Contributed Chapters and Volumes Edited


Contributed Chapters

  • J.C. Sturm, "Si/Si1-xGex/Si heterojunction bipolar transistors," Chap. 7.1 in Properties of Strained and Relaxed Silicon-Germanium, EMIS Datareviews No. 12,  E. Kasper, ed., pp. 193-204 (EMIS/IEE, United Kingdom, 1995)
  • S. Wagner, H. Gleskova, J.C. Sturm, and Z. Suo, "Novel Process Technology for Macroelectronics," in Technology and Applications of Hydrogentated Amorphous Silicon, R.A. Street, ed., pp. 222-251 (Springer, Berlin, 2000)
  • J.C. Sturm and H. Yin, "Si/SiGe/Si Heterojunction Bipolar Transistors," Chap. 7.1 in Properties of Strained and Relaxed Silicon-Germanium, EMIS Datareviews No. 24, E. Kasper and K. Lyutovich, ed's., pp. 305-318 (INSPEC, IEE, London, U.K., 2000)
  • M. Yang, C.-L. Chang, and J.C. Sturm, "Band Alignments and Bandgaps in Siy1-x-yGexCy /Si (001) Structures," Chap. 1 in Silicon-Germanium-Carbon Alloys: Growth, Properties, Devices, S. Pantelides and S. Zollner, ed's., pp. 1-18  (Taylor & Francis, CRC Press, 2002)
  • Sigurd Wagner, Helena Gleskova, I-Chun Cheng, James C. Sturm, and Z. Suo, "Mechanics of TFT technology on flexible substrates," Chap. 14 in Flexible Flat Panel Displays, G. P. Crawford, ed., pp. 263-283, 2005 (John Wiley & Sons, West Sussex, England, 2005)
  • J.C. Sturm, K. Rim, J.S. Harris, C.-C. Wu, “Electronic Materials," Chap. 6 in Guide to State-of-the-art Electron Devices, Joachim N. Burghartz, ed. (John Wiley and Sons, Chichester, England, 2013)

Volumes Edited

  • J.C. Sturm, C.K. Chen, L. Pfeiffer, and P.L.F. Hemet, ed's., Silicon-on-Insulator and Buried Metals in Semiconductors, Mat. Res. Soc. Symp. Proc. 107 (Materials Research Society, Pittsburgh, 1988)
  • S.R.J. Brueck, J.C. Gelpey, A. Kermani, J.L. Regolini, and J.C. Sturm, ed's., Rapid Thermal and Integrated Processing IV, Mat. Res. Soc. Symp. Proc. 387 (Materials Research Society, Pittsburgh, 1995)
  • W.G. En, E.C. Jones, J.C. Sturm, M. J. Chan, S. Tiwari, M. Hirose, ed's., Materials Issues in Novel Si-Based Technology, Mat. Res. Soc. Symp. Proc. 686, (2001)
  • J. Murota, B. Tillack, M. Caymax, J. Sturm, Y. Yasuda, and S. Zaima, ed's., Proc. of the First International SiGe Technology and Device Meeting (ISTDM 2003), Applied Surface Science vol. 224 (2004)
  • Seiiichi Miyazaki, J.C. Sturm, et al, ed's., Proc. of the 8th Inter. Conf. on Silicon Epitaxy and Heterostrutures (ICSI-8) and the 6th Inter. Symp on Control of Semiconductor Interfaces (ISCSI-VI), Thin Solid Films vol. 557, pp. 1-393 (2014)