin-Film PV Harvesting and Power-Management System on Plastic With On-Sheet Battery Management and Wireless Power Delivery to Off-sheet Loads", J. Photovoltaics, Vol 4, pp. 432-439 (JAN 2014).
- Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, J.C. Sturm, S. Wagner, N. Verma, "A Self-Powered System for Large-Scale Strain Sensing by Combining CMOS ICs with Large-Area Electronics", J. Solid-State Circuits, Vol 49, pp. 838-840 (APR 2014).
- Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, L. Huang, B. Glisic, J.C. Sturm, S. Wagner, and N. Verma, "Large-Scale Sensing System Combining Large-Area Electronics and CMOS ICs for Structural-Health Monitoring", J. Solid-State Circuits, Vol 49, pp. 513-523 (FEB 2014).
2013
- A. Wu, K. Loutherback, G. Lambert, L. Estevez-Salmeron, T.D. Tlsty, R.H. Austin, and J.C. Sturm, "Cell motility and drug gradients in the emergence of resistance to chemotherapy", PNAS 110, pp. 16103-16108 (2013).
- C.-T. Huang, J.-Y. Li and J.C. Sturm, "Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K", IEEE Elec. Dev. Lett. EDL-34, pp. 21-23 (JAN 2013).
- J.-Y Li, C.-T Huang, L.P. Rokhinson, and J.C. Sturm, "Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition," Appl. Phys. Lett. 103, 162105 (2013).
- J.-Y. Li, and J.C. Sturm, "The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in p+-SiGe/n+-SiGe Junctions in Forward and Reverse Biases", IEEE T-ED 60, pp. 2479-2484 (2013) doi 10.1109/TED/2013.2267172.
- L.-Y. Liu, G. Duclos, B. Sun, J. Lee, A. Wu, Y. Kam, E.D. Sontag, H.A. Stone, J.C. Sturm, R.A. Gatenby and R.H. Austin, "Minimization of thermodynamic costs in cancer cell invasion", PNAS, 110 (5), pp. 1686-1691 (JAN 2013).
- N.T. Jafferis and J.C. Sturm, "Fundamental and Experimental Conditions for the Realization of Traveling-Wave-Induced Aerodynamic Propulsive Forces by Piezoelectrically Deformed Plastic Substrates", J. of Microelectromech. Syst. 22, (2), pp. 495-505 (APR 2013).
- S. Avasthi, W. McClain, G. Man, A. Kahn, J. Schwartz, and J.C. Sturm, "Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics", App. Phys. Lett. 102, 203090 (2013) http://dx.doi.org/10.1063/1.4803446.
2012
- N. Jafferis, J.C. Sturm, "Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions," J. Appl. Phys. 111, 064316 (2012).
- C. Payette, K. Wang, P.J. Koppinen, Y. Dovzhenko, J.C. Sturm, J.R. Petta, "Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures," Appl. Phys. Lett. 100, 043508-1-3 (2012)
- J.-Y. Li, C.-T. Huang, J.C. Sturm, "The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 101, 142112 (2012).
- K. Loutherback, J. D'Silva, L. Liu, A. Wu, R.H. Austin, and J.C. Sturm, "Deterministic separation of cancer cells from blood at 10 mL/min," AIP Advances 2, 042107-1-7 (2012).
2011
- L. Han, Y.F. Huang, J.C. Sturm, and S. Wagner, "Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film Transistors With a SiO2-Silicone Hybrid Gate Dielectric," IEEE Elect. Dev. Lett. EDL-32, pp. 36-38 JAN (2011).
- S. Avasthi, Y.B. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces," Surface Science 605, pp. 1308-1312 JUL (2011).
- Y. Huang, S. Wagner, J.C. Sturm, "Nonvolatile Amorphous-Silicon Thin-Film Transistor Structure for Drain-Voltage Independent Saturation Current," IEEE Trans. Elec. Dev. TED-58, pp. 2924-2927 (2011).
- N.T. Jafferis, H.A. Stone, J.C. Sturm, "Traveling wave-induced aerodynamic propulsive forces using piezoelectrically deformed substrates," Appl. Phys. Lett. 99, 114102-3 (2011).
- S. Avasthi, S. Lee, Y.-L. Loo, J.C. Sturm, "Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells," Advanced Materials 23, pp. 5762-5766 (2011)
2010
- H. Jin and J.C. Sturm, "Super-high-resolution transfer printing for full-color OLED display patterning," J. Soc. Information Display, pp. 141-145 (2010).
- E. Lausecker, Y. Huang, T. Fromherz, J.C. Sturm, S. Wagner, "Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication," Appl. Phys. Lett. 96, pp. 263501-3 (2010).
- S. Avasthi, Y. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Silicon surface passivation by an organic overlayer of 9, 10-phenanthrenequinone," Appl. Phys. Lett. 96, pp. 222109-3 (2010).
- L, Liu, K. Loutherback, D. Liao, D. Yeater, G. Lambert, G. Estevez-Torres, J.C. Sturm, R.H. Getzenberg, R.H. Austin, "A microfluidic device for continuous cancer cell culture and passage with hydrodynamic forces," Lab Chip 10, pp. 1807-1813 (2010).
- K. Morton, O.K. Tsui, C.K. Tung, J.C. Sturm, S.Y. Chou, R. Austin, "The anti-louts leaf effect in nanohydrodynamic bump arrays," New J. Phys. 12, pp. 085008-14 (2010).
- K. Loutherback, K.S. Chou, J. Newman, J. Puchalla, R.H. Austin, and J.C. Sturm, "Improved Performance of Deterministic Lateral Displacement Arrays with Triangular Posts," Microfluidics and Nanofluidics 9, pp. 1143-1149 (2010).
- K.H. Cherenack, B. Hekmatshoar, J.C. Sturm, and S. Wagner, "Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 C," IEEE Trans. Elec. Dev. TED-57, pp. 2381-2389 (2010).
- Y. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory," J. Soc. Info. Display 18, pp. 879-883 (2010).
2009
- K.H. Cherenack, A.Z. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, "Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 °C," J. Korean Phys. Soc. 54, pp. 415-420 (2009).
- K. Loutherback, J. Puchalla, R.H. Austin, J.C. Sturm, "Deterministic Microfluidic Ratchet," Phys. Rev. Lett. 102, pp. 045301-4 (2009).
- B. Hekmatshoar, S. Wagner and J.C. Sturm, "Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework," Appl. Phys. Lett. 95, pp. 143504-3 (2009).
2008
- D.W. Inglis, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin, J.C. Sturm, "Determining blood cell size using microfluidic hydrodynamics," J. Immuno. Methods 329, pp. 151-156 (2008).
- B. Hekmatshoar, A.Z. Kattamis, K.H. Cherenack, S. Wagner, and J.C. Sturm, "A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels", J. Soc. Inf. Display 16, pp. 183-188, (2008).
- B. Hekmatshoar, A.Z. Kattamis, K.H. Cheranack, K. Long, J.Z. Chen, S. wagner, J.C. Sturm, K. Raman, M. Hack, "Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic," IEEE Elec. Dev. Lett. EDL- 29, pp. 63-66 (2008).
- D.W. Inglis, K.J. Morton, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin and J.C. Sturm, "Microfluidic device for label-free measurement of platelet activation," Lab Chip 8, pp. 925-931 (2008).
- K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S.Y. Chou, and R.H. Austin, "Hydrodynamic metamaterials: Microfabricated arrays to steer, refract, and focus streams of biomaterials," Proc. Nat. Acad. Sci. 105, pp. 7434-7438 (2008).
- K.H. Chung, N. Yao, J. Benziger, J.C. Sturm, K.K. Singh, D. Carlson, and S. Kuppurao, "Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane," Appl. Phys. Lett. 92, pp. 113506-3 (2008).
- B. Hekmatshoar, K.H. Cherenack, A.Z. Kattamis, K. Long, S. Wagner, J.C. Sturm, "Highly stable amorphous-silicon thin-film transistors on clear plastic," Appl. Phys. Lett. 93, pp. 032103-3 (2008).
- Y.F. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Top-gate amorphous silicon TFT with self-aligned silicide source/drain and high mobility," IEEE Elec. Dev. Lett. EDL-29, pp. 737-739 (2008).
- K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S. Y. Chou and R. H. Austin, "Crossing Microfluidic Streamlines to Lyse, Label and Wash Cells" Lab Chip 8, pp. 1448-1453 (2008).
2007
- K.H. Chung, J.C. Sturm, E. Sanchez, K.K. Singh, S. Kuppurao, "The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neoplentasilane," Semiconductor Science and Technology 22, pp. 158-516 (2007).
- A. Kattamis, K.H.Cherenack, B. Hekmatshoar, L.C. Cheng, H. Gleskova, J.C. Sturm, and S. Wagner, "Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability," IEEE ELectron Dev. Lett, vol 28, 606-608 (20007)
- W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker, J.T. Mayer, "The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications," Semiconductor Science and Technology 22, pp. 188-190 (2007).
- K. Long, I.C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J.C. Sturm, "Amorphous-silicon thin-film transistors made at 280 oC on clear-plastic substrates by interfacial stress engineering," J. Soc. Info. Display 15, pp 167-176 (2007).
- A.Z. Kattamis, I.-C. Cheng, K. Long, B. Hekmatshoar, K.H. Cherenack, S. Wagner, J.C. Sturm, S.M. Venugopal, D.E. Loy, S.M. O'Rourke, and D.R. Allee, "Amorphous Silicon Thin-Film Transistor Backplanes Depositied at 200C on Clear Plastic for Lamination to Electrophoretic Displays," J. Display Technology 3, pp. 304-309, (2007).
- K.H. Cherenack, A.Z. Kattamis, B.Hekmatshoar, J.C. Sturm, and S. Wagner, "Amorphous-Silicon Thin-Film Transistors Fabricated at 300C on a Free-Standing Foil Substrate of Clear Plastic," IEEE Elec. Dev. Lett. EDL-28, pp. 1004-1006 (2007).
2006
- D.W. Inglis, J.A. Davis, R.H. Austin, J.C. Sturm, "Critical particle size for fractionation by deterministic lateral displacement," Lab Chip 6, pp. 655-658 (2006).
- I.C. Cheng, A.Z. Kattamis, K. Long, J.C. Sturm, S. Wagner, "Self-aligned amorphous-silicon TFTs on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 166-168 (2006).
- K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner. J.C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 oC to 280 oC," IEEE Elec. Dev. Lett. EDL-27, pp. 111-113 (2006).
- A.Z. Kattamis, R.J. Holmes, I.-C. Cheng, K. Long, J.C. Sturm, S.R. Forrest, S. Wagner, "High mobility nanocrystalline silicon transistors on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 49-51 (2006).
- R.L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, and J.C. Sturm, "Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates," J. Appl. Phys. 100, pp. 023537 (2006).
- R.L. Peterson, K.D. Hobart, H. Yin, F.J. Kub, and J.C. Sturm, "Reduced Buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate," J. Appl. Phys. 88, pp. 021913 (2006).
- R.L. Peterson, K.D. Hobart, F.J. Kub, and J.C. Sturm, "Comment on Fabrication of strained silicon on insulator by strain transfer process", Appl. Phys. Lett. 88, pp. 146101 (2006).
- K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J.C. Sturm, M. Stevenson, G. Yu, and M. O’Regan, “Active Matrix Amorphous-Silicon TFT Arrays at 180 oC on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays,” IEEE Trans. Elec. Dev. TED-53, pp. 1789-1796, (2006).
- X.-Z. Bo, L.P. Rokhinson, N. Yao, D.C. Tsui and J.C. Sturm, "SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth," J. of Appl. Phys. 100, pp. 094317 (2006).
- J.A. Davis, D.W. Inglis, K.J. Morton, D.A. Lawrence, L.R. Huang, S. Y. Chou, J.C. Sturm, and R.H. Austin, "Deterministic hydrodynamics: Taking blood apart," Proc. Nat. Acad. Sci. 103, pp. 14779 - 14784, (2006).
- R. Riehn, R.H. Austin, and J.C. Sturm, "A Nanofluidic Railroad Switch for DNA," Nano Letters 6, pp. 1973-1976 (2006).
- K. Long, F. Pschenitzka, M.-H. Lu, and J.C. Sturm, “Full-Color OLEDs Integrated by Dry Dye Printing,” IEEE Trans. Elec. Dev. TED-53, pp. 2250-2258 (2006).
- H. Gleskova, I-C. Cheng, S. Wagner, J.C. Sturm, Z.Suo,“Mechanics of thin-film electronics on flexible substrates,” Solar Energy 80, pp. 687-693 (2006).
- J.C. Sturm, P.-I. Hsu, H. Gleskova, R. Bhattacharya, and S. Wagner, “Deformable Electronic Surfaces,” International Journal of High Speed Electronics and Systems 16, pp. 365-374 (2006).
- O. Bakajin, E. Fountain, K. Morton, S.Y. Chou, J.C. Sturm, R.H. Austin, "Materials aspects in micro-and nanofluidic systems applied to biology," MRS Bulletin 31, pp. 108-113 (2006).
2005
- H. Yin, K.D. Hobart, R.L. Peterson, F.J. Kub, J.C. Sturm, "Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance," IEEE Trans. Elec. Dev. TED-52, pp. 2207-2214, (2005).
- H. Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Tunable uniaxial vs. biaxial in-plane strain using compliant substrates," Appl. Phys. Lett. 87, pp. 061922 - 3 (2005).
- T. Graves-Abe and J. C. Sturm, "Programmable organic thin-film devices with extremely high current densities," Appl. Phys. Lett. 87, pp. 133502-3 (2005).
- I.-C. Cheng, A. Kattamis, K. Long, J.C. Sturm, and S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, pp. 563 (2005).
- Y.M. Wang, J.O. Tegenfeldt, J. Sturm, R.H. Austin “Long-range interactions between transcription factors” Nanotechnology 16, pp. 1993-1999 (2005).
- Y.M. Wang , J.O. Tegenfeldt, W. Reisner, R. Riehn, X.J. Guan , L.I. Guo, I. Golding, E.C. Cox , J.C. Sturm, R.H. Austin, “Single-molecule studies of repressor-DNA interactions show long-range interactions” Proc. Nat. Acad. Sci. USA 28, pp. 9796-9801 (2005).
- E.J. Stewart, M.S. Carroll, J.C. Sturm, “Boron segregation in single-crystal Si1-x-yGexCy and Si1-yCy alloys,” J. Electrochem. Soc. 152, pp. 500-505 (2005).
- W. Reisner, K.J. Morton, R. Riehn, Y.M. Wang, Z.N. Yu, M. Rosen, J.C. Sturm, S.Y. Chou, E. Frey, R.H. Austin, “Statics and dynamics of single DNA molecules confined in nanochannels,” Phys. Rev. Lett. 94, pp. 196101 (2005).
2004
- H. Gleskova, P.-I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, S. Wagner, "Field-effect mobility of amorphous silicon thin-film transistors under strain," Non-Crystalline Solids 338, pp. 732-735 (2004).
- L.R. Huang, E.C. Cox, R.H. Austin, J.C. Sturm, "Continuous particle separation through deterministic lateral displacement," Science 304, pp. 987-990 (2004).
- H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation," Appl. Phys. Lett. 84, pp. 3624-3626 (2004).
- E.J. Stewart, M.S. Carrol, J.C. Sturm, "Boron segregation and electrical properties in polycrystalline Si1-x-yGexCy and Si1-yCy alloys," J. Appl. Phys. 95, pp. 4029-4035 (2004).
- J.O. Tegenfeldt, C. Prinz, H. Cao, R.L. Huang, R.H. Austin, S.Y. Chou E.C. Cox, J.C. Sturm, "Micro- and nanofluidics for DNA analysis," Analytical and Bioanalyical Chem. 378, pp. 1678-1692 (2004).
- P.-I. Hsu, M. Huang, H. Gleskova, Z. Xi, Z. Suo, S. Wagner and J.C. Sturm, "Effects of mechanical strain on TFTs on spherical domes," IEEE Trans. Elec. Dev. TED-51, pp.371-377 (2004).
- E.J. Stewart, J.C. Sturm, "Segregation of boron to polycrystalline and single-crystal Si1-x-yGexCy and Si1-yCy layers," App. Surface Science 224, pp.87-90 (2004).
- P.-I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, J.C. Sturm, "Spherical deformation of compliant substrates with semiconductor device islands," J. Appl. Phys. 95, pp.705-712 (2004).
- J. Tegenfeldt, C. Prinz, H. Cao, S. Chou, W. Reisner, R. Riehn, Y.M. Wang, E. Cox, J.C. Sturm, P. Silberzan, R.H. Austin, "The dynamics of genomic-length DNA molecules in nm channels," Proc. Nat. Acad. Sci. 101, pp. 10979-10983, (2004).
- S. Wagner, S.P. Lacour, J. Jones, P.-I. Hsu, J.C. Sturm, T. Li, Z. Suo, "Electronic Skin: architecture and components," Physica E 25, pp. 326-344, (2004).
- T. Graves-Abe, F. Pschenitzka, H. Z. Jin, B. Bollman, J. C. Sturm and R. A. Register, "Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application," J. Appl. Phys. 95, pp. 7154-7163 (2004).
- T. Graves-Abe, Z. Bao, and J.C. Sturm, "Self-aligned, insulating-layer structure for integrated fabrication of organic self-assembled multilayer electronic devices," Nano Letters 4, pp. 2489-2492 (2004).
- D.W. Inglis, R. Riehn, R.H. Austin, J.C. Sturm, "Continuous Microfluidic Immunomagnetic Cell Separation," Appl. Phys. Lett. 85, pp. 593-595 (2004).
2003
- H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates," Appl. Phys. Lett. 82, pp. 3853-3855 (2003).
- H. Yin, R. Huang, K.D. Hobart, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Buckling suppression of SiGe islands on compliant substrates," J. App. Phys. 94, pp. 6875 (2003).
- L.R. Huang; E.C. Cox, R.H. Austin, J.C. Sturm, "Tilted Brownian Ratchet for DNA Analysis," Anal. Chem. 75, pp. 6963-6967 (2003).
- W.L. Li, J.O. Tegenfeldt L. Chen, R.H. Austin, S.Y. Chou, P.A. Kohl, J. Krotine, J.C. Sturm, "Sacrificial polymers for nanofluidic channels in biological applications," Nanotechnology 14, pp. 578-583 (2003).
2002
- M.H. Lu and J.C. Sturm, "Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment," J. Appl. Phys. 91, pp. 595-604 (2002).
- H. Yin, R. Huang, K.D. Hobart, Z. Suo, T.S. Kuan, C.K. Inoki, S.R. Shieh, T.S. Duffy, F.J. Kub, J.C. Sturm, "Strain relaxation of SiGe islands on compliant oxide," J. Appl. Phys. 91, pp. 9716-9722 (2002).
- X. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, T.R. Hebner, J.C. Sturm, "Effect of carbazole-oxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes," J. Appl. Phys. 91, pp. 6717-6724 (2002).
- X.Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide," J. Appl. Phys. 91, pp. 2910-2915 (2002).
- X.Z. Bo, N. Yao, S. Wagner, and J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002).
- J. Liang, R. Huang, H. Yin, J.C. Sturm, K.D. Hobart, and Z. Suo, "Relaxation of compressed elastic islands on a viscous layer," Acta Materialia 50, pp. 2933-2944 (2002).
- P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002).
- L.R. Huang, P. Silberzan, J.O. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, and H. Craighead, "Role of molecular size in ratchet fractionation," Phys. Rev. Let. 89, pp. 178301 (2002).
- R.H. Austin, N. Darnton, R. Huang, J.C. Sturm, O. Bakajin, and T. Duke, "Ratchets: the problem with boundary conditions in insulating fluids," Appl. Phys. A 75, pp. 279-284 (2002).
- L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R. H. Austin, and E. C. Cox, "A DNA prism for high-speed continuous fractionation of large DNA molecules," Nature Biotechnology, 20, pp. 1048-1051 (2002).
- X.Z. Bo, L.P. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation," Appl. Phys. Lett. 81, pp. 3263-3265 (2002).
- M. Wu, X.Z. Bo, J.C. Sturm, S. Wagner, "Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates," IEEE Trans. Elec. Dev. TED-49, pp. 1993-2000 (2002).
- C.Prinz, J.O. Tegenfeldt, R.H. Austin, E.C. Cox, J.C. Sturm, "Bacterial chromosome extraction and isolation," Lab Chip, 2, pp. 207-212 (2002).
- M.S. Carroll and J.C. Sturm, "The quantification of substitutional carbon loss from Si0.998 C0.002 due to silicon self-interstitial injection during oxidation," Appl. Phys. Lett. 81, pp. 1225-1227 (2002).
- P.I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, and J.C. Sturm, "Amorphous Si TFTs on plastically-deformed spherical domes," 19th Int. Conf. On Amorphous & Microcrystalline Semiconductors, J. Non-Crystalline Solids. 299-302 pp. 1355-1359 (2002).
- D. De Salvador, A. Coati, E. Napolitani, M. Berti, A.V.Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, L. Lazzarini. "Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection," Appl. Phys. A 75, pp. 667-672 (2002).
- E. Napolitani, D. De Salvador, A. Coati, M. Berti, A.V. Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, C. Spinella. "Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation," Nuclear Instruments and Methods in Physics Research B 186, pp. 212-217 (2002).
- X.Z. Bo, N. Yao, S. Wagner, J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002).
- S. Wagner, E. Bonderover, W. Jordan, J.C. Sturm, "Electrotextiles: Concepts and challenges," Int. J. of High Speed Electronics and Systems. 12, pp. 391-399 (2002).
2001
- K. Pangal, J.C. Sturm, and S. Wagner, "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer on the same substrate," IEEE Trans. Electron Dev. TED-48, pp. 707-714 (2001).
- F. Pschenitzka and J.C. Sturm, "Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes," Appl. Phys. Lett. 78, pp. 2584-2586 (2001).
- M.H. Lu, J.C. Sturm "External coupling efficiency in planar organic light-emitting devices," Appl. Phys. Lett. 78, pp. 1927-1929 (2001).
- M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Diffusion enhanced carbon loss from SiGeC layers due to oxidation," Phys. Rev. B 64, pp. 073308-4 (2001).
- M.S. Carroll, J.C. Sturm, and T. Buyuklimanli, "Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation," Phys. Rev. B 64, pp. 085316-7 (2001).
- N. Darnton, O. Bakajin, R. Huang, B. North, O.J. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, "Hydrodynamics in 2-1/2 dimensions: making jets in a plane," J Phys. Condens. Mat. 13, pp. 4891-4902 (2001).
- Y.A. Vlasov, X.Z. Bo, J.C. Sturm, D.J. Norris, "On-chip natural assembly of silicon photonic bandgap crystals," Nature 414, pp. 289-293 (2001).
- F. Pschenitzka, and J.C. Sturm. "Excitation mechanisms in dye-doped organic light-emitting devices," Appl. Phys. Lett. 79, pp. 4354-4356 (2001).
- E. Stewart and J.C. Sturm, "Suppression of boron penetration in p-channel MOSFETs using polycrystalline SiGeC gate layers," IEEE Elec. Dev. Lett. EDL-22, pp. 574-576 (2001).
2000
- C. Madigan, M.H. Lu, and J.C. Sturm, "Improvement of output coupling efficiency of organic light-emitting diodes by substrate modification," Appl. Phys. Lett. 76, pp. 1650-1652 (2000).
- M.S. Carroll, J.C. Sturm, and M. Yang, "Low-temperature preparation of oxygen-and carbon-free silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 4652-4659 (2000).
- X.Z. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, and J.C. Sturm, "Statistical copolymers with side-chain hole and electron transport groups for single-layer electroluminescent device applications," Chem. Mater. 12, pp. 2542-2549 (2000).
- M. Yang, M. Carroll, J.C. Sturm, and T. Buyuklimanli, "Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 3541-3545 (2000).
- K. Pangal, J.C. Sturm, S. Wagner, and N. Yao, "Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization," IEEE Trans. Electron Dev. TED-47, pp. 1599-1607 (2000).
- S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, "Low-and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: effect of phonon confinement in germanium quantum wells," Phys. Rev. B 61, pp. 16807-16818 (2000).
1999
- M. Yang, C.L. Chang, M. Carroll, and J.C. Sturm, "25nm p-channel vertical MOSFET's with SiGeC source-drains," IEEE Elec. Dev. Lett. EDL-20, pp. 301-303 (1999).
- K. Pangal, J.C. Sturm, S. Wagner, and T.H. Büyüklimanli, "Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films," J. Appl. Phys. 85, pp. 1900-1906 (1999).
- C.W. Liu, M.Y. Chem, C.L. Chang and J.C. Sturm, "Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition," J. Appl. Phys. 85, pp. 2124-2128 (1999).
- F. Pschenitzka and J.C. Sturm, "Three-color organic light-emitting diodes patterned by masked dye diffusion," Appl. Phys. Lett. 74, pp. 1913-1915 (1999).
- C.L. Chang and J.C. Sturm, "Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal - oxide - semiconductor structures," Appl. Phys. Lett. 74, pp. 2501-2503 (1999).
- K. Pangal, J.C. Sturm, and S. Wagner, "Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon," Appl. Phys. Lett. 75, pp. 2091-2093 (1999).
- M. Wu, K. Pangal, J.C. Sturm, and S. Wagner, "High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates," Appl. Phys. Lett. 75, pp. 2244-2246 (1999).
1998
- M.S. Carroll, C.L. Chang, and J.C. Sturm "Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation," Appl. Phys. Lett. 73, pp. 3695-3697 (1998).
- T.R. Hebner, C.C. Wu, D. Marcy, M.H. Lu, and J.C. Sturm, "Ink-jet printing of doped polymers for organic light emitting devices," Appl. Phys. Lett. 72, pp. 519-521 (1998).
- (Invited) J.C. Sturm, "Advanced column-IV epitaxial materials for silicon-based optoelectronics," Bull. Mat. Res. Soc. pp. 60-64 (April 1998).
- T.R. Hebner and J.C. Sturm, "Local tuning of organic light-emitting diode color by dye droplet application," Appl. Phys. Lett. 73, pp. 1775-1777 (1998).
- (Invited) J.C. Sturm, W. Wilson, and M. Iodice, "Thermal effects and scaling in organic light-emitting flat-panel displays," IEEE J. of Selected Topics in Quantum Electronics 4, pp. 75-82 (1998).
- C.L. Chang, L.P. Rokhinson, J.C. Sturm, "Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p- Si (100) by heterojunction internal photoemission," Appl. Phys. Lett. 73, pp. 3568-3570 (1998).
1997
- C.C. Wu, J.C. Sturm, R.A. Register, J. Tian, E.P. Dona, and M.E. Thompson, "Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar transport abilities," IEEE Trans. Elec. Dev. TED-44, pp. 1269-1281 (1997).
- C.W. Liu and J.C. Sturm, "Low-temperature CVD growth of \(\beta\)-SiC on (100) Si using methylsilane and device characteristics," J. Appl. Phys. 82, pp. 4558-4565 (1997).
- M. Yang, J. C. Sturm, and J. Prevost, "Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures," Phys. Rev. B 56, pp. 1973-1980 (1997).
- C.C. Wu, C.I. Wu, J.C. Sturm, and A. Kahn, "Surface modification of indium tin oxide by plasma treatment: an effective method to improve the efficiency, brightness and reliability of organic light emitting devices," Appl. Phys. Lett. 70, pp. 1348-1350 (1997).
- R.A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, and J.C. Sturm, "Co silicide formation on SiGeC/Si and SiGe/Si layers," Appl. Phys. Lett. 70, pp. 1266-1268 (1997).
- L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation," Appl. Phys. Lett. 70, pp. 3125-3126 (1997).
- C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Integration of organic LEDs and amorphous Si TFT's onto flexible and lightweight metal foil substrates," IEEE Elec. Dev. Lett. EDL-18, pp. 609-611 (1997).
- (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si1-x-yGexCy thin films and devices," Thin Solid Films 294, pp. 112-117 (1997).
- C.L. Chang, A. St. Amour, and J.C. Sturm, "The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions," Appl. Phys. Lett. 70, pp. 1557-1559 (1997).
1996
- Z. Matutinovic-Krstelj, V. Venkataraman, E.J. Prinz, J.C. Sturm, and C.W. Magee, "Base resistance and effective bandgap reduction in npn Si/Si1-xGex/Si HBT's with heavy base doping," IEEE Trans. Elec. Dev. TED-43, pp. 457-466 (1996).
- L.D. Lanzerotti, A. St. Amour, C.W. Liu, J.C. Sturm, J.K. Watanabe, and N.D. Theodore, " Si/Si1-x-yGexCy/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-71, pp. 334-337 (1996).
- K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Nonivasive measurement of charging in plasmas using microelectromechanical charge sensing devices," Appl. Phys. Lett. 69, pp. 1471-1473 (1996).
- C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, J.L.W. Thewalt, C.W. Magee, and D. Eaglesham, "Growth and photoluminescence of high quality SiGeC random alloys of silicon substrates," J. Appl. Phys. 80, pp. 3043-3047 (1996).
- C.C. Wu, J.C. Sturm, and R.A. Register, "Integrated three-color organic light-emitting devices," Appl. Phys. Lett. 69, pp. 3117-3119 (1996).
1995
- Z. Matutinovic-Krstelj, E. Chason, and J.C. Sturm, "Growth pressure effects on Si/Si1-xGe chemical vapor deposition," J. Elec. Mat. 24, pp. 725-730 (1995).
- C.C. Wu, J.K.M. Chun, P.E. Burrows, J.C. Sturm, M.E. Thompson, S.R. Forrest, and R.A. Register, "Poly(P-phenylene vinylene)/tris (8-hydroxy)quinoline aluminum heterostructure light emitting diode," Appl. Phys. Lett. 66, pp. 653-655 (1995).
- J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Electroluminescent properties of self-assembled polymer thin films," Advanced Materials 7, pp. 395-398 (1995).
- J.R. Jimenez, X. Xiao, J.C. Sturm, and P.W. Pellegrini, "Tunable long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors," Appl. Phys. Lett. 67, pp. 506-608 (1995).
- J.C. Sturm, I.-W. Wu, and M. Hack, "Leakage current modeling of series-connected thin film transistors," IEEE Trans. Elec. Dev. TED-42, pp. 1561-1563 (1995).
- C.W. Cullen and J.C. Sturm, "Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission," IEEE Trans. Semicond. Manufact. 8, pp. 346-351 (1995).
- (Invited) A. St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of photoluminescence in strained-Si1-xGex/Si heterostructures," J. Materials Science: Materials in Electronics 6, pp. 350-355 (1995).
- A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence and bandgap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si(100)," Appl. Phys. Lett. 67, pp. 3915 (1995).
- A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Erratum: "Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)," [Appl. Phys. Lett. 67, 3915 (1995)]" Appl. Phys. Lett. 68, p. 1169 (1996).
- J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, and R.A. Register, "Photophysical properties, self-assembled thin films and light-emitting diodes of poly(p-pyridylvinylene)'s and poly(p-pyridinium vinylene)'s," Chemistry of Materials 7, pp. 2190-2198 (1995).
1994
- J.C. Sturm, A. St. Amour, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "High temperature (77 - 300K) photo- and electro-luminescence in Si1-xGex heterostructures," Jap. J. Appl. Phys. 33, pp. 2329-2334 (1994).
- J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Pt and Ir silicides on SiGe for infrared detectors," J. Appl. Phys. 75, pp. 5160-5164 (1994).
- P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," J. Electrochem. Soc. 141, pp. 1284-1290 (1994).
- V. Higgs, E.C. Lightowlers, X. Xiao, and J.C. Sturm, "Characterization of Si/Si1-xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy," Appl. Phys. Lett. 64, pp. 607-609 (1994).
- J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Deep photoluminescence in Si/Si1-xGex/Si quantum wells created by ion implantation and annealing," Appl. Phys. Lett. 64, pp. 2291-2293 (1994).
- C.W. Liu, J.C. Sturm, Y. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and bandgap of strained <110> Si1-xGex layers on silicon substrates by chemical vapor deposition," Appl. Phys. Lett. 65, pp. 76-78 (1994).
- A. St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation," Appl. Phys. Lett. 65, pp. 3344-3346 (1994).
- Y.M. Liu, X. Xiao, J.C. Sturm, and P.R. Prucnal, "All optical switching in an asymmetric silicon Fabry-Perot etalon based on the free-carrier plasma effect," Applied Optics 33, pp. 3871-3874 (1994).
1993
- L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High quantum efficiency photoluminescence spectroscopy of localized excitons in Si1-xGex" J. Elec. Mat. 22, pp. 223 (1993).
- Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Symmetric Si/Si1-xGex electron resonant tunneling diodes with an anomalous temperature behavior," Appl. Phys. Lett. 62, pp. 603-605 (1993).
- L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, and X. Xiao, "Photoluminescence study of vertical transport in Si1-xGex/Si heterostructures," Phys. Rev. 47, pp. 16,659-16,662 (1993).
- L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence mechanisms in thin Si1-xGex quantum wells," Phys. Rev. B 47, pp. 16,655-16,658 (1993).
- P.V. Schwartz, C.W. Liu, and J.C. Sturm, "Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition," Appl. Phys. Lett. 62, pp. 1103-1105 (1993).
- X. Xiao, J.C. Sturm, S.J. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Silicide/strained Si1-xGex schottky-barrier infrared detectors," IEEE Elec. Dev. Lett. EDL-14, pp. 199-201 (1993).
- V. Venkataraman, C.W. Liu, and J.C. Sturm, "Alloy-scattering limited transport of two-dimensional carriers in strained Si1-xGex quantum wells," Appl. Phys. Lett. 63, pp. 2795-2797 (1993).
1992
- P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole mobility enhancement in MOS-gated GexSi1-x/Si heterostructure inversion layers," IEEE Elec. Dev. Lett. EDL-13, pp. 56-59 (1992).
- J.C. Sturm and C.M. Reaves, "Silicon temperature measurement by infrared absorption: fundamental processes and doping effects," IEEE Trans. Elec. Dev. TED-39, pp. 81-88 (1992).
- X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, M.L.W. Thewalt, R.B. Gregory, P. Fejes, "Quantum confinement effects in strained silicon-germanium alloy quantum wells," Appl. Phys. Lett.60, pp. 2135-2137 (1992).
- X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, and M.L.W. Thewalt, "Photoluminescence from electron-hole plasmas confined in Si1-xGex quantum wells, "Appl. Phys. Lett. 60, pp. 1720-1722 (1992).
- Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3 mm electroluminescence from strained Si1-xGex quantum wells," Appl. Phys. Lett. 60, pp. 3177-3179 (1992).
- L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High efficiency photoluminescence from localized excitons in Si1-xGex," Appl. Phys. Lett. 60, pp. 3174-3176 (1992).
- K. Tokunaga and J.C. Sturm, "Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET's," IEEE Trans. Elec. Dev. TED-39, pp. 2413 (1992).
1991
- J.C. Sturm, P.M. Garone, and P.V. Schwartz, "Temperature control of silicon-germanium epitaxial growth on silicon substrates by infrared transmission," J. Appl. Phys. 69, pp. 542-544 (1991).
- E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base dopant outdiffusion and base-emitter spacers on the performance of Si/Si1-xGex/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 42-44 (1991).
- Z. Matutinovic-Krstelj, E.J. Prinz, and J.C. Sturm, "Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 163-165 (1991).
- P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole confinement in MOS-gated Gex/Si1-x/Si heterostructures," IEEE Elec. Dev. Lett. EDL-12, pp. 230-232 (1991).
- J.C. Sturm, E.J. Prinz, and C.W. Magee, "Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near ideal electrical characteristics," IEEE Elec. Dev. Lett. EDL-12, pp. 303-305 (1991).
- X. Xiao, J.C. Sturm, K.K. Goel, and P.V. Schwartz, "Fabry-Perot optical intensity modulator at 1.3 \(\mu\)m in Silicon," IEEE Photonics Tech. Lett. PTL-3, pp. 230-232 (1991).
- J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells," Phys. Rev. Lett. 66, pp. 1362-1365 (1991).
- J.C. Sturm, P.V. Schwartz, E.J. Prinz, and H. Manoharan, "Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors," J. Vac. Sci. Tech. B 9, pp. 2011-2016 (1991).
- K. Tokunaga and J.C. Sturm, "Substrate bias dependence of subthreshold slopes in fully-depleted silicon-on-insulator MOSFET's," IEEE Trans. Elec. Dev. TED-38, pp. 1803-1807 (1991).
- (Invited) J.C. Sturm, "Growth and applications of epitaxial Si1-xGex alloys grown by rapid thermal chemical vapor deposition," JOM (J. Metals) 43, No. 10, pp. 43-47 (1991).
- E.J. Prinz and J.C. Sturm, "Current gain-early voltage products in heterojunction bipolar transistors with non-uniform base bandgaps," IEEE Elec. Dev. Lett. EDL-12, pp. 661-663 (1991).
- V. Venkataraman, P.V. Schwartz, and J.C. Sturm, "Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 59, pp. 2871-2873 (1991).
1990
- J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Silicon temperature measurement by infrared transmission for rapid thermal processing applications," Appl. Phys. Lett. 56, pp. 961-964 (1990).
- P.M. Garone, J.C. Sturm, P.V. Schwartz, S.A. Schwarz, and B. Wilkens, "Silicon vapor-phase epitaxial growth catalysis by the presence of germane," Appl. Phys. Lett. 56, pp. 1275-1277 (1990).
- P.V. Schwartz and J.C. Sturm, "Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 57, pp. 2004-2006 (1990).
1989
- J.C. Sturm, E.J. Prinz, P.M. Garone, and P.V. Schwartz, "Bandgap shifts in silicon-germanium heterojunction bipolar transistors," Appl. Phys. Lett. 54, pp. 2707-2709 (1989).
- J.C. Sturm and K. Tokunaga, "Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors," Electronics Lett. 25, pp. 1233-1234 (1989).
1988
1987
1986
- J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: in-situ metal-oxide-semiconductor capacitors," IEEE Elec. Dev. Lett. EDL-7, pp. 282-284 (1986).
- C.M. Gronet, J.C. Sturm, K.E. Williams, J.F. Gibbons, and S.D. Wilson, "Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing," Appl. Phys. Lett. 48, pp. 1012-1014 (1986).
- J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Minority carrier properties of thin epitaxial silicon films fabricated by limited reaction processing," J. Appl. Phys. 59, pp. 4180-4182 (1986).
- J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors," IEEE Elec. Dev. Lett. EDL-7, pp. 577-579 (1986).
1985
- J.C. Sturm, J.D. Plummer, and J.F. Gibbons, "Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface," Appl. Phys. Lett. 46, pp. 1171-1173 (1985).
- J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors in laser-recrystallized polysilicon," IEEE Elec. Dev. Lett. EDL-6, pp. 400-402 (1985).
- C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, J.F. Gibbons, "A seeded channel silicon-on-insulator MOS technology," IEEE Elec. Dev. Lett. EDL-6, pp. 668-670 (1985).
1984
1982