Journal Papers

2023

  • C. Wu, Y. Ma, S. Venkatesh, Y. Mehlman, M. Ozatay, S. Wagner, J. C. Sturm, and N. Verma, “A Monolithically Integrable Reconfigurable Antenna Based on Large-Area Electronics,” IEEE J. of Solid-State Circuits (JSSC), Oct. 2023. 10.1109/JSSC.2023.3322905. View PDF | View Online

2022

  • Y. Ma, C. Wu, N. M. Fata, P. Kumar, S. Wagner, J. C. Sturm, and N. Verma, “Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics,” IEEE Open J. of the Solid-State Circuits Society (OJ-SSCS), vol. 2, pp. 177-192, Oct. 2022. View PDF | View Online
  • Y. Ma, C. Wu, Y. Mehlman, S. Wagner, N. Verma, and J. C. Sturm, “Material Aspects of Giga-Hertz ZnO TFTs for Wireless Systems,” MRS Advances, vol. 7, pp. 265-272, April 2022. View PDF | View Online

2021

  • C. Wu, Y. Mehlman, P. Kumar, T. Moy, J.C. Sturm, N. Verma, “A phased array based on largearea electronics that operates at gigahertz frequency,” Nature Electronics, 4, (10), pg. 747-766 (2021). DOI: 10.1038/s41928-021-00648-z
  • V. Kumar, B. Acot, L.E. Aygun, S. Wagner, N. Verma, J. Sturm, B. Glisic, “Detecting localizing and quantifying damage using two-dimensional sensing sheet: lab test and field application,” Journal of Civil Structural

2020

  • W. Liang, R.H. Austin, and J.C. Sturm, “Scaling of deterministic lateral displacement devices to a single column of bumping obstacles,” Lab on a Chip, 20, pp. 3461-3467 (2020). doi: 10.1039/d0lc00570c (featured by a figure on the back cover)
  • L.E. Aygun, V. Kumar, C. Weaver, M. Gerber, S. Wagner, B. Glisic, and J.C. Sturm, “Large-Area Resistive Strain Sensing Sheet for Structural Health Monitoring,” Sensors, 20, pp. 1386-1400 (2020). doi: 10.3390/s20051386
  • K-C Lin*, Y. Sun*, G. Torga, P. Sherpa, Y. Zhao, J. Qu, S. R. Amend, K.J. Pienta, J.C. Sturm and R.H. Austin, “An in vitro tumor swamp model of heterogeneous cellular and chemotherapeutic landscapes,” Lab on Chip, 20, pp. 2453–2464 (2020). doi: 10.1039/d0lc00131g
  • T.V. Phan, R. Morris, M.E. Black, T.K. Do, K.C. Lin, K. Nagy, J.C. Sturm, J. Bos, and R.H. Austin, “Bacterial Route Finding and Collective Escape in Mazes and Fractals,” Phys. Rev. X, 10, 031017 (2020).FORMAT ONLY: L. E. Aygun*, P. Kumar*, Z. Zheng*, T-S. Chen*, S. Wagner, J. C. Sturm , N. Verma, “Hybrid LAE-CMOS force-sensing system employing TFT-Based compressed sensing for scalability of tactile sensing skins, IEEE Trans. on Biomedical Circuits and Systems, 13 (6), 1264-1276 (2019). doi: 10.1109/TBCAS.2019.2948326

2019

  • L. E. Aygun et al., "Hybrid LAE-CMOS Force-Sensing System Employing TFT-Based Compressed Sensing for Scalability of Tactile Sensing Skins," in IEEE Transactions on Biomedical Circuits and Systems, vol. 13, no. 6, pp. 1264-1276, Dec. 2019, doi: 10.1109/TBCAS.2019.2948326. View PDF | View Online
  • Ke‐Chih Lin, Gonzalo Torga, Yusha Sun, Robert Axelrod, Kenneth J. Pienta, James C. Sturm, Robert H. Austin, "The role of heterogeneous environment and docetaxel gradient in the emergence of polyploid, mesenchymal and resistant prostate cancer cells," Clinical & Experimental Metastasis vol. 36, 97-108 (2019).  View PDF | View Online
  • K-C. Lin, G. Torga, Y. Sun, K. Pienta, J.C. Sturm, R.H. Ausin, “Generation of Heterogeneous Drug Gradients Across Cancer Populations on a Microfluidic Evolution Accelerator for Real-Time Observation,” J. Visualized Experiments, 151, e60185 (2019). doi: 10.3791/60185. View PDF | View Online
  • (Invited) J.C. Sturm, Y. Mehlman, L.E. Aygun, C. Wu, Z. Zheng, P. Kumar, S. Wagner, and N. Verma, “Machine learning and high-speed circuitry in thin film transistors for sensor interfacing in hybrid large-area electronic systems,” Electrochemical Society Trans., vol. 92, pp. 121-134 (2019). doi: 10.1149/09204.0121ecst View PDF | View Online

2018

  • Amy Wu, David Liao, Vlamimir Kirilin, Ke-Chih Lin, Gonzalo Torga, Junle Qu, Liyu Liu, James C. Sturm, Kenneth Pienta and Robert Austin, “Cancer dormancy and criticality from a game theory perspective,” Cancer Convergence 2:1, 1-8 (2018) View PDF
  • Roberto Campos-González, Alison M. Skelley, Khushroo Gandhi, David W. Inglis, James C. Sturm, Curt I. Civin, and Tony Ward, "Deterministic Lateral Displacement: The Next-Generation CAR T-Cell Processing?," SLAS Technology, Vol. 23(4) 338–351(2018) View PDF
  • M. Gerber, C. Weaver, L.E. Aygun, N. Verma, J.C. Sturm, and B.Glisic, "Strain transfer for optimal performance of sensing sheet," Sensors 18 (6), 1907 (2018)  View PDF
  • J. Jhaveri, A.H. Berg, and J. C. Sturm, "Isolation of hole versus electron current at p-Si/TiO2 selective contact using a heterojunction bipolar transistor structure," IEEE J. Photovoltaics 8 (30), 726-732 (2018) View PDF
  • Yasmin Afsar, Tiffany Moy, Nicholas Brady, Sigurd Wagner, James C. Sturm, and Naveen Verma, “An Architecture for Large-Area Sensor Acquisition Using Frequency-Hopping ZnO TFT DCOs,” IEEE Journal of Solid-State Circuits, vol. 53 (1), 297-308 (2018) View PDF

2017

  • Tiffany Moy, Liechao Huang, Warren Rieutort-Louis, Can Wu, Paul Cuff, Sigurd Wagner, James C. Sturm, and Naveen Verma, “An EEG Acquisition and Biomarker-Extraction System Using Low-Noise-Amplifier and Compressive-Sensing Circuits Based on Flexible, Thin-Film Electronics,” IEEE Journal of Solid-State Circuits, VOL. 52, NO. 1 (2017). View PDF
  • Alexander H. Berg, Ken A. Nagamatsu, and James C. Sturm, “Extraction of Front- and Rear-Interface Recombination in Silicon Double-Heterojunction Solar Cells by Reverse Bias Transients,” IEEE Transactions on Electron Devices, VOL. 64, NO. 11 (2017). View PDF
  • Ke-Chih Lin, Gonzalo Torga, Amy Wu, Joshua D Rabinowitz, Wesley J Murray, James C Sturm, Kenneth J Pienta and Robert Austin, “Epithelial and mesenchymal prostate cancer cell population dynamics on a complex drug landscape,” Converg. Sci. Phys. Oncol. 3 (2017) 045001. View PDF
  • Josue Sanz-Robinson, Tiffany Moy, Liechao Huang, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, “Large-Area Electronics: A Platform for Next-Generation Human-Computer Interfaces,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, VOL. 7, NO. 1 (2017). View PDF
  • Yu Chen, Robert H. Austin, and James C. Sturm, "On-chip cell labelling and washing by capture and release using microfluidic trap arrays," Biomicrofluidics, 11, 054107-1 (2017). View PDF

2016

  • Warren Rieutort-Louis, Tiffany Moy, Zhuo Wang, Sigurd Wagner, James C. Sturm, and Naveen Verma, “A Large-Area Image Sensing and Detection System Based on Embedded Thin-Film Classifiers,” IEEE Journal of Solid-State Circuits, VOL. 51, NO. 1 (2016). View PDF
  • Josue Sanz-Robinson, Liechao Huang, Tiffany Moy, Warren Rieutort-Louis, Yingzhe Hu, Sigurd Wagner, James C. Sturm, and Naveen Verma, “Large-Area Microphone Array for Audio Source Separation Based on a Hybrid Architecture Exploiting Thin-Film Electronics and CMOS,” IEEE Journal of Solid-State Circuits, VOL. 51, NO. 4 (2016). View PDF
  • Curt I. Civin, Tony Ward, Alison M. Skelley, Khushroo Gandhi, Zendra Peilun Lee, Christopher R. Dosier, Joseph L. D’Silva, Yu Chen, MinJung Kim, James Moynihan, Xiaochun Chen, Lee Aurich, Sergei Gulnik, George C. Brittain, Diether J. Recktenwald, Robert H. Austin, James C. Sturm, “Automated Leukocyte Processing by Microfluidic Deterministic Lateral Displacement,” Cytometry Part A, 89A: pp. 1073-1083 (2016). View PDF
  • Tiffany Moy, Warren Rieutort-Louis, Sigurd Wagner, James C. Sturm, and Naveen Verma, “A Thin-Film, Large-Area Sensing and Compression System for Image Detection,” IEEE Transactions on Circuits and Systems − I: Regular Papers, VOL. 63, NO. 11 (2016). View PDF
  • Gabriel Man, Jeffrey Schwartz, James C. Sturm, and Antoine Kahn, "Electronically Passivated Hole-Blocking Titanium Dioxide/ Silicon Heterojunction for Hybrid Silicon Photovoltaics," Adv. Mater. Interfaces 2016, 3, 1600026.  View PDF
  • Branko Gliˇsi ́c, Yao Yao, Shue-Ting E. Tung, Sigurd Wagner, James C. Sturm, and Naveen Verma, "Strain Sensing Sheets forStructural Health MonitoringBased on Large-Area Electronicsand Integrated Circuits," Proceedings of the IEEE, Vol. 104 (8), pp. 1513-1528 (2016). View PDF
  • Yasmin Afsar, Jenny Tang, Warren Rieutort-Louis, Liechao Huang, Yingzhe Hu, Josue Sanz-Robinson, Naveen Verma, Sigurd Wagner, and James C. Sturm, "Impact of bending on flexible metal oxide TFTs and oscillator circuits," Journal of the Society for Information Display 24/6, pp. 371-380 (2016). View PDF
  • T. Liu, L.E. Aygun, S. Wagner, and J.C. Sturm, "Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part I: Two-Stage Model for Lifetime Prediction," IEEE Transactions on Device and Materials Reliability," Vol. 16, pp. 243-254 (2016). View PDF
  • T. Liu, L.E. Aygun, S. Wagner, and J.C. Sturm, "Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence," IEEE Transactions on Device and Materials Reliability," Vol. 16, pp. 255-262 (2016). View PDF

2015

  • Girija Sahasrabudhe, Sara M. Rupich, Janam Jhaveri, Alexander H. Berg, Ken A. Nagamatsu, Gabriel Man, Yves J. Chabal, Antoine Kahn, Sigurd Wagner, James C. Sturm, and Jeffrey Schwartz, “Low-Temperature Synthesis of a TiO2/Si Heterojunction,” J. Am. Chem. Soc. 2015, 137, pp. 14842−14845. View PDF
  • A. Wu, Q.C. Zhang, G. Lambert, Z. Khin, R.A. Gatenby, H.J. Kim, N. Pourmand, K. Bussey, P.C.W. Davies, J.C. Sturm, R.H. Austin, "Ancient Hot and Cold Genes and Chemotherapy Resistance Emergence," Proceedings of the National Academy of Sciences of the United States of America, Vol. 112, pp. 10467-10472 (2015). View PDF
  • B. Visweswaran, P. Mandlik, S.H. Mohan, J.A. Silvernail, R. Ma, J.C. Sturm and S. Wagner, "Diffusion of water into permeation barrier layers", J. Vac. Sci. Technol. A33(3), 031513-1 (MAY/JUN 2015). View PDF
  • J. D'Silva, R.H. Austin and J.C. Sturm, "Inhibition of clot formation in deterministic lateral displacement arrays for processing large volumes of blood for rare cell capture", Lab Chip 2015, 10.1039/c4lc01409j (MAR 2015). View PDF
  • J.A. Spechler, K.A. Nagamatsu, J.C. Sturm, and C.B. Arnold, "Improved Efficiency of Hybrid Organic Photovoltaics by Pulsed Laser Sintering of Silver Nanowire Network Transparent Electrode", ACS Applied Materials & Interfaces, Vol. 7 (19), pp. 10556-19552 (2015). View PDF
  • K.A. Nagamatsu, S. Avasthi, G. Sahasrabudhe, G. Man, J. Jhaveri, A.H. Berg, J. Schwartz, A. Kahn, S. Wagner, and J.C. Sturm, "Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell", Appl. Phys. Lett. 106, 123906, (2015). View PDF
  • L. Huang, W. Rieutort-Louis, A. Gualdino, L. Teagno, Y. Hu, J. Mouro, J. Sanz-Robinson, J.C. Sturm, S. Wagner, V. Chu, J.P. Conde, and N. Verma, "A System Based on Capacitive Interfacing of CMOS with Post-processed Thin-film MEMS Resonators Employing Synchronous Readout for Parasitic Nulling", J. Solid-State Circuits (JSSC), 50 (4), pp. 1002-1015 (APR 2015). View PDF
  • N. Verma, Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz Robinson, T. Moy, B. Glisic, S. Wagner, J. Sturm, "Enabling Scalable Hybrid Systems: Architectures for Exploiting Large-Area Electronics in Applications," Proceedings of the IEEE, Vol. 103, No. 4 (APR 2015). View PDF
  • W. Rieutort-Louis, J. Sanz-Robinson, T. Moy, L.C. Huang, Y.Z. Hu, Y. Afsar, J.C. Sturm, N. Verma, S. Wagner, "Integrating and Interfacing Flexible Electronics in Hybrid Large-Area Systems", IEEE Trans. Components Packaging & Manufacturing Tech. Vol. 5, pp. 1219-1229 (2015). View PDF
  • Y. Chen, E.S. Abrams, T.C. Boles, J.N. Pedersen, H. Flyvbjerg, R.H. Austin, and J.C. Sturm, "Concentrating Genomic Length DNA in a Microfabricated Array", Phys. Rev. Lett. 114, 198303-5 (2015). View PDF
  • Y. Chen, J. D'Silva, R.H. Austin, and J.C. Sturm, "Microfluidic chemical processing with on-chip washing by deterministic lateral displacement arrays with separator walls", Biomicrofluidics 9 (5), pp. 054015-10 (2015) doi.org/10.1063/1.4930863. View PDF

2014

  • A. Wu, D. Liao, T. Tlsty, J.C. Sturm, R.H. Austin, "Game theory in the death galaxy: interaction of cancer and stromal cells in tumour microenvironment", Interface Focus 4, 20140028 (JUN 2014). View PDF
  • C.-T. Huang, J.-Y. Li, K.S. Chou, J.C. Sturm, "Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer", Appl. Phys. Lett 104, 24, 243510 (JUN 2014). View PDF
  • J. Sanz-Robinson, W. Rieutort-Louis, Y. Hu, L. Huang, N. Verma, S. Wagner, J.C. Sturm, "Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification", IEEE EDL, Vol 35, pp. 425-427 (APR 2014). View PDF
  • J.C. Sturm, E.C. Cox, B. Comella, R.H. Austin, "Ratchets in hydrodynamic flow: more than waterwheels", Interface Focus 4 (5), Article UNSP 20140054 DOI: 10.1098/rsfs.2014.0054 (DEC 2014). View PDF
  • K. Nagamatsu, S. Avasthi, J. Jhaveri, and J.C. Sturm, "A 12% Efficient Silicon/PEDOT:PSS Heterojunction Solar Cell Fabricated at < 100 C", J. Photovoltaics, Vol. 4, pp. 260-264 (JAN 2014). View PDF
  • Q.Z. Zhang, J. Bos, G. Tarnopolskiy, J.C. Sturm, H. Kim, N. Pourmand, R.H. Austin, "You cannot tell a book by looking at the cover: Cryptic complexity in bacterial evolution", Biomicrofluidics 8 (5) Article 052004, DOI: 10.1063/1.4894410 (SEPT 2014). View PDF
  • W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, and N. Verma, "A Complete Fully Thin-Film PV Harvesting and Power-Management System on Plastic With On-Sheet Battery Management and Wireless Power Delivery to Off-sheet Loads", J. Photovoltaics, Vol 4, pp. 432-439 (JAN 2014). View PDF
  • Y. Hu, L. Huang, W. Rieutort-Louis, J. Sanz-Robinson, J.C. Sturm, S. Wagner, N. Verma, "A Self-Powered System for Large-Scale Strain Sensing by Combining CMOS ICs with Large-Area Electronics", J. Solid-State Circuits, Vol 49, pp. 838-840 (APR 2014). View PDF
  • Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, L. Huang, B. Glisic, J.C. Sturm, S. Wagner, and N. Verma, "Large-Scale Sensing System Combining Large-Area Electronics and CMOS ICs for Structural-Health Monitoring", J. Solid-State Circuits, Vol 49, pp. 513-523 (FEB 2014). View PDF

2013

  • A. Wu, K. Loutherback, G. Lambert, L. Estevez-Salmeron, T.D. Tlsty, R.H. Austin, and J.C. Sturm, "Cell motility and drug gradients in the emergence of resistance to chemotherapy", PNAS 110, pp. 16103-16108 (2013). View PDF
  • C.-T. Huang, J.-Y. Li and J.C. Sturm, "Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K", IEEE Elec. Dev. Lett. EDL-34, pp. 21-23 (JAN 2013). View PDF
  • J.-Y Li, C.-T Huang, L.P. Rokhinson, and J.C. Sturm, "Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition," Appl. Phys. Lett. 103, 162105 (2013). View PDF
  • J.-Y. Li, and J.C. Sturm, "The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in p+-SiGe/n+-SiGe Junctions in Forward and Reverse Biases", IEEE T-ED 60, pp. 2479-2484 (2013) doi 10.1109/TED/2013.2267172. View PDF
  • L.-Y. Liu, G. Duclos, B. Sun, J. Lee, A. Wu, Y. Kam, E.D. Sontag, H.A. Stone, J.C. Sturm, R.A. Gatenby and R.H. Austin, "Minimization of thermodynamic costs in cancer cell invasion", PNAS, 110 (5), pp. 1686-1691 (JAN 2013). View PDF
  • N.T. Jafferis and J.C. Sturm, "Fundamental and Experimental Conditions for the Realization of Traveling-Wave-Induced Aerodynamic Propulsive Forces by Piezoelectrically Deformed Plastic Substrates", J. of Microelectromech. Syst. 22, (2), pp. 495-505 (APR 2013). View PDF
  • S. Avasthi, W. McClain, G. Man, A. Kahn, J. Schwartz, and J.C. Sturm, "Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics", App. Phys. Lett. 102, 203090 (2013) http://dx.doi.org/10.1063/1.4803446. View PDF

2012

  • N. Jafferis, J.C. Sturm, "Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions," J. Appl. Phys. 111, 064316 (2012). View PDF
  • C. Payette, K. Wang, P.J. Koppinen, Y. Dovzhenko, J.C. Sturm, J.R. Petta, "Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures," Appl. Phys. Lett. 100, 043508-1-3 (2012) View PDF
  • J.-Y. Li, C.-T. Huang, J.C. Sturm, "The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 101, 142112 (2012). View PDF
  • K. Loutherback, J. D'Silva, L. Liu, A. Wu, R.H. Austin, and J.C. Sturm, "Deterministic separation of cancer cells from blood at 10 mL/min," AIP Advances 2, 042107-1-7 (2012). View PDF

2011

  • L. Han, Y.F. Huang, J.C. Sturm, and S. Wagner, "Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film Transistors With a SiO2-Silicone Hybrid Gate Dielectric," IEEE Elect. Dev. Lett. EDL-32, pp. 36-38 JAN (2011). View PDF
  • S. Avasthi, Y.B. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces," Surface Science 605, pp. 1308-1312 JUL (2011). View PDF
  • Y. Huang, S. Wagner, J.C. Sturm, "Nonvolatile Amorphous-Silicon Thin-Film Transistor Structure for Drain-Voltage Independent Saturation Current," IEEE Trans. Elec. Dev. TED-58, pp. 2924-2927 (2011). View PDF
  • N.T. Jafferis, H.A. Stone, J.C. Sturm, "Traveling wave-induced aerodynamic propulsive forces using piezoelectrically deformed substrates," Appl. Phys. Lett. 99, 114102-3 (2011). View PDF
  • S. Avasthi, S. Lee, Y.-L. Loo, J.C. Sturm, "Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells," Advanced Materials 23, pp. 5762-5766 (2011) View PDF

2010

  • H. Jin and J.C. Sturm, "Super-high-resolution transfer printing for full-color OLED display patterning," J. Soc. Information Display, pp. 141-145 (2010). View PDF
  • E. Lausecker, Y. Huang, T. Fromherz, J.C. Sturm, S. Wagner, "Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication," Appl. Phys. Lett. 96, pp. 263501-3 (2010). View PDF
  • S. Avasthi, Y. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Silicon surface passivation by an organic overlayer of 9, 10-phenanthrenequinone," Appl. Phys. Lett. 96, pp. 222109-3 (2010). View PDF
  • L, Liu, K. Loutherback, D. Liao, D. Yeater, G. Lambert, G. Estevez-Torres, J.C. Sturm, R.H. Getzenberg, R.H. Austin, "A microfluidic device for continuous cancer cell culture and passage with hydrodynamic forces," Lab Chip 10, pp. 1807-1813 (2010). View PDF
  • K. Morton, O.K. Tsui, C.K. Tung, J.C. Sturm, S.Y. Chou, R. Austin, "The anti-louts leaf effect in nanohydrodynamic bump arrays," New J. Phys. 12, pp. 085008-14 (2010). View PDF
  • K. Loutherback, K.S. Chou, J. Newman, J. Puchalla, R.H. Austin, and J.C. Sturm, "Improved Performance of Deterministic Lateral Displacement Arrays with Triangular Posts," Microfluidics and Nanofluidics 9, pp. 1143-1149 (2010). View PDF
  • K.H. Cherenack, B. Hekmatshoar, J.C. Sturm, and S. Wagner, "Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 C," IEEE Trans. Elec. Dev. TED-57, pp. 2381-2389 (2010). View PDF
  • Y. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory," J. Soc. Info. Display 18, pp. 879-883 (2010). View PDF

2009

  • K.H. Cherenack, A.Z. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, "Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 °C," J. Korean Phys. Soc. 54, pp. 415-420 (2009). View PDF
  • K. Loutherback, J. Puchalla, R.H. Austin, J.C. Sturm, "Deterministic Microfluidic Ratchet," Phys. Rev. Lett. 102, pp. 045301-4 (2009). View PDF
  • B. Hekmatshoar, S. Wagner and J.C. Sturm, "Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework," Appl. Phys. Lett. 95, pp. 143504-3 (2009). View PDF

2008

  • D.W. Inglis, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin, J.C. Sturm, "Determining blood cell size using microfluidic hydrodynamics," J. Immuno. Methods 329, pp. 151-156 (2008). View PDF
  • B. Hekmatshoar, A.Z. Kattamis, K.H. Cherenack, S. Wagner, and J.C. Sturm, "A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels", J. Soc. Inf. Display 16, pp. 183-188, (2008). View PDF
  • B. Hekmatshoar, A.Z. Kattamis, K.H. Cheranack, K. Long, J.Z. Chen, S. wagner, J.C. Sturm, K. Raman, M. Hack, "Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic," IEEE Elec. Dev. Lett. EDL- 29, pp. 63-66 (2008). View PDF
  • D.W. Inglis, K.J. Morton, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin and J.C. Sturm, "Microfluidic device for label-free measurement of platelet activation," Lab Chip 8, pp. 925-931 (2008). View PDF
  • K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S.Y. Chou, and R.H. Austin, "Hydrodynamic metamaterials: Microfabricated arrays to steer, refract, and focus streams of biomaterials," Proc. Nat. Acad. Sci. 105, pp. 7434-7438 (2008). View PDF
  • K.H. Chung, N. Yao, J. Benziger, J.C. Sturm, K.K. Singh, D. Carlson, and S. Kuppurao, "Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane," Appl. Phys. Lett. 92, pp. 113506-3 (2008). View PDF
  • B. Hekmatshoar, K.H. Cherenack, A.Z. Kattamis, K. Long, S. Wagner, J.C. Sturm, "Highly stable amorphous-silicon thin-film transistors on clear plastic," Appl. Phys. Lett. 93, pp. 032103-3 (2008). View PDF
  • Y.F. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Top-gate amorphous silicon TFT with self-aligned silicide source/drain and high mobility," IEEE Elec. Dev. Lett. EDL-29, pp. 737-739 (2008). View PDF
  • K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S. Y. Chou and R. H. Austin, "Crossing Microfluidic Streamlines to Lyse, Label and Wash Cells" Lab Chip 8, pp. 1448-1453 (2008). View PDF

2007

  • K.H. Chung, J.C. Sturm, E. Sanchez, K.K. Singh, S. Kuppurao, "The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neoplentasilane," Semiconductor Science and Technology 22, pp. 158-516 (2007). View PDF
  • A. Kattamis, K.H.Cherenack, B. Hekmatshoar, L.C. Cheng, H. Gleskova, J.C. Sturm, and S. Wagner, "Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability," IEEE ELectron Dev. Lett, vol 28, 606-608 (20007) View PDF
  • W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker, J.T. Mayer, "The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications," Semiconductor Science and Technology 22, pp. 188-190 (2007). View PDF
  • K. Long, I.C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J.C. Sturm, "Amorphous-silicon thin-film transistors made at 280 oC on clear-plastic substrates by interfacial stress engineering," J. Soc. Info. Display 15, pp 167-176 (2007). View PDF
  • A.Z. Kattamis, I.-C. Cheng, K. Long, B. Hekmatshoar, K.H. Cherenack, S. Wagner, J.C. Sturm, S.M. Venugopal, D.E. Loy, S.M. O'Rourke, and D.R. Allee, "Amorphous Silicon Thin-Film Transistor Backplanes Depositied at 200C on Clear Plastic for Lamination to Electrophoretic Displays," J. Display Technology 3, pp. 304-309, (2007). View PDF
  • K.H. Cherenack, A.Z. Kattamis, B.Hekmatshoar, J.C. Sturm, and S. Wagner, "Amorphous-Silicon Thin-Film Transistors Fabricated at 300C on a Free-Standing Foil Substrate of Clear Plastic," IEEE Elec. Dev. Lett. EDL-28, pp. 1004-1006 (2007). View PDF

2006

  • D.W. Inglis, J.A. Davis, R.H. Austin, J.C. Sturm, "Critical particle size for fractionation by deterministic lateral displacement," Lab Chip 6, pp. 655-658 (2006). View PDF
  • I.C. Cheng, A.Z. Kattamis, K. Long, J.C. Sturm, S. Wagner, "Self-aligned amorphous-silicon TFTs on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 166-168 (2006). View PDF
  • K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner. J.C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 oC to 280 oC," IEEE Elec. Dev. Lett. EDL-27, pp. 111-113 (2006). View PDF
  • A.Z. Kattamis, R.J. Holmes, I.-C. Cheng, K. Long, J.C. Sturm, S.R. Forrest, S. Wagner, "High mobility nanocrystalline silicon transistors on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 49-51 (2006). View PDF
  • R.L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, and J.C. Sturm, "Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates," J. Appl. Phys. 100, pp. 023537 (2006). View PDF
  • R.L. Peterson, K.D. Hobart, H. Yin, F.J. Kub, and J.C. Sturm, "Reduced Buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate," J. Appl. Phys. 88, pp. 021913 (2006). View PDF
  • R.L. Peterson, K.D. Hobart, F.J. Kub, and J.C. Sturm, "Comment on Fabrication of strained silicon on insulator by strain transfer process", Appl. Phys. Lett. 88, pp. 146101 (2006). View PDF
  • K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J.C. Sturm, M. Stevenson, G. Yu, and M. O’Regan, “Active Matrix Amorphous-Silicon TFT Arrays at 180 oC on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays,” IEEE Trans. Elec. Dev. TED-53, pp. 1789-1796, (2006). View PDF
  • X.-Z. Bo, L.P. Rokhinson, N. Yao, D.C. Tsui and J.C. Sturm, "SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth," J. of Appl. Phys. 100, pp. 094317 (2006). View PDF
  • J.A. Davis, D.W. Inglis, K.J. Morton, D.A. Lawrence, L.R. Huang, S. Y. Chou, J.C. Sturm, and R.H. Austin, "Deterministic hydrodynamics: Taking blood apart," Proc. Nat. Acad. Sci. 103, pp. 14779 - 14784, (2006). View PDF
  • R. Riehn, R.H. Austin, and J.C. Sturm, "A Nanofluidic Railroad Switch for DNA," Nano Letters 6, pp. 1973-1976 (2006). View PDF
  • K. Long, F. Pschenitzka, M.-H. Lu, and J.C. Sturm, “Full-Color OLEDs Integrated by Dry Dye Printing,” IEEE Trans. Elec. Dev. TED-53, pp. 2250-2258 (2006). View PDF
  • H. Gleskova, I-C. Cheng, S. Wagner, J.C. Sturm, Z.Suo,“Mechanics of thin-film electronics on flexible substrates,” Solar Energy 80, pp. 687-693 (2006). View PDF
  • J.C. Sturm, P.-I. Hsu, H. Gleskova, R. Bhattacharya, and S. Wagner, “Deformable Electronic Surfaces,” International Journal of High Speed Electronics and Systems 16, pp. 365-374 (2006). View PDF
  • O. Bakajin, E. Fountain, K. Morton, S.Y. Chou, J.C. Sturm, R.H. Austin, "Materials aspects in micro-and nanofluidic systems applied to biology," MRS Bulletin 31, pp. 108-113 (2006). View PDF

2005

  • H. Yin, K.D. Hobart, R.L. Peterson, F.J. Kub, J.C. Sturm, "Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance," IEEE Trans. Elec. Dev. TED-52, pp. 2207-2214, (2005). View PDF
  • H. Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Tunable uniaxial vs. biaxial in-plane strain using compliant substrates," Appl. Phys. Lett. 87, pp. 061922 - 3 (2005). View PDF
  • T. Graves-Abe and J. C. Sturm, "Programmable organic thin-film devices with extremely high current densities," Appl. Phys. Lett. 87, pp. 133502-3 (2005). View PDF
  • I.-C. Cheng, A. Kattamis, K. Long, J.C. Sturm, and S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, pp. 563 (2005). View PDF
  • Y.M. Wang, J.O. Tegenfeldt, J. Sturm, R.H. Austin “Long-range interactions between transcription factors” Nanotechnology 16, pp. 1993-1999 (2005). View PDF
  • Y.M. Wang , J.O. Tegenfeldt, W. Reisner, R. Riehn, X.J. Guan , L.I. Guo, I. Golding, E.C. Cox , J.C. Sturm, R.H. Austin, “Single-molecule studies of repressor-DNA interactions show long-range interactions” Proc. Nat. Acad. Sci. USA 28, pp. 9796-9801 (2005). View PDF
  • E.J. Stewart, M.S. Carroll, J.C. Sturm, “Boron segregation in single-crystal Si1-x-yGexCy and Si1-yCy alloys,” J. Electrochem. Soc. 152, pp. 500-505 (2005). View PDF
  • W. Reisner, K.J. Morton, R. Riehn, Y.M. Wang, Z.N. Yu, M. Rosen, J.C. Sturm, S.Y. Chou, E. Frey, R.H. Austin, “Statics and dynamics of single DNA molecules confined in nanochannels,” Phys. Rev. Lett. 94, pp. 196101 (2005). View PDF

2004

  • H. Gleskova, P.-I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, S. Wagner, "Field-effect mobility of amorphous silicon thin-film transistors under strain," Non-Crystalline Solids 338, pp. 732-735 (2004). View PDF
  • L.R. Huang, E.C. Cox, R.H. Austin, J.C. Sturm, "Continuous particle separation through deterministic lateral displacement," Science 304, pp. 987-990 (2004). View PDF
  • H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation," Appl. Phys. Lett. 84, pp. 3624-3626 (2004). View PDF
  • E.J. Stewart, M.S. Carrol, J.C. Sturm, "Boron segregation and electrical properties in polycrystalline Si1-x-yGexCy and Si1-yCy alloys," J. Appl. Phys. 95, pp. 4029-4035 (2004). View PDF
  • J.O. Tegenfeldt, C. Prinz, H. Cao, R.L. Huang, R.H. Austin, S.Y. Chou E.C. Cox, J.C. Sturm, "Micro- and nanofluidics for DNA analysis," Analytical and Bioanalyical Chem. 378, pp. 1678-1692 (2004). View PDF
  • P.-I. Hsu, M. Huang, H. Gleskova, Z. Xi, Z. Suo, S. Wagner and J.C. Sturm, "Effects of mechanical strain on TFTs on spherical domes," IEEE Trans. Elec. Dev. TED-51, pp.371-377 (2004). View PDF
  • E.J. Stewart, J.C. Sturm, "Segregation of boron to polycrystalline and single-crystal Si1-x-yGexCy and Si1-yCy layers," App. Surface Science 224, pp.87-90 (2004). View PDF
  • P.-I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, J.C. Sturm, "Spherical deformation of compliant substrates with semiconductor device islands," J. Appl. Phys. 95, pp.705-712 (2004). View PDF
  • J. Tegenfeldt, C. Prinz, H. Cao, S. Chou, W. Reisner, R. Riehn, Y.M. Wang, E. Cox, J.C. Sturm, P. Silberzan, R.H. Austin, "The dynamics of genomic-length DNA molecules in nm channels," Proc. Nat. Acad. Sci. 101, pp. 10979-10983, (2004). View PDF
  • S. Wagner, S.P. Lacour, J. Jones, P.-I. Hsu, J.C. Sturm, T. Li, Z. Suo, "Electronic Skin: architecture and components," Physica E 25, pp. 326-344, (2004). View PDF
  • T. Graves-Abe, F. Pschenitzka, H. Z. Jin, B. Bollman, J. C. Sturm and R. A. Register, "Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application," J. Appl. Phys. 95, pp. 7154-7163 (2004). View PDF
  • T. Graves-Abe, Z. Bao, and J.C. Sturm, "Self-aligned, insulating-layer structure for integrated fabrication of organic self-assembled multilayer electronic devices," Nano Letters 4, pp. 2489-2492 (2004). View PDF
  • D.W. Inglis, R. Riehn, R.H. Austin, J.C. Sturm, "Continuous Microfluidic Immunomagnetic Cell Separation," Appl. Phys. Lett. 85, pp. 593-595 (2004). View PDF

2003

  • H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates," Appl. Phys. Lett. 82, pp. 3853-3855 (2003). View PDF
  • H. Yin, R. Huang, K.D. Hobart, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Buckling suppression of SiGe islands on compliant substrates," J. App. Phys. 94, pp. 6875 (2003). View PDF
  • L.R. Huang; E.C. Cox, R.H. Austin, J.C. Sturm, "Tilted Brownian Ratchet for DNA Analysis," Anal. Chem. 75, pp. 6963-6967 (2003). View PDF
  • W.L. Li, J.O. Tegenfeldt L. Chen, R.H. Austin, S.Y. Chou, P.A. Kohl, J. Krotine, J.C. Sturm, "Sacrificial polymers for nanofluidic channels in biological applications," Nanotechnology 14, pp. 578-583 (2003). View PDF

2002

  • M.H. Lu and J.C. Sturm, "Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment," J. Appl. Phys. 91, pp. 595-604 (2002). View PDF
  • H. Yin, R. Huang, K.D. Hobart, Z. Suo, T.S. Kuan, C.K. Inoki, S.R. Shieh, T.S. Duffy, F.J. Kub, J.C. Sturm, "Strain relaxation of SiGe islands on compliant oxide," J. Appl. Phys. 91, pp. 9716-9722 (2002). View PDF
  • X. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, T.R. Hebner, J.C. Sturm, "Effect of carbazole-oxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes," J. Appl. Phys. 91, pp. 6717-6724 (2002). View PDF
  • X.Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide," J. Appl. Phys. 91, pp. 2910-2915 (2002). View PDF
  • X.Z. Bo, N. Yao, S. Wagner, and J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002). View PDF
  • J. Liang, R. Huang, H. Yin, J.C. Sturm, K.D. Hobart, and Z. Suo, "Relaxation of compressed elastic islands on a viscous layer," Acta Materialia 50, pp. 2933-2944 (2002). View PDF
  • P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002). View PDF
  • L.R. Huang, P. Silberzan, J.O. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, and H. Craighead, "Role of molecular size in ratchet fractionation," Phys. Rev. Let. 89, pp. 178301 (2002). View PDF
  • R.H. Austin, N. Darnton, R. Huang, J.C. Sturm, O. Bakajin, and T. Duke, "Ratchets: the problem with boundary conditions in insulating fluids," Appl. Phys. A 75, pp. 279-284 (2002). View PDF
  • L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R. H. Austin, and E. C. Cox, "A DNA prism for high-speed continuous fractionation of large DNA molecules," Nature Biotechnology, 20, pp. 1048-1051 (2002). View PDF
  • X.Z. Bo, L.P. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation," Appl. Phys. Lett. 81, pp. 3263-3265 (2002). View PDF
  • M. Wu, X.Z. Bo, J.C. Sturm, S. Wagner, "Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates," IEEE Trans. Elec. Dev. TED-49, pp. 1993-2000 (2002). View PDF
  • C.Prinz, J.O. Tegenfeldt, R.H. Austin, E.C. Cox, J.C. Sturm, "Bacterial chromosome extraction and isolation," Lab Chip, 2, pp. 207-212 (2002). View PDF
  • M.S. Carroll and J.C. Sturm, "The quantification of substitutional carbon loss from Si0.998 C0.002 due to silicon self-interstitial injection during oxidation," Appl. Phys. Lett. 81, pp. 1225-1227 (2002). View PDF
  • P.I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, and J.C. Sturm, "Amorphous Si TFTs on plastically-deformed spherical domes," 19th Int. Conf. On Amorphous & Microcrystalline Semiconductors, J. Non-Crystalline Solids. 299-302 pp. 1355-1359 (2002). View PDF
  • D. De Salvador, A. Coati, E. Napolitani, M. Berti, A.V.Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, L. Lazzarini. "Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection," Appl. Phys. A 75, pp. 667-672 (2002). View PDF
  • E. Napolitani, D. De Salvador, A. Coati, M. Berti, A.V. Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, C. Spinella. "Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation," Nuclear Instruments and Methods in Physics Research B 186, pp. 212-217 (2002). View PDF
  • X.Z. Bo, N. Yao, S. Wagner, J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002). View PDF
  • S. Wagner, E. Bonderover, W. Jordan, J.C. Sturm, "Electrotextiles: Concepts and challenges," Int. J. of High Speed Electronics and Systems. 12, pp. 391-399 (2002). View PDF

2001

  • K. Pangal, J.C. Sturm, and S. Wagner, "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer on the same substrate," IEEE Trans. Electron Dev. TED-48, pp. 707-714 (2001). View PDF
  • F. Pschenitzka and J.C. Sturm, "Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes," Appl. Phys. Lett. 78, pp. 2584-2586 (2001). View PDF
  • M.H. Lu, J.C. Sturm "External coupling efficiency in planar organic light-emitting devices," Appl. Phys. Lett. 78, pp. 1927-1929 (2001). View PDF
  • M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Diffusion enhanced carbon loss from SiGeC layers due to oxidation," Phys. Rev. B 64, pp. 073308-4 (2001). View PDF
  • M.S. Carroll, J.C. Sturm, and T. Buyuklimanli, "Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation," Phys. Rev. B 64, pp. 085316-7 (2001). View PDF
  • N. Darnton, O. Bakajin, R. Huang, B. North, O.J. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, "Hydrodynamics in 2-1/2 dimensions: making jets in a plane," J Phys. Condens. Mat. 13, pp. 4891-4902 (2001). View PDF
  • Y.A. Vlasov, X.Z. Bo, J.C. Sturm, D.J. Norris, "On-chip natural assembly of silicon photonic bandgap crystals," Nature 414, pp. 289-293 (2001). View PDF
  • F. Pschenitzka, and J.C. Sturm. "Excitation mechanisms in dye-doped organic light-emitting devices," Appl. Phys. Lett. 79, pp. 4354-4356 (2001). View PDF
  • E. Stewart and J.C. Sturm, "Suppression of boron penetration in p-channel MOSFETs using polycrystalline SiGeC gate layers," IEEE Elec. Dev. Lett. EDL-22, pp. 574-576 (2001). View PDF

2000

  • C. Madigan, M.H. Lu, and J.C. Sturm, "Improvement of output coupling efficiency of organic light-emitting diodes by substrate modification," Appl. Phys. Lett. 76, pp. 1650-1652 (2000). View PDF
  • M.S. Carroll, J.C. Sturm, and M. Yang, "Low-temperature preparation of oxygen-and carbon-free silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 4652-4659 (2000). View PDF
  • X.Z. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, and J.C. Sturm, "Statistical copolymers with side-chain hole and electron transport groups for single-layer electroluminescent device applications," Chem. Mater. 12, pp. 2542-2549 (2000). View PDF
  • M. Yang, M. Carroll, J.C. Sturm, and T. Buyuklimanli, "Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 3541-3545 (2000). View PDF
  • K. Pangal, J.C. Sturm, S. Wagner, and N. Yao, "Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization," IEEE Trans. Electron Dev. TED-47, pp. 1599-1607 (2000). View PDF
  • S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, "Low-and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: effect of phonon confinement in germanium quantum wells," Phys. Rev. B 61, pp. 16807-16818 (2000). View PDF

1999

  • M. Yang, C.L. Chang, M. Carroll, and J.C. Sturm, "25nm p-channel vertical MOSFET's with SiGeC source-drains," IEEE Elec. Dev. Lett. EDL-20, pp. 301-303 (1999). View PDF
  • K. Pangal, J.C. Sturm, S. Wagner, and T.H. Büyüklimanli, "Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films," J. Appl. Phys. 85, pp. 1900-1906 (1999). View PDF
  • C.W. Liu, M.Y. Chem, C.L. Chang and J.C. Sturm, "Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition," J. Appl. Phys. 85, pp. 2124-2128 (1999). View PDF
  • F. Pschenitzka and J.C. Sturm, "Three-color organic light-emitting diodes patterned by masked dye diffusion," Appl. Phys. Lett. 74, pp. 1913-1915 (1999). View PDF
  • C.L. Chang and J.C. Sturm, "Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal - oxide - semiconductor structures," Appl. Phys. Lett. 74, pp. 2501-2503 (1999). View PDF
  • K. Pangal, J.C. Sturm, and S. Wagner, "Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon," Appl. Phys. Lett. 75, pp. 2091-2093 (1999). View PDF
  • M. Wu, K. Pangal, J.C. Sturm, and S. Wagner, "High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates," Appl. Phys. Lett. 75, pp. 2244-2246 (1999). View PDF

1998

  • M.S. Carroll, C.L. Chang, and J.C. Sturm "Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation," Appl. Phys. Lett. 73, pp. 3695-3697 (1998). View PDF
  • T.R. Hebner, C.C. Wu, D. Marcy, M.H. Lu, and J.C. Sturm, "Ink-jet printing of doped polymers for organic light emitting devices," Appl. Phys. Lett. 72, pp. 519-521 (1998). View PDF
  • (Invited) J.C. Sturm, "Advanced column-IV epitaxial materials for silicon-based optoelectronics," Bull. Mat. Res. Soc. pp. 60-64 (April 1998). View PDF
  • T.R. Hebner and J.C. Sturm, "Local tuning of organic light-emitting diode color by dye droplet application," Appl. Phys. Lett. 73, pp. 1775-1777 (1998). View PDF
  • (Invited) J.C. Sturm, W. Wilson, and M. Iodice, "Thermal effects and scaling in organic light-emitting flat-panel displays," IEEE J. of Selected Topics in Quantum Electronics 4, pp. 75-82 (1998). View PDF
  • C.L. Chang, L.P. Rokhinson, J.C. Sturm, "Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p- Si (100) by heterojunction internal photoemission," Appl. Phys. Lett. 73, pp. 3568-3570 (1998). View PDF

1997

  • C.C. Wu, J.C. Sturm, R.A. Register, J. Tian, E.P. Dona, and M.E. Thompson, "Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar transport abilities," IEEE Trans. Elec. Dev. TED-44, pp. 1269-1281 (1997). View PDF
  • C.W. Liu and J.C. Sturm, "Low-temperature CVD growth of \(\beta\)-SiC on (100) Si using methylsilane and device characteristics," J. Appl. Phys. 82, pp. 4558-4565 (1997). View PDF
  • M. Yang, J. C. Sturm, and J. Prevost, "Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures," Phys. Rev. B 56, pp. 1973-1980 (1997). View PDF
  • C.C. Wu, C.I. Wu, J.C. Sturm, and A. Kahn, "Surface modification of indium tin oxide by plasma treatment: an effective method to improve the efficiency, brightness and reliability of organic light emitting devices," Appl. Phys. Lett. 70, pp. 1348-1350 (1997). View PDF
  • R.A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, and J.C. Sturm, "Co silicide formation on SiGeC/Si and SiGe/Si layers," Appl. Phys. Lett. 70, pp. 1266-1268 (1997). View PDF
  • L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation," Appl. Phys. Lett. 70, pp. 3125-3126 (1997). View PDF
  • C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Integration of organic LEDs and amorphous Si TFT's onto flexible and lightweight metal foil substrates," IEEE Elec. Dev. Lett. EDL-18, pp. 609-611 (1997). View PDF
  • (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si1-x-yGexCy thin films and devices," Thin Solid Films 294, pp. 112-117 (1997). View PDF
  • C.L. Chang, A. St. Amour, and J.C. Sturm, "The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions," Appl. Phys. Lett. 70, pp. 1557-1559 (1997). View PDF

1996

  • Z. Matutinovic-Krstelj, V. Venkataraman, E.J. Prinz, J.C. Sturm, and C.W. Magee, "Base resistance and effective bandgap reduction in npn Si/Si1-xGex/Si HBT's with heavy base doping," IEEE Trans. Elec. Dev. TED-43, pp. 457-466 (1996). View PDF
  • L.D. Lanzerotti, A. St. Amour, C.W. Liu, J.C. Sturm, J.K. Watanabe, and N.D. Theodore, " Si/Si1-x-yGexCy/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-71, pp. 334-337 (1996). View PDF
  • K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Nonivasive measurement of charging in plasmas using microelectromechanical charge sensing devices," Appl. Phys. Lett. 69, pp. 1471-1473 (1996). View PDF
  • C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, J.L.W. Thewalt, C.W. Magee, and D. Eaglesham, "Growth and photoluminescence of high quality SiGeC random alloys of silicon substrates," J. Appl. Phys. 80, pp. 3043-3047 (1996). View PDF
  • C.C. Wu, J.C. Sturm, and R.A. Register, "Integrated three-color organic light-emitting devices," Appl. Phys. Lett. 69, pp. 3117-3119 (1996). View PDF

1995

  • Z. Matutinovic-Krstelj, E. Chason, and J.C. Sturm, "Growth pressure effects on Si/Si1-xGe chemical vapor deposition," J. Elec. Mat. 24, pp. 725-730 (1995). View PDF
  • C.C. Wu, J.K.M. Chun, P.E. Burrows, J.C. Sturm, M.E. Thompson, S.R. Forrest, and R.A. Register, "Poly(P-phenylene vinylene)/tris (8-hydroxy)quinoline aluminum heterostructure light emitting diode," Appl. Phys. Lett. 66, pp. 653-655 (1995). View PDF
  • J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Electroluminescent properties of self-assembled polymer thin films," Advanced Materials 7, pp. 395-398 (1995). View PDF
  • J.R. Jimenez, X. Xiao, J.C. Sturm, and P.W. Pellegrini, "Tunable long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors," Appl. Phys. Lett. 67, pp. 506-608 (1995). View PDF
  • J.C. Sturm, I.-W. Wu, and M. Hack, "Leakage current modeling of series-connected thin film transistors," IEEE Trans. Elec. Dev. TED-42, pp. 1561-1563 (1995). View PDF
  • C.W. Cullen and J.C. Sturm, "Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission," IEEE Trans. Semicond. Manufact. 8, pp. 346-351 (1995). View PDF
  • (Invited) A. St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of photoluminescence in strained-Si1-xGex/Si heterostructures," J. Materials Science: Materials in Electronics 6, pp. 350-355 (1995). View PDF
  • A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence and bandgap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si(100)," Appl. Phys. Lett. 67, pp. 3915 (1995). View PDF
  • A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Erratum: "Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)," [Appl. Phys. Lett. 67, 3915 (1995)]" Appl. Phys. Lett. 68, p. 1169 (1996). View PDF
  • J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, and R.A. Register, "Photophysical properties, self-assembled thin films and light-emitting diodes of poly(p-pyridylvinylene)'s and poly(p-pyridinium vinylene)'s," Chemistry of Materials 7, pp. 2190-2198 (1995). View PDF

1994

  • J.C. Sturm, A. St. Amour, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "High temperature (77 - 300K) photo- and electro-luminescence in Si1-xGex heterostructures," Jap. J. Appl. Phys. 33, pp. 2329-2334 (1994). View PDF
  • J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Pt and Ir silicides on SiGe for infrared detectors," J. Appl. Phys. 75, pp. 5160-5164 (1994). View PDF
  • P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," J. Electrochem. Soc. 141, pp. 1284-1290 (1994). View PDF
  • V. Higgs, E.C. Lightowlers, X. Xiao, and J.C. Sturm, "Characterization of Si/Si1-xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy," Appl. Phys. Lett. 64, pp. 607-609 (1994). View PDF
  • J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Deep photoluminescence in Si/Si1-xGex/Si quantum wells created by ion implantation and annealing," Appl. Phys. Lett. 64, pp. 2291-2293 (1994). View PDF
  • C.W. Liu, J.C. Sturm, Y. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and bandgap of strained <110> Si1-xGex layers on silicon substrates by chemical vapor deposition," Appl. Phys. Lett. 65, pp. 76-78 (1994). View PDF
  • A. St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation," Appl. Phys. Lett. 65, pp. 3344-3346 (1994). View PDF
  • Y.M. Liu, X. Xiao, J.C. Sturm, and P.R. Prucnal, "All optical switching in an asymmetric silicon Fabry-Perot etalon based on the free-carrier plasma effect," Applied Optics 33, pp. 3871-3874 (1994). View PDF

1993

  • L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High quantum efficiency photoluminescence spectroscopy of localized excitons in Si1-xGex" J. Elec. Mat. 22, pp. 223 (1993). View PDF
  • Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Symmetric Si/Si1-xGex electron resonant tunneling diodes with an anomalous temperature behavior," Appl. Phys. Lett. 62, pp. 603-605 (1993). View PDF
  • L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, and X. Xiao, "Photoluminescence study of vertical transport in Si1-xGex/Si heterostructures," Phys. Rev. 47, pp. 16,659-16,662 (1993). View PDF
  • L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence mechanisms in thin Si1-xGex quantum wells," Phys. Rev. B 47, pp. 16,655-16,658 (1993). View PDF
  • P.V. Schwartz, C.W. Liu, and J.C. Sturm, "Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition," Appl. Phys. Lett. 62, pp. 1103-1105 (1993). View PDF
  • X. Xiao, J.C. Sturm, S.J. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Silicide/strained Si1-xGex schottky-barrier infrared detectors," IEEE Elec. Dev. Lett. EDL-14, pp. 199-201 (1993). View PDF
  • V. Venkataraman, C.W. Liu, and J.C. Sturm, "Alloy-scattering limited transport of two-dimensional carriers in strained Si1-xGex quantum wells," Appl. Phys. Lett. 63, pp. 2795-2797 (1993). View PDF

1992

  • P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole mobility enhancement in MOS-gated GexSi1-x/Si heterostructure inversion layers," IEEE Elec. Dev. Lett. EDL-13, pp. 56-59 (1992). View PDF
  • J.C. Sturm and C.M. Reaves, "Silicon temperature measurement by infrared absorption: fundamental processes and doping effects," IEEE Trans. Elec. Dev. TED-39, pp. 81-88 (1992). View PDF
  • X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, M.L.W. Thewalt, R.B. Gregory, P. Fejes, "Quantum confinement effects in strained silicon-germanium alloy quantum wells," Appl. Phys. Lett.60, pp. 2135-2137 (1992). View PDF
  • X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, and M.L.W. Thewalt, "Photoluminescence from electron-hole plasmas confined in Si1-xGex quantum wells, "Appl. Phys. Lett. 60, pp. 1720-1722 (1992). View PDF
  • Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3 mm electroluminescence from strained Si1-xGex quantum wells," Appl. Phys. Lett. 60, pp. 3177-3179 (1992). View PDF
  • L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High efficiency photoluminescence from localized excitons in Si1-xGex," Appl. Phys. Lett. 60, pp. 3174-3176 (1992). View PDF
  • K. Tokunaga and J.C. Sturm, "Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET's," IEEE Trans. Elec. Dev. TED-39, pp. 2413 (1992). View PDF

1991

  • J.C. Sturm, P.M. Garone, and P.V. Schwartz, "Temperature control of silicon-germanium epitaxial growth on silicon substrates by infrared transmission," J. Appl. Phys. 69, pp. 542-544 (1991). View PDF
  • E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base dopant outdiffusion and base-emitter spacers on the performance of Si/Si1-xGex/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 42-44 (1991). View PDF
  • Z. Matutinovic-Krstelj, E.J. Prinz, and J.C. Sturm, "Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 163-165 (1991). View PDF
  • P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole confinement in MOS-gated Gex/Si1-x/Si heterostructures," IEEE Elec. Dev. Lett. EDL-12, pp. 230-232 (1991). View PDF
  • J.C. Sturm, E.J. Prinz, and C.W. Magee, "Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near ideal electrical characteristics," IEEE Elec. Dev. Lett. EDL-12, pp. 303-305 (1991). View PDF
  • X. Xiao, J.C. Sturm, K.K. Goel, and P.V. Schwartz, "Fabry-Perot optical intensity modulator at 1.3 \(\mu\)m in Silicon," IEEE Photonics Tech. Lett. PTL-3, pp. 230-232 (1991). View PDF
  • J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells," Phys. Rev. Lett. 66, pp. 1362-1365 (1991). View PDF
  • J.C. Sturm, P.V. Schwartz, E.J. Prinz, and H. Manoharan, "Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors," J. Vac. Sci. Tech. B 9, pp. 2011-2016 (1991). View PDF
  • K. Tokunaga and J.C. Sturm, "Substrate bias dependence of subthreshold slopes in fully-depleted silicon-on-insulator MOSFET's," IEEE Trans. Elec. Dev. TED-38, pp. 1803-1807 (1991). View PDF
  • (Invited) J.C. Sturm, "Growth and applications of epitaxial Si1-xGex alloys grown by rapid thermal chemical vapor deposition," JOM (J. Metals) 43, No. 10, pp. 43-47 (1991). View PDF
  • E.J. Prinz and J.C. Sturm, "Current gain-early voltage products in heterojunction bipolar transistors with non-uniform base bandgaps," IEEE Elec. Dev. Lett. EDL-12, pp. 661-663 (1991). View PDF
  • V. Venkataraman, P.V. Schwartz, and J.C. Sturm, "Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 59, pp. 2871-2873 (1991). View PDF

1990

  • J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Silicon temperature measurement by infrared transmission for rapid thermal processing applications," Appl. Phys. Lett. 56, pp. 961-964 (1990). View PDF
  • P.M. Garone, J.C. Sturm, P.V. Schwartz, S.A. Schwarz, and B. Wilkens, "Silicon vapor-phase epitaxial growth catalysis by the presence of germane," Appl. Phys. Lett. 56, pp. 1275-1277 (1990). View PDF
  • P.V. Schwartz and J.C. Sturm, "Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 57, pp. 2004-2006 (1990). View PDF

1989

  • J.C. Sturm, E.J. Prinz, P.M. Garone, and P.V. Schwartz, "Bandgap shifts in silicon-germanium heterojunction bipolar transistors," Appl. Phys. Lett. 54, pp. 2707-2709 (1989). View PDF
  • J.C. Sturm and K. Tokunaga, "Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors," Electronics Lett. 25, pp. 1233-1234 (1989). View PDF

1988

  • J.C. Sturm, K. Tokunaga, and J.-P. Colinge, "Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors," IEEE Elec. Dev. Lett. EDL-9, pp. 460-463 (1988). View PDF

1987

  • J.C. Sturm, J.P. McVittie, J.F. Gibbons, and L. Pfeiffer, "A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact," IEEE Elec. Dev. Lett. EDL-8, pp. 104-106 (1987). View PDF

1986

  • J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: in-situ metal-oxide-semiconductor capacitors," IEEE Elec. Dev. Lett. EDL-7, pp. 282-284 (1986). View PDF
  • C.M. Gronet, J.C. Sturm, K.E. Williams, J.F. Gibbons, and S.D. Wilson, "Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing," Appl. Phys. Lett. 48, pp. 1012-1014 (1986). View PDF
  • J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Minority carrier properties of thin epitaxial silicon films fabricated by limited reaction processing," J. Appl. Phys. 59, pp. 4180-4182 (1986). View PDF
  • J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors," IEEE Elec. Dev. Lett. EDL-7, pp. 577-579 (1986). View PDF

1985

  • J.C. Sturm, J.D. Plummer, and J.F. Gibbons, "Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface," Appl. Phys. Lett. 46, pp. 1171-1173 (1985). View PDF
  • J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors in laser-recrystallized polysilicon," IEEE Elec. Dev. Lett. EDL-6, pp. 400-402 (1985). View PDF
  • C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, J.F. Gibbons, "A seeded channel silicon-on-insulator MOS technology," IEEE Elec. Dev. Lett. EDL-6, pp. 668-670 (1985). View PDF

1984

  • J.C. Sturm, M.D. Giles, and J.F. Gibbons, "A three-dimensional folded dynamic RAM in beam-recrystallized polysilicon," IEEE Elec. Dev. Lett. EDL-5, pp. 151-153 (1984). View PDF

1982

  • T.J. Stultz, J.C. Sturm, J.F. Gibbons, and S.K. Ichiki, "Rapid annealing of silicon with a scanning cw Hg lamp," J. Appl. Phys. 53, pp. 7109-7111 (1982). View PDF